Abstract: A memory device is described that comprises determining which read data state of more than 2X read data states a memory cell is in after the memory cell has been programmed to one of 2X program data states, wherein the determined read data state corresponds to X digits of read data and at least one digit of error data, and wherein X is a positive integer.

Abstract: Various embodiments include methods, apparatus, and systems to scan at least a portion of a memory device for potential errors when a condition for scanning is met. The condition may be dependent on one or more of a number of read operations, a number of write operations, time, and others. Other embodiments including additional methods, apparatus, and systems are disclosed.

Abstract: Methods and devices operate to apply and provide differing levels of error correction within a multi-level, non-volatile memory. In an example, the differing level of error correction is provided within one page of a row of multi-level cells relative to other pages stored within the same row of multi-level cells.

Abstract: A memory device is described that uses extra data bits stored in a multi-level cell (MLC) to provide error information. An example embodiment provides a memory cell that uses more than 2X logic levels to store X data bits and an error bit. At least one extra bit provided during a read operation is used to provide error information or a confidence factor of the X data bits originally stored in the cell.

Abstract: Memory devices and methods are described and shown that are capable of being configured in a chain. In one configuration, a single data input port and a single data output port are utilized at a host to communicate with the chain of memory devices. Methods for assigning identifiers to memory devices in the chain are described that include detection of a presence or absence of downstream memory devices. In selected examples, identifiers are assigned sequentially to memory devices in the chain until no additional downstream memory devices are detected.

Abstract: Memory devices and methods are described such as those that mix data and associated error correction code blocks between multiple memory device locations. Examples include mixing between multiple memory blocks, mixing between memory pages, mixing between memory chips and mixing between memory modules. In selected examples, memory blocks and associated error correction code are mixed between multiple levels of memory device hierarchy.

Abstract: A memory device is described that provides increased output data to help evaluate data errors from bit line coupling and floating gate coupling during a read operation. Multiple rows, or pages, of data are read to allow an internal or external decoder to evaluate memory cell data.

Abstract: Various embodiments include methods, apparatus, and systems to scan at least a portion of a memory device when a condition for scanning is met. The condition may be dependent on one or more of a number of read operations, a number of write operations, time, and others. Other embodiments including additional methods, apparatus, and systems are disclosed.

Abstract: Methods and devices operate to apply and provide differing levels of error correction within a multi-level, non-volatile memory. In an example, the differing level of error correction is provided within one page of a row of multi-level cells relative to other pages stored within the same row of multi-level cells.

Abstract: A memory device is described that provides increased output data to help evaluate data errors from bit line coupling and floating gate coupling during a read operation. Multiple rows, or pages, of data are read to allow an internal or external decoder to evaluate memory cell data.

Abstract: A memory device is described that uses extra data bits stored in a multi-level cell (MLC) to provide error information. An example embodiment provides a memory cell that uses more than 2X logic levels to store X data bits and an error bit. At least one extra bit provided during a read operation is used to provide error information or a confidence factor of the X data bits originally stored in the cell.

Abstract: Methods, apparatus, systems, and data structures may operate to generate or store error correction data for each of a plurality of sectors of a page except for a particular sector in the page and combining a block management data with the particular sector to generate a modified sector. Additionally, various methods, apparatus, systems, and data structures may operate to generate or store error correction data for the modified sector and combining the plurality of sectors, the error correction data for each of the plurality of sectors other than the particular page, and the block management data and the error correction data for the modified sector.

Abstract: A memory device is described that uses extra data bits stored in a multi-level cell (MLC) to provide error information. An example embodiment provides a memory cell that uses more than 2X logic levels to store X data bits and an error bit. At least one extra bit provided during a read operation is used to provide error information or a confidence factor of the X data bits originally stored in the cell.

Abstract: A memory device is described that uses extra data bits stored in a multi-level cell (MLC) to provide error information. An example embodiment provides a memory cell that uses more than 2X logic levels to store X data bits and an error bit. At least one extra bit provided during a read operation is used to provide error information or a confidence factor of the X data bits originally stored in the cell.