Abstract: An apparatus for filling capsules comprises a conveyor wheel, on the circumference of which a plurality of capsule holders is provided a conveyor wheel drive that alternately passes through stopping times and movement times, so that the capsule holders move along the conveying path in cycles, and a plurality of process stations disposed along the conveying path. The process stations comprise at least one supply station for supplying capsules to be filled to the conveyor wheel, at least one opening station for opening the capsules by separating the upper and lower capsule parts, at least one filling station for filling the lower capsule parts, at least one closing station for closing the filled capsules by connecting the upper and lower capsule parts, and at least one discharge station for discharging the filled capsules. A method for filling capsules is also described.

Abstract: A light emitting diode (LED) includes a plurality of Group III-nitride nanowires extending from a substrate, at least one Group III-nitride pyramidal shell layer located on each of the plurality of Group III-nitride nanowires, a continuous Group III-nitride pyramidal layer located over the at least one Group III-nitride pyramidal shell layer, and a continuous pyramidal contact layer located over the continuous Group III-nitride pyramidal layer. The at least one Group III-nitride pyramidal shell layer is located in an active region of the LED. The plurality of Group III-nitride nanowires are doped one of n- or p-type. The continuous Group III-nitride pyramidal layer is doped another one of p- or n-type to form a junction with the plurality of Group III-nitride nanowires. A distance from a side portion of the continuous contact layer to the plurality of Group III-nitride nanowires is shorter than a distance of an apex of the continuous contact layer to the plurality of Group III-nitride nanowires.

Abstract: A rotary press comprises a rotor that can be rotated by a rotary drive. The rotor has an upper punch guide for upper press punches and a lower punch guide for lower press punches and a die plate arranged between the punch guides. The upper and lower press punches are configured interact with cavities of the die plate. A filling device loads filling material into cavities of the die plate and at least one measuring device coupled to the filling device for monitoring the availability of the filling material in the filling device. The rotary press further includes at least one upper pressing device and at least one lower pressing device that are configured to interact with the upper press punches and the lower press punches to press the filling material in the cavities of the die plate into a pellet. An ejection device is configured to eject the pellets. wherein at least one measuring device is arranged on or in the filling device for monitoring the availability of the filling material in the filling device.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: The invention relates to a pressing device for a press, in particular for a rotary press, wherein the pressing device is designed to work together with at least one press punch of the press during operation of the press so that the at least one press punch presses material located in a receiver, wherein the pressing device comprises a force measuring device for measuring the force exerted by the at least one press punch on the pressing device, wherein at least one section of the pressing device is moveable between a closed operation position and an opened maintenance position, and wherein the force measuring device in the opened maintenance position is at least partially accessible from outside. The invention also relates to a rotary press.

Abstract: The invention relates to a press, a rotary press in particular, comprising a press housing in which several operating components of the press are arranged, further comprising power-related components, which provide the operating components with electric energy for the operation, and comprising control components which exchange control- and/or measurement signals with the operating components and control signals with the power-related components, characterised in that the power-related components are arranged separately from the control components in a power element box which can be arranged at option on or within the press housing, or outside of the press housing and separately from the same.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: An apparatus for filling capsules comprises a conveyor wheel, on the circumference of which a plurality of capsule holders is provided, a conveyor wheel drive that alternately passes through stopping times and movement times, so that the capsule holders move along the conveying path in cycles, and a plurality of process stations disposed along the conveying path. The process stations comprise at least one supply station for supplying capsules to be filled to the conveyor wheel, at least one opening station for opening the capsules by separating the upper and lower capsule parts, at least one filling station for filling the lower capsule parts, at least one closing station for closing the filled capsules by connecting the upper and lower capsule parts, and at least one discharge station for discharging the filled capsules. A method for filling capsules is also described.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: The invention relates to a press, a rotary press in particular, comprising a press housing in which several operating components of the press are arranged, further comprising power-related components, which provide the operating components with electric energy for the operation, and comprising control components which exchange control- and/or measurement signals with the operating components and control signals with the power-related components, characterised in that the power-related components are arranged separately from the control components in a power element box which can be arranged at option on or within the press housing, or outside of the press housing and separately from the same.

Abstract: The invention relates to a pressing device for a press, in particular for a rotary press, wherein the pressing device is designed to work together with at least one press punch of the press during operation of the press so that the at least one press punch presses material located in a receiver, wherein the pressing device comprises a force measuring device for measuring the force exerted by the at least one press punch on the pressing device, wherein at least one section of the pressing device is moveable between a closed operation position and an opened maintenance position, and wherein the force measuring device in the opened maintenance position is at least partially accessible from outside. The invention also relates to a rotary press.

Abstract: The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: System for the production of preforms made of a powder material, in particular tablets, with a rotary tablet press, which is arranged in a housing supported by a frame in the housing, wherein an electric drive motor is integrated into the rotor of the tablet press and the rotor is swivel-mounted on a middle column of the frame, and a control cabinet for the tablet press, which contains among other things a machine computer for the operation of the tablet press, wherein the middle column is supported on a horizontal load-bearing element, which is arranged at a distance above a base plate placed on the floor and the control cabinet is arranged in the interim space between the horizontal load-bearing element and the base plate.

Abstract: The present invention is related to an apparatus and a method for the measurement of the vertical position of upper and lower punches, pairwisely associated to a rotatably driven rotor of a rotary tablet press and rotating synchronously with the rotor, which perform a vertical movement in certain regions along the circumference of their rotational movement during a rotation of the rotor. The apparatus features at least one scale arranged on at least one of the upper and/or lower punches, running in parallel to the vertical movement direction of the respective upper and/or lower punch, and at least one reading device associated to the scale, also rotating synchronously with the rotor, by means of which a vertical position of the respective upper and/or lower punch can be measured by reading out the scale. The inventions is furthermore related to a corresponding rotary tablet press and a corresponding method.

Abstract: A method for quality surveillance in manufacturing tablets in a rotary tablet press which, in a compression chamber, has a rotor with upper and lower rams, a die-plate, a cam system for the rams, at least one compressing station, and a charging system for the powdered material requiring compression wherein the tablets are checked for chemical and/or mechanical properties, wherein at least some chemical and/or mechanical data of the tablets is obtained by means of a NIR or LIF sensor in the compression chamber after the upper rams have left the dies, after a measuring procedure has been initiated by a machine computer in response to the die positions determined by a position generator relative to the NIR or LIF sensor.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.