Abstract: Methods for fabricating integrated circuits are provided. In one example, a method includes providing a circuit structure layer over a substrate and at least one etch layer over the circuit structure layer, in the at least one etch layer patterning at least one primary pattern feature having at least one primary pattern feature dimension and at least one assist pattern feature having at least one assist pattern feature dimension, where the primary pattern feature dimension is greater than the assist pattern feature dimension, reducing the at least one primary pattern feature dimension and closing the assist pattern feature to form an etch pattern, and etching a circuit structure feature using the etch pattern.

Abstract: At least one method, apparatus and system disclosed involves providing a functional cell for a circuit layout for an integrated circuit device. A determination as to a first location for a two-dimensional portion of a first power rail in a functional cell is made. A first portion of the first power rail is formed in a first direction. A second portion of the first power rail is formed in a second direction in the first location for the two-dimensional portion.

Abstract: Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contacts for local connections and methods of manufacture. The structure includes: at least one contact electrically shorted to a gate structure and a source/drain contact and located below a first wiring layer; and gate, source and drain contacts extending from selected gate structures and electrically connecting to the first wiring layer.

Abstract: One aspect of the disclosure is directed to a method of forming an integrated circuit structure. The method may include: providing a set of fins over a semiconductor substrate, the set of fins including a plurality of working fins and a plurality of dummy fins, the plurality of dummy fins including a first subset of dummy fins within a pre-defined distance from any of the plurality of working fins, and a second subset of dummy fins beyond the pre-defined distance from any of the plurality of working fins; removing the first subset of dummy fins by an extreme ultraviolet (EUV) lithography technique; and removing at least a portion of the second subset of dummy fins.

Abstract: The disclosure relates to integrated circuit (IC) structures with substantially T-shaped wires, and methods of forming the same. An IC structure according to the present disclosure can include a first substantially T-shaped wire including a first portion extending in a first direction, and a second portion extending in a second direction substantially perpendicular to the first direction; an insulator laterally abutting the first substantially T-shaped wire at an end of the first portion, opposite the second portion; and a pair of gates each extending in the first direction and laterally abutting opposing sidewalls of the insulator and the first portion of the substantially T-shaped wire.

Abstract: At least one method, apparatus and system disclosed involves providing a functional cell for a circuit layout for an integrated circuit device. A determination as to a first location for a two-dimensional portion of a first power rail in a functional cell is made. A first portion of the first power rail is formed in a first direction. A second portion of the first power rail is formed in a second direction in the first location for the two-dimensional portion.

Abstract: Methods for fabricating integrated circuits are provided. In one example, a method includes providing a circuit structure layer over a substrate and at least one etch layer over the circuit structure layer, in the at least one etch layer patterning at least one primary pattern feature having at least one primary pattern feature dimension and at least one assist pattern feature having at least one assist pattern feature dimension, where the primary pattern feature dimension is greater than the assist pattern feature dimension, reducing the at least one primary pattern feature dimension and closing the assist pattern feature to form an etch pattern, and etching a circuit structure feature using the etch pattern.

Abstract: An optical fiber sensor can be used to measure pressure with high sensitivity and fine resolution. As a cavity at the end of the sensor expands or contracts, the spectrum of a beam reflected from the end of fiber shifts, producing a change linked to pressure exerted on the sensor. Novel aspects of the present inventive sensor include the direct bonding of a silica thin film diaphragm to the optical fiber with localized or confined heating and a uniform thickness of the diaphragm. The resulting sensor has a diameter that matches the diameter of the optical fiber. Because the sensor is all silica, it does not suffer from temperature-induced error. In addition, the sensor can be very sensitive because the diaphragm can be very thin; it can also make highly repeatable measurements due to its very uniform thickness.

Abstract: A method of forming a pattern for interconnect lines in an integrated circuit includes providing a structure having a first lithographic stack, a mandrel layer and a pattern layer disposed over a dielectric stack. Patterning the structure to form mandrels in the mandrel layer and disposing a spacer layer over the mandrels. Etching the spacer layer to form spacers disposed on sidewalls of the mandrels. The spacers and mandrels defining beta and gamma regions. A beta region includes a beta block mask portion and a gamma region includes a gamma block mask portion of the pattern layer. The method also includes etching a beta pillar over the beta block mask portion and etching a gamma pillar over the gamma block mask portion. The method also includes etching the structure to form a pattern in the pattern layer, the pattern including the gamma and beta block mask portions.

Abstract: Process of using a dummy gate as an interconnection and a method of manufacturing the same are disclosed. Embodiments include forming on a semiconductor substrate dummy gate structures at cell boundaries, each dummy gate structure including a set of sidewall spacers and a cap disposed between the sidewall spacers; removing a first sidewall spacer or at least a portion of a first cap on a first side of a first dummy gate structure and forming a first gate contact trench over the first dummy gate structure; and filling the first gate contact trench with a metal to form a first gate contact.

Abstract: A method of optical proximity correction (OPC) in extreme ultraviolet lithography (EUV) lithography includes providing a patterned layout design including first and second design polygons that correspond with the pre-pattern opening, wherein the first and second design polygons are separated by a separation distance, and correcting the patterned layout design using OPC by generating (1) a third polygon that has dimensions corresponding to a combination of the first and second design polygons and the separation distance and (2) and filled polygon within the third polygon, thereby generating an OPC-corrected patterned layout design. EUV photomasks may be manufactured from the OPC-corrected patterned layout design, and integrated circuits may be fabricated using such EUV photomasks.

Abstract: Process of using a dummy gate as an interconnection and a method of manufacturing the same are disclosed. Embodiments include forming on a semiconductor substrate dummy gate structures at cell boundaries, each dummy gate structure including a set of sidewall spacers and a cap disposed between the sidewall spacers; removing a first sidewall spacer or at least a portion of a first cap on a first side of a first dummy gate structure and forming a first gate contact trench over the first dummy gate structure; and filling the first gate contact trench with a metal to form a first gate contact.

Abstract: An optical fiber sensor (100) can be used to measure pressure with high sensitivity and fine resolution. As a (108) at the end of the sensor expands or contracts, the spectrum of a beam reflected from the end of fiber shifts, producing a change linked to pressure exerted on the sensor. Novel aspects of the present inventive sensor include the direct bonding of a silica thin film diaphragm (110) to the optical fiber with localized or confined heating and a uniform thickness of the diaphragm. The resulting sensor has a diameter that matches the diameter of the optical fiber. Because the sensor is all silica, it does not from temperature-induced error. In addition, the sensor can be very sensitive because the diaphragm can be very thin; it can also make highly repeatable measurements due to its very uniform thickness.

Abstract: Process of using a dummy gate as an interconnection and a method of manufacturing the same are disclosed. Embodiments include forming on a semiconductor substrate dummy gate structures at cell boundaries, each dummy gate structure including a set of sidewall spacers and a cap disposed between the sidewall spacers; removing a first sidewall spacer or at least a portion of a first cap on a first side of a first dummy gate structure and forming a first gate contact trench over the first dummy gate structure; and filling the first gate contact trench with a metal to form a first gate contact.

Abstract: A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided.

Abstract: A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided.

Abstract: A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided.

Abstract: A method for producing self-aligned vias (SAV) is provided. Embodiments include forming a ILOS layer over a dielectric layer; forming pairs of spacers over the ILOS layer, each pair of spacers having a first filler formed between adjacent spacers, and a second filler formed between each pair of spacers; forming and patterning a first OPL to expose one second filler, spacers on opposite sides of the one second filler, and a portion of the first filler adjacent each of the exposed spacers; removing the one second filler to form a SAV, and SAV etching into the ILOS layer; forming a second OPL over the first OPL and in the SAV to form a SAV plug; removing OPL layers and etching into the ILOS layer down to the dielectric layer; forming a third OPL layer in spaces between the TEOS layer; and removing the SAV plug.

Abstract: Methods of forming a SAV using a selective SAQP or SADP process are provided. Embodiments include providing on a TiN layer and dielectric layers alternating mandrels and non-mandrel fillers, spacers therebetween, and a metal cut plug through a mandrel or a non-mandrel filler; removing a non-mandrel filler through a SAV patterning stack having an opening over the non-mandrel filler and adjacent spacers, forming a trench; removing a mandrel through a second SAV patterning stack having an opening over the mandrel and adjacent spacers, forming a second trench; etching the trenches through the TiN and dielectric layers; forming plugs in the trenches; removing the mandrels and non-mandrel fillers, forming third trenches; etching the third trenches through the TiN layer; removing the metal cut plug and spacers and etching the third trenches into the dielectric layer; removing the plugs; and filling the trenches with metal.