Abstract: The present invention provides a substrate processing system, a control method for a substrate processing apparatus, and a program for the system and/or method, each of which is intended to achieve effective control for a film-forming amount on processed substrates. The substrate processing system includes a substrate processing unit adapted for forming a film on each of the plurality of substrates; a pattern obtaining unit adapted for obtaining information about an arrangement pattern concerning arrangement of unprocessed substrates and processed substrates among the plurality of substrates; and a memory unit adapted for storing therein an arrangement/film-forming-amount model indicative of influence exerted on the film-forming amount on the substrates by the arrangement of the unprocessed substrates and processed substrates among the plurality of substrates.

Abstract: A heat processing apparatus comprises: a reaction vessel; a heating unit disposed in the reaction vessel and configured to heat the processing region; a temperature detection part configured to detect a temperature of the processing region; and a control part configured to control the heating unit by a PID control.

Abstract: The present invention provides a heating system, a heating method and a program, which can readily control processing temperature. A temperature calculating computer 4 of the heating system includes a device DB 42. The device DB 42 stores therein a temperature correcting table indicative of a relationship between an accumulated film thickness of extraneous matter attached to the interior of each heating apparatus and a temperature correcting amount, with respect to each heating apparatus, for each temperature (processing temperature) in the heating apparatus. Thus, the temperature correcting amount can be specified based on the temperature correcting table, the processing temperature and the accumulated film thickness, so that an optimized value can be calculated from the specified temperature correcting amount.

Abstract: A information processing apparatus 100 for processing an acquired value, which is a value acquired in regard to a state during a treatment, performed by a semiconductor manufacturing apparatus 200 for performing a treatment on a treatment target containing a semiconductor according to a set value, which is a value for setting a condition of a treatment, includes: a set value receiving portion 101 for receiving the set value; a state value receiving portion 102 for receiving the acquired value; a correction amount calculating portion 103 for calculating a correction amount of the acquired value, using a correction function indicating a relationship between the set value and the acquired value; a correcting portion 104 for correcting the acquired value received by the state value receiving portion 102, using the correction amount calculated by the correction amount calculating portion 103; and an output portion 105 for outputting a result of correction performed by the correcting portion 104.

Abstract: The thermal processing apparatus of the present invention includes: a processing container for containing an object to be processed; a plurality of heaters for heating the object to be processed; a plurality of temperature sensors for respectively detecting temperatures at a plurality of predetermined positions in the processing container; a storing part that stores: a thermal model for forecasting a temperature of the object to be processed contained in the processing container from outputs of the plurality of temperature sensors, and a recipe in which a desired temperature of the object to be processed is defined; and a controlling part that forecasts a temperature of the object to be processed by using the outputs of the plurality of temperature sensors and the thermal model, and that controls the plurality of heaters so as to cause the forecasted temperature of the object to be processed to coincide with the desired temperature of the object to be processed defined in the recipe.

Abstract: The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding set temperature profiles. The invention includes a first heat processing step of controlling respective substrate temperatures of a plurality of groups in accordance with respective predetermined provisional set temperature profiles for first-batch substrates that are classified into the plurality of groups, and of introducing a process gas to conduct a heat process to form films on the substrates; a first film-thickness measuring step of measuring a thickness of the films formed on the substrates; and a first set-temperature-profile amending step of respectively amending the provisional set temperature profiles based on the measured thickness, in such a manner that a thickness of films formed during a heat process is substantially the same between the plurality of groups.

Abstract: The present invention relates to a thermal processing method including thermal processing steps having: a step of holding a plurality of substrates by means of a substrate holder, a step of conveying the substrate holder into a reaction container, a step of heating a plurality of zones of thermal process atmosphere in the reaction container by means of a plurality of heating units, respectively, and a step of forming thin films on surfaces of the plurality of substrates by introducing a process gas into the reaction container.

Abstract: A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

Abstract: Temperature control is made without the risk of contaminating object-to-be-processed and with high accuracy. Temperatures are metered out of contact with the objects-to-be-processed, and based on a metered result, estimated temperatures of the objects-to-be-processed are computed. Furthermore, estimation errors of the estimated temperatures are computed to correct the estimated temperatures. Based on a temperature recipe stating relationships between set temperatures and times and the corrected estimated temperatures, a heater is controlled.

Abstract: The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality of substrates that are classified into the plurality of groups.

Abstract: A heat treatment apparatus for making a heat treatment while estimating temperatures of objects-to-be-processed that can estimate correct temperatures of the objects-to-be-processed. A reaction tube includes heaters and temperature sensors, and receives a wafer boat. A controller estimates temperatures of wafers and temperatures of the temperature sensors in zones in the reaction tube corresponding to the heaters by using the temperature sensors and electric powers of the heaters. Based on relationships between estimated temperatures of the temperature sensors and really metered temperatures, functions expressing the relationships between the estimated temperatures and the really metered temperatures are given for the respective zones. The functions are substituted by the estimated wafer temperatures to correct the estimated wafer temperatures.

Abstract: The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality of substrates that are classified into the plurality of groups.

Abstract: There is provided a batch type heat treatment system, control method and heat treatment method capable of appropriately coping with a multi-product small-lot production. A reaction tube 2 comprises a plurality of heaters 31 through 35 and a plurality of temperature sensors, and houses therein a wafer boat 23. A control part 100 stores therein many mathematical models for estimating (calculating) the temperature of wafers W in the reaction tube 2, in accordance with the number and arranged position of the wafers W mounted on the wafer boat 23, and many target temperature trajectories. If the wafer boat 23 is loaded in the reaction tube 2, a mathematical model and a target temperature trajectory corresponding to the number and arranged position of the mounted wafers W are read.

Abstract: A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

Abstract: A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

Abstract: The invention is a method of determining a set temperature profile for a method of controlling respective substrate temperatures of a plurality of groups in accordance with respective corresponding set temperature profiles, in a method of heat processing a plurality of substrates that are classified into the plurality of groups.

Abstract: This invention is a method of determining set temperature trajectories for a heat treatment system that conducts a first heat treatment process and a second heat treatment process to an object to be processed. The method comprises the steps of: conducting the first heat treatment process to a first test object to be processed, by using a temporary first set temperature trajectory; measuring a result of the first heat treatment process produced on the first test object to be processed; and determining a first set temperature trajectory for the first heat treatment process by correcting the temporary first set temperature trajectory on the basis of the measured result of the first heat treatment process.

Abstract: A plurality of wafers W are mounted on a wafer boat 11 in a reaction tube 1 having a double-tube structure as shelves, and zones 6a, 6b and 6c in the reaction tube 1 are heated to a first process temperature, e.g., 770° C., by heating parts 4a, 4b and 4c of a heater 4, respectively. Then, while the temperature in each of the zones 6a, 6b and 6c is lowered to a second process temperature, e.g., 750° C., which is lower than the first process temperature, a deposition gas is fed to deposit a thin film. If a step of raising the temperature in each of the zones 6a, 6b and 6c and a step of feeding the deposition gas while lowering the temperature of each of the zones 6a, 6b and 6c are repeatedly carried out, a deposition process is carried out while the temperature of the peripheral edge portion of each of the wafers W is lower than the temperature of the central portion of the wafer W. Thus the uniformity of the thickness of the film deposited on each of the wafers is improved.

Abstract: Temperature control is made without the risk of contaminating object-to-be-processed and with high accuracy. Temperatures are metered out of contact with the objects-to-be-processed, and based on a metered result, estimated temperatures of the objects-to-be-processed are computed. Furthermore, estimation errors of the estimated temperatures are computed to correct the estimated temperatures. Based on a temperature recipe stating relationships between set temperatures and times and the corrected estimated temperatures, a heater is controlled.

Abstract: A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.