Abstract: An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area, wherein the pixel area comprises an active region and the transfer gate electrode is disposed on the active region. A method of fabricating the image sensor is also provided. The method comprises preparing a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, doping the polysilicon layer with impurity ions, and patterning the polysilicon layer.

Abstract: Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.

Abstract: An image sensor includes a photodiode formed in a substrate, a buffer oxide layer, a blocking layer, an upper oxide layer, and a transmission supplementary layer. The buffer oxide layer covers the photodiode, and the blocking layer is disposed on the buffer oxide layer to cover the photodiode. The upper oxide layer covers the blocking layer, and the transmission supplementary layer is interposed between the upper oxide layer and the buffer oxide layer to cover the photodiode. The transmission supplementary layer has a refractive index between the refractive index of the blocking layer and at least one reflective index selected from the refractive indexes of the buffer oxide layer and upper oxide layer.