Abstract: Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

Abstract: A cooling system for a rotary tablet press with which a rotor is driven by an electrical drive motor and the rotor and drive motor are arranged in a closed housing, and a control cabinet for the drive motor and further units in the housing, wherein arranged within the housing is a cooling machine whose evaporator is part of a first heat exchanger, whose other part is arranged in a coolant circuit for the drive motor, a fan is arranged in a channel in the housing closed relative to the housing interior, where the fan draws cool air in via an air inlet of the housing and gives it off via an air outlet of the housing, wherein the cool air is engaged in heat exchange with a condenser of the cooling machine.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

Abstract: Device for monitoring the production of tablets in a rotary press, with die bores in a circular die plate for the accommodation of a powder to be pressed, upper- and lower stamps, a pressing station for pressing the powder in the die bores by means of the upper and lower stamps, a tablet stripper for stripping off the tablets ejected by the lower stamps from the upper side of the circular die plate and a machine computer, wherein a contactless working temperature measurement device, being in communication with the machine computer, with a measurement plane between the pressing station and the tablet stripper, is arranged in the press room of the rotary press, and the measurement time of the temperature measurement device is such that at least some of the tablets per rotation of the circular die plate can be established in their temperature.

Abstract: The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.

Abstract: The present invention is related to an apparatus and a method for the measurement of the vertical position of upper and lower punches, pairwisely associated to a rotatably driven rotor of a rotary tablet press and rotating synchronously with the rotor, which perform a vertical movement in certain regions along the circumference of their rotational movement during a rotation of the rotor. The apparatus features at least one scale arranged on at least one of the upper and/or lower punches, running in parallel to the vertical movement direction of the respective upper and/or lower punch, and at least one reading device associated to the scale, also rotating synchronously with the rotor, by means of which a vertical position of the respective upper and/or lower punch can be measured by reading out the scale. The inventions is furthermore related to a corresponding rotary tablet press and a corresponding method.

Abstract: System for the production of preforms made of a powder material, in particular tablets, with a rotary tablet press, which is arranged in a housing supported by a frame in the housing, wherein an electric drive motor is integrated into the rotor of the tablet press and the rotor is swivel-mounted on a middle column of the frame, and a control cabinet for the tablet press, which contains among other things a machine computer for the operation of the tablet press, wherein the middle column is supported on a horizontal load-bearing element, which is arranged at a distance above a base plate placed on the floor and the control cabinet is arranged in the interim space between the horizontal load-bearing element and the base plate.

Abstract: A cooling system for a rotary tablet press with which a rotor is driven by an electrical drive motor and the rotor and drive motor are arranged in a closed housing, and a control cabinet for the drive motor and further units in the housing, wherein arranged within the housing is a cooling machine whose evaporator is part of a first heat exchanger, whose other part is arranged in a coolant circuit for the drive motor, a fan is arranged in a channel in the housing closed relative to the housing interior, where the fan draws cool air in via an air inlet of the housing and gives it off via an air outlet of the housing, wherein the cool air is engaged in heat exchange with a condenser of the cooling machine.

Abstract: Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

Abstract: Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

Abstract: Device for monitoring the production of tablets in a rotary press, with die bores in a circular die plate for the accommodation of a powder to be pressed, upper- and lower stamps, a pressing station for pressing the powder in the die bores by means of the upper and lower stamps, a tablet stripper for stripping off the tablets ejected by the lower stamps from the upper side of the circular die plate and a machine computer, wherein a contactless working temperature measurement device, being in communication with the machine computer, with a measurement plane between the pressing station and the tablet stripper, is arranged in the press room of the rotary press, and the measurement time of the temperature measurement device is such that at least some of the tablets per rotation of the circular die plate can be established in their temperature.

Abstract: Tablet press, with an upper housing part for receiving a rotor and comprising pressing tools, a lower housing part with side walls for receiving a drive device for the rotor, servo drives for peripheral apparatus for the tablet press, a switch cabinet for receiving a machine computer, electrical parts, components, such as power units with their control switches for the drive device, servo drive and peripheral apparatus, a switch cabinet housing with a rear wall, a bottom wall, a cover wall and side walls and an open front face being attached via its rear face to the outer face of a side wall of the lower housing part, furthermore with a hood which comprises hood side walls and a hood cover wall and which is pivotally mounted about a vertical axis on the switch cabinet housing or on the lower housing part by means of a hood side wall, the hood being constructed and slidable over the switch cabinet housing, in such a manner that the hood cover wall seals the front face of the switch cabinet housing and the hood

Abstract: Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

Abstract: Tablet press, with an upper housing part for receiving a rotor and comprising pressing tools, a lower housing part with side walls for receiving a drive device for the rotor, servo drives for peripheral apparatus for the tablet press, a switch cabinet for receiving a machine computer, electrical parts, components, such as power units with their control switches for the drive device, servo drive and peripheral apparatus, a switch cabinet housing with a rear wall, a bottom wall, a cover wall and side walls and an open front face being attached via its rear face to the outer face of a side wall of the lower housing part, furthermore with a hood which comprises hood side walls and a hood cover wall and which is pivotally mounted about a vertical axis on the switch cabinet housing or on the lower housing part by means of a hood side wall, the hood being constructed and slidable over the switch cabinet housing, in such a manner that the hood cover wall seals the front face of the switch cabinet housing and the hood

Abstract: A method of producing a very large area germanium layer on a silicon substrate, comprises forming an initial layer of germanium on the silicon substrate such that rounded S—K protuberances are produced by lattice mismatch. Oxidation produces silicon dioxide between the protuberances, and a subsequent reduction step exposes the tops of the protuberances. Since the top regions are almost perfectly relaxed and free of stress, these form nucleation sites for the subsequent growth of a final layer of germanium, formed as single crystals each extending from a nucleation site.

Abstract: A method for quality surveillance in manufacturing tablets in a rotary tablet press which, in a compression chamber, has a rotor with upper and lower rams, a die-plate, a cam system for the rams, at least one compressing station, and a charging system for the powdered material requiring compression wherein the tablets are checked for chemical and/or mechanical properties, wherein at least some chemical and/or mechanical data of the tablets is obtained by means of a NIR or LIF sensor in the compression chamber after the upper rams have left the dies, after a measuring procedure has been initiated by a machine computer in response to the die positions determined by a position generator relative to the NIR or LIF sensor.

Abstract: An apparatus for singling out tablets for a rotary tablet-compressing press the rotor of which has associated therewith a nozzle which, via a line and a controllable valve disposed in the line, is adapted to be connected to a pressure source in order to route a tablet into a rejects duct wherein the control signals for the valve are produced by a control device, characterized in that the line, between the orifice of the nozzle and the valve, has disposed a pressure sensor which delivers a sensor signal if the valve is opened or a predetermined minimum pressure prevails in the line and a logic evaluation circuit is provided into which the sensor signal and the control signal are input and that an error signal is produced in the evaluation circuit, which signal is evaluated by the control device if the time relation of the control signals and the sensor signals deviates from a predetermined relation.

Abstract: A method for operating a rotary tabletting machine the rotor of which has a die-plate, upper rams, and lower rams which interact with the die bores, and has a stationary filling device interacting with the upper side of said die-plate, and wherein the lower rams are located in the die bores when they run along beneath the filling device and said lower rams are adjusted in their positions by means of a filling and/or proportioning cam, wherein said filling and/or proportioning cams is set into vibrations.

Abstract: A method of producing a very large area germanium layer on a silicon substrate, comprises forming an initial layer of germanium on the silicon substrate such that rounded S-K protuberances are produced by lattice mismatch. Oxidation produces silicon dioxide between the protuberances, and a subsequent reduction step exposes the tops of the protuberances. Since the top regions are almost perfectly relaxed and free of stress, these form nucleation sites for the subsequent growth of a final layer of germanium, formed as single crystals each extending from a nucleation site.