Abstract: One illustrative device disclosed herein includes, among other things, a semiconductor substrate, a fin structure, a gate structure positioned around a portion of the fin structure in the channel region of the device, spaced-apart portions of a second semiconductor material positioned vertically between the fin structure and the substrate, wherein the second semiconductor material is a different semiconductor material than that of the fin, and a local channel isolation material positioned laterally between the spaced-apart portions of the second semiconductor material and vertically below the fin structure and the gate structure, wherein the local channel isolation material is positioned under at least a portion of the channel region of the device.

Abstract: A method of optical proximity correction (OPC) in extreme ultraviolet lithography (EUV) lithography includes providing a patterned layout design including first and second design polygons that correspond with the pre-pattern opening, wherein the first and second design polygons are separated by a separation distance, and correcting the patterned layout design using OPC by generating (1) a third polygon that has dimensions corresponding to a combination of the first and second design polygons and the separation distance and (2) and filled polygon within the third polygon, thereby generating an OPC-corrected patterned layout design. EUV photomasks may be manufactured from the OPC-corrected patterned layout design, and integrated circuits may be fabricated using such EUV photomasks.

Abstract: A methodology for forming contact areas by a multiple patterning process that provides increased yield and lower risk of contact-to-contact short at points of tight tip-to-tip spacing and the resulting device are disclosed. Embodiments include forming one or more trench patterning layers on a planarized surface of a wafer, forming one or more trenches in the one or more trench patterning layers, forming a block mask at one or more points along the one or more trenches, extending the one or more trenches down to a substrate level of the wafer, and removing the block mask from the one or more points.

Abstract: One method disclosed includes performing a selective etching process through a gate cavity to selectively remove a portion of a first semiconductor material relative to a second layer of a second semiconductor material and a substrate so as to thereby define a space between the second semiconducting material and the substrate, filling substantially all of the space with an insulating material so as to thereby define a substantially self-aligned channel isolation region positioned under at least what will become the channel region of the FinFET device.

Abstract: A methodology for forming contact areas by a multiple patterning process that provides increased yield and lower risk of contact-to-contact short at points of tight tip-to-tip spacing and the resulting device are disclosed. Embodiments include forming one or more trench patterning layers on a planarized surface of a wafer, forming one or more trenches in the one or more trench patterning layers, forming a block mask at one or more points along the one or more trenches, extending the one or more trenches down to a substrate level of the wafer, and removing the block mask from the one or more points.

Abstract: One method disclosed includes performing a selective etching process through a gate cavity to selectively remove a portion of a first semiconductor material relative to a second layer of a second semiconductor material and a substrate so as to thereby define a space between the second semiconducting material and the substrate, filling substantially all of the space with an insulating material so as to thereby define a substantially self-aligned channel isolation region positioned under at least what will become the channel region of the FinFET device.

Abstract: A method of forming an improved EUV mask and pellicle with airflow between the area enclosed by the mask and pellicle and the area outside the mask and pellicle and the resulting device are disclosed. Embodiments include forming a frame around a patterned area on an EUV mask; forming a membrane over the frame; and forming holes in the frame.

Abstract: One method disclosed includes performing a selective etching process through a gate cavity to selectively remove a portion of a first semiconductor material relative to a second layer of a second semiconductor material and a substrate so as to thereby define a space between the second semiconducting material and the substrate, filling substantially all of the space with an insulating material so as to thereby define a substantially self-aligned channel isolation region positioned under at least what will become the channel region of the FinFET device.

Abstract: A method of forming an improved EUV mask and pellicle with airflow between the area enclosed by the mask and pellicle and the area outside the mask and pellicle and the resulting device are disclosed. Embodiments include forming a frame around a patterned area on an EUV mask; forming a membrane over the frame; and forming holes in the frame.

Abstract: One method disclosed includes performing a selective etching process through a gate cavity to selectively remove a portion of a first semiconductor material relative to a second layer of a second semiconductor material and a substrate so as to thereby define a space between the second semiconducting material and the substrate, filling substantially all of the space with an insulating material so as to thereby define a substantially self-aligned channel isolation region positioned under at least what will become the channel region of the FinFET device.

Abstract: A methodology for forming contact areas by a multiple patterning process that provides increased yield and lower risk of contact-to-contact short at points of tight tip-to-tip spacing and the resulting device are disclosed. Embodiments include forming one or more trench patterning layers on a planarized surface of a wafer, forming one or more trenches in the one or more trench patterning layers, forming a block mask at one or more points along the one or more trenches, extending the one or more trenches down to a substrate level of the wafer, and removing the block mask from the one or more points.

Abstract: An automated cell injection system and method are described, which can perform automatic, reliable, and high-throughput cell injection of foreign genetic materials, proteins, and other compounds. The system and method overcome the problems inherent in traditional manual injection that is characterized by poor reproducibility, human fatigue, and low throughput. The present invention is particularly suited for zebrafish embryo injection but can be readily extended to other biological injection applications such as mouse embryo, drosophila embryo, and C. elegans injections, capable of facilitating high-throughput genetic research at both academic and industry levels. A novel vacuum based cell-holding device is also provided.

Abstract: A system and method for micromanipulating samples are described to perform automatic, reliable, and high-throughput sample microinjection of foreign genetic materials, proteins, and other molecules, as well as drawing genetic materials, proteins, and other molecules from the sample. The system and method overcome the problems inherent in traditional manual micromanipulation that is characterized by poor reproducibility, human fatigue, and low throughput. The present invention is particularly suited for adherent cell microinjection but can be readily extended to aspiration, isolation, and electrophysiological measurements of microorganisms, unicellular organisms, or cells.

Abstract: An optical fiber sensor (100) can be used to measure pressure with high sensitivity and fine resolution. As a (108) at the end of the sensor expands or contracts, the spectrum of a beam reflected from the end of fiber shifts, producing a change linked to pressure exerted on the sensor. Novel aspects of the present inventive sensor include the direct bonding of a silica thin film diaphragm (110) to the optical fiber with localized or confined heating and a uniform thickness of the diaphragm. The resulting sensor has a diameter that matches the diameter of the optical fiber. Because the sensor is all silica, it does not from temperature-induced error. In addition, the sensor can be very sensitive because the diaphragm can be very thin; it can also make highly repeatable measurements due to its very uniform thickness.

Abstract: A method for fabricating a sensor, a sensor so fabricated, and a method for sensing a stimulus are provided. The method includes providing an elongated open channel, such as, a V-groove, in a substrate, the open channel providing a first surface; removing at least some material from at least a portion of the open channel to provide a second surface displaced from the first surface; positioning a diaphragm on the second surface; and positioning an elongated wave-guide having a beveled end in the elongated open channel wherein the beveled end is positioned over the diaphragm to define an interferometric cavity between the diaphragm and the outer surface of the wave-guide. The sensor so fabricated can provide an effective sensor for detecting acoustic emission waves, among other pressure waves.

Abstract: A system and method for micromanipulating samples are described to perform automatic, reliable, and high-throughput sample microinjection of foreign genetic materials, proteins, and other molecules, as well as drawing genetic materials, proteins, and other molecules from the sample. The system and method overcome the problems inherent in traditional manual micromanipulation that is characterized by poor reproducibility, human fatigue, and low throughput. The present invention is particularly suited for adherent cell microinjection but can be readily extended to aspiration, isolation, and electrophysiological measurements of microorganisms, unicellular organisms, or cells.

Abstract: A software project management method uses templates from one project phase as inputs to their subsequent project phases. The project is organized in four phases, each phase having one or more steps and one or more attributes. Using XSL, a phase model is transformed into a starting point as input for the subsequent phase model. XSL-FO is used to generate PDF documents from any phase model to export a particular project deliverable. The information and data created within that phase still has meaning as input for the next phase. A model thus derived can be reused for another project as well as to transform into a model used by a subsequent phase within the same project.

Abstract: The present invention discloses a materials-processing system, which comprises an inputting subsystem, a processing apparatus coupled to the inputting subsystem and a collecting subsystem coupled to the processing apparatus. The inputting subsystem comprises three or more sample vessels, which can be connected to the processing apparatus. Since the processing system includes multiple sample vessels, which can be grouped into different groups so that each group contains two or more of the multiple sample vessels. High throughput materials transport can be realized by sequentially connecting different groups of sample vessels to the processing apparatus, thereby overcoming a limitation of the prior art that cannot continuously perform multiple batches of materials processing and improving material processing efficiency.

Abstract: A method for fabricating a sensor, a sensor so fabricated, and a method for sensing a stimulus are provided. The method includes providing an elongated open channel, such as, a V-groove, in a substrate, the open channel providing a first surface; removing at least some material from at least a portion of the open channel to provide a second surface displaced from the first surface; positioning a diaphragm on the second surface; and positioning an elongated wave-guide having a beveled end in the elongated open channel wherein the beveled end is positioned over the diaphragm to define an interferometric cavity between the diaphragm and the outer surface of the wave-guide. The sensor so fabricated can provide an effective sensor for detecting acoustic emission waves, among other pressure waves.

Abstract: The present invention discloses an apparatus for processing materials, which is used to process the materials introduced thereinto, comprising a working part and a driving part, wherein the working part comprises, in cylindrical form, a first element and a second element arranged within the first element, and a containing chamber for storing materials to be processed being formed by the gap between the first element and the second element, and the second element is driven by the driving part to rotate relatively to the first element, and on the surface of the second element toward the containing chamber, provided is a disturbing part capable of producing axial forces in a direction parallel to the axis of the first element.