Patents by Inventor Won-kyu Park
Won-kyu Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240133519Abstract: A liquefied gas storage tank includes a corner block disposed on a corner portion, wherein the corner block includes a lower block, an upper block and an upper connecting block, the upper block includes a first inner fixing unit and a second inner fixing unit respectively provided inside a first surface and a second surface, bonded and connected to a secondary barrier, and each having a structure in which a primary inner plywood, a primary corner insulating material, and a primary outer plywood are stacked, and an inner bent portion installed at a corner spatial portion between the first inner fixing unit and the second inner fixing unit, and both side surfaces of the inner bent portion that are perpendicular to the secondary barrier each have a height reduced from a total height of each of the first and second inner fixing units.Type: ApplicationFiled: December 14, 2021Publication date: April 25, 2024Inventors: Won Seok HEO, Seong Bo PARK, Hye Min CHO, Ki Joong KIM, Cheon Jin PARK, Min Kyu PARK, Jung Kyu PARK, Byeong Jin JEONG, Dong Woo KIM, Sung Kyu HONG, Gwang Soo GO, Jee Yeon HEO
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Publication number: 20240136359Abstract: Provided is a synaptic array structure. The synaptic array structure includes: an isolation insulating layer positioned in a predetermined area on a semiconductor substrate to isolate devices; TFT-type synaptic devices arranged in an array on an isolation insulating layer; and CMOS peripheral circuits provided on the semiconductor substrate. The TFT-type synaptic device includes: a source and a drain positioned on the isolation insulating layer; a semiconductor body positioned between the source and the drain; oxide layers positioned between the semiconductor body and the source/drain; a semiconductor layer for channel; a TFT gate insulating layer; and a TFT gate electrode. The present invention, based on CMOS integration technology, processes TFT-type synaptic devices and CMOS peripheral circuits together, thereby reducing the number of masks and fabrication steps used during the fabricating process.Type: ApplicationFiled: October 16, 2023Publication date: April 25, 2024Inventors: Jong-Ho LEE, Min Kyu PARK, Joon HWANG, Ryunhan GU, Won Mook KANG
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Publication number: 20240084969Abstract: The liquefied gas storage tank includes a primary barrier, a primary insulation wall, a secondary barrier, and a secondary insulation wall. In a state where unit elements are arranged adjacent to each other, each of the unit elements being formed by stacking the secondary insulation wall, the secondary barrier, and a fixed insulation wall which is a part of the primary insulation wall, the primary insulation wall may comprise: a connection insulation wall provided in the space between the adjacent fixed insulation walls; first slits formed between the fixed insulation walls and the connection insulation wall when the connection insulation wall is inserted and installed between the adjacent fixed insulation walls; a plurality of second slits formed in a lengthwise direction and a widthwise direction of the fixed insulation walls; and a first insulating filler material for filling the first slits.Type: ApplicationFiled: December 15, 2021Publication date: March 14, 2024Inventors: Seong Bo PARK, Won Seok HEO, Hye Min CHO, Ki Joong KIM, Cheon Jin PARK, Min Kyu PARK, Jung Kyu PARK, Byeong Jin JEONG, Dong Woo KIM, Sung Kyu HONG, Gwang Soo GO, Jee Yeon HEO
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Publication number: 20220159855Abstract: A display apparatus including display panel, a rear case to cover a rear of the display panel and the rear case including a cable fixing hole to which a cable is fixed, a connector connected to the cable and fastened to the rear case so that the cable is connected to the rear case, a cable holder to surround a part of the cable and fixed to the cable fixing hole so that the cable is fixed to the rear case, and a clamp to fix the cable holder to the cable fixing hole, wherein the clamp includes a first hook to be fixed to the cable fixing hole, and a second hook having a different shape than a shape of the first hook and to be fixed to the cable fixing hole to have a greater fixing force than a fixing force of the first hook.Type: ApplicationFiled: February 8, 2022Publication date: May 19, 2022Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ki Hun KIM, Kyoung Hwan KIM, Seong Soo KIM, Won Kyu PARK, Jin PARK, Kyeong Jae LEE, Byeong Kyu PARK
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Publication number: 20220028609Abstract: An embodiment discloses a method of manufacturing a rare-earth magnet, the method including: preparing a magnetic sintered body including RE, Fe, and B as compositional components (RE is selected from one or two or more selected from rare earth elements); applying a solution containing a grain boundary diffusion material to the sintered body; and performing grain boundary diffusion by heat-treating the sintered body, wherein the grain boundary diffusion material includes a heavy rare earth element (HREE) hydride and a light rare earth element (LREE) hydride.Type: ApplicationFiled: November 27, 2019Publication date: January 27, 2022Inventors: Hyun Seok LIM, Goon Seung GONG, Hyun Min NAH, Dong Hwan KIM, Won Kyu PARK, Seok BAE
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Patent number: 10306789Abstract: A display apparatus may include a display unit that includes a bottom chassis made of metal, a metal stand to support the display unit, a fixing bracket that is fixed to the bottom chassis and the stand, and an insulating member that electrically separates the fixing bracket and the bottom chassis. Because the fixing bracket and the bottom chassis are electrically separated from each other via the insulating member, electromagnetic noise that is generated in the bottom chassis may be prevented from being transmitted to the stand despite the stand being mounted on the fixing bracket.Type: GrantFiled: January 2, 2018Date of Patent: May 28, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong Hwan Park, Won Kyu Park, Da Woon Jung
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Publication number: 20180192529Abstract: A display apparatus may include a display unit that includes a bottom chassis made of metal, a metal stand to support the display unit, a fixing bracket that is fixed to the bottom chassis and the stand, and an insulating member that electrically separates the fixing bracket and the bottom chassis. Because the fixing bracket and the bottom chassis are electrically separated from each other via the insulating member, electromagnetic noise that is generated in the bottom chassis may be prevented from being transmitted to the stand despite the stand being mounted on the fixing bracket.Type: ApplicationFiled: January 2, 2018Publication date: July 5, 2018Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong Hwan PARK, Won Kyu PARK, Da Woon JUNG
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Publication number: 20180121027Abstract: A method of an electronic device includes displaying, by execution of a first application, first data within a first region, the first data being image data, and the first data displayed with a designated aspect ratio, in response to detecting an event, displaying an icon superimposed on the displayed first data, the icon being usable for executing a second application distinct from the first application, and in response to detecting a user input on the icon, displaying, within a second region smaller than the first region, the first data with the designated aspect ratio, and displaying, by execution of the second application, second data within a third region distinct from the second region, and the second region and the third region included in the first region.Type: ApplicationFiled: December 28, 2017Publication date: May 3, 2018Inventors: Young-Ri KIM, Bong-Hee Han, Yoo-Jin Hong, Won-Kyu Park, Yu-Jin Lee
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Patent number: 9885381Abstract: The present invention relates to an extrusion-type connecting rod which is installed between a piston and a crank and can convert the reciprocating motion of the piston into the rotary motion of a crank shaft, an extrusion apparatus for a connecting rod, and a manufacturing method for the extrusion-type connecting rod.Type: GrantFiled: April 4, 2014Date of Patent: February 6, 2018Assignee: KOREA AUTOMOTIVE TECHNOLOGY INSTITUTEInventors: Si Young Sung, Beom Suck Han, Won Kyu Park
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Publication number: 20170361588Abstract: Disclosed is a fiber structure including a halogen-free polymer layer such as a styrenic block (SBC) copolymer. The fiber structure has environmentally-friendly properties and reduced weight, as compared to conventional materials such as PVC and has improved low temperature stability, fixing ability and resistance to deformation.Type: ApplicationFiled: September 15, 2016Publication date: December 21, 2017Inventors: Oh-Deok Kwon, Hyun-Dae Cho, Hong-Chan Jeon, Myung-Ryoul Lee, Bong-Hyun Park, Keun-Soo Moon, Hyun-Sik Hwang, Joo-Suk Chae, Won-Kyu Park
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Publication number: 20160123382Abstract: The present invention relates to an extrusion-type connecting rod which is installed between a piston and a crank and can convert the reciprocating motion of the piston into the rotary motion of a crank shaft, an extrusion apparatus for a connecting rod, and a manufacturing method for the extrusion-type connecting rod.Type: ApplicationFiled: April 4, 2014Publication date: May 5, 2016Inventors: Si Young SUNG, Beom Suck HAN, Won Kyu PARK
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Patent number: 8999825Abstract: This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.Type: GrantFiled: November 21, 2013Date of Patent: April 7, 2015Assignees: Korea Advanced Nano Fab Center, Sungkyunkwan University Research & Business FoundationInventors: Won Kyu Park, Jong Gon Heo, Dong Hwan Jun, Jin Hong Park, Jae Woo Shim
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Patent number: 8944304Abstract: Disclosed herein is a breaking apparatus for glass substrates. The breaking apparatus includes a breaking bar connected to a linear driver, a plurality of linear bushes longitudinally mounted on the breaking bar and each including an outer barrel, a plurality of buffer cylinders longitudinally mounted on the breaking bar, and a breaking tip extending in one direction and having a bar shape with a predetermined width. Each of the buffer cylinders includes a hollow cylinder body generating pressure therein, a piston received in the cylinder body, and a piston rod connected to the piston. The breaking tip is disposed in a longitudinal direction of the breaking bar beneath the breaking bar and connected to the piston rods and the shafts to be brought into contact with a glass substrate.Type: GrantFiled: July 3, 2012Date of Patent: February 3, 2015Assignee: Corning Precision Materials Co., Ltd.Inventors: Hyung-sang Roh, Ja-Yong Koo, Sung Cheal Kim, Won-Kyu Park, Chang-Ha Lee
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Publication number: 20140359436Abstract: A method of controlling a screen in an electronic device is provided. The method includes checking whether a first application program is in a top-level display mode when a second application program execution event occurs after the first application program is displayed; changing and displaying a display form of the first application program when the first application program is in the top-level display mode; and displaying the second application program.Type: ApplicationFiled: May 28, 2014Publication date: December 4, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Young-Ri KIM, Bong-Hee Han, Yoo-Jin Hong, Won-Kyu Park, Yu-Jin Lee
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Publication number: 20140187021Abstract: This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+/p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.Type: ApplicationFiled: November 21, 2013Publication date: July 3, 2014Applicant: Korea Advanced Nano Fab CenterInventors: Won Kyu Park, Jong Gon Heo, Dong Hwan Jun, Jin Hong Park, Jae Woo Shim
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Patent number: 8766135Abstract: A glass substrate laser cutting device according to the invention includes: a working table that has a plurality of vacuum absorbing grooves; a laser cutter; a pressure sensor that measures a pressure sensor when suctioning the glass substrate in a vacuum state; a calculation processing unit that compares the vacuum pressure measured by the pressure sensor with a predetermined threshold pressure and determines whether the glass substrate is broken; a laser cutter that includes a leaser head moving along the cutting direction of the glass substrate and emitting a laser beam; and an optical sensor that is attached to the laser head so as to move together and is disposed at a point in front of the laser beam emitted to the outside so as to detect the breakage of the glass substrate.Type: GrantFiled: July 6, 2012Date of Patent: July 1, 2014Assignee: Samsung Corning Precision Materials Co., Ltd.Inventors: Hyung-sang Roh, Ja-Yong Koo, Sung Cheal Kim, Won-Kyu Park, Chang-Ha Lee
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Publication number: 20130291593Abstract: A glass substrate laser cutting device according to the invention includes: a working table that has a plurality of vacuum absorbing grooves; a laser cutter; a pressure sensor that measures a pressure sensor when suctioning the glass substrate in a vacuum state; a calculation processing unit that compares the vacuum pressure measured by the pressure sensor with a predetermined threshold pressure and determines whether the glass substrate is broken; a laser cutter that includes a leaser head moving along the cutting direction of the glass substrate and emitting a laser beam; and an optical sensor that is attached to the laser head so as to move together and is disposed at a point in front of the laser beam emitted to the outside so as to detect the breakage of the glass substrate.Type: ApplicationFiled: July 6, 2012Publication date: November 7, 2013Applicant: Samsung Corning Precision Materials Co., Ltd.Inventors: Hyung-sang ROH, Ja-Yong KOO, Sung Cheal KIM, Won-Kyu PARK, Chang-Ha LEE
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Publication number: 20130292444Abstract: Disclosed herein is a breaking apparatus for glass substrates. The breaking apparatus includes a breaking bar connected to a linear driver, a plurality of linear bushes longitudinally mounted on the breaking bar and each including an outer barrel, a plurality of buffer cylinders longitudinally mounted on the breaking bar, and a breaking tip extending in one direction and having a bar shape with a predetermined width. Each of the buffer cylinders includes a hollow cylinder body generating pressure therein, a piston received in the cylinder body, and a piston rod connected to the piston. The breaking tip is disposed in a longitudinal direction of the breaking bar beneath the breaking bar and connected to the piston rods and the shafts to be brought into contact with a glass substrate.Type: ApplicationFiled: July 3, 2012Publication date: November 7, 2013Applicant: Samsung Corning Precision Materials Co., Ltd.Inventors: Hyung Sang ROH, Ja-Yong Koo, Sung Cheal Kim, Won-Kyu Park, Chnag-Ha Lee
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Patent number: 6855600Abstract: The present invention realizes high integration by utilizing an aluminum oxide as a capacitor insulating layer having a high dielectric constant, improving characteristics of a semiconductor device by using a low temperature vapordeposition and a low temperature annealing, improving leakage current characteristics by utilizing titanium as an upper electrode of the capacitor and reduces manufacturing costs by simplifying the capacitor manufacturing process. Therefore, the present invention is very useful and effective.Type: GrantFiled: March 5, 2003Date of Patent: February 15, 2005Assignee: Hynix Semiconductor Inc.Inventor: Won-kyu Park
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Publication number: 20040097027Abstract: The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device, in which a LDD region is formed by implanting phosphor or as impurities, then a high concentration As is implanted to a bit line contact region and a gate poly and then phosphor is implanted again to the bit line contact region and the gate poly, so that the high concentration As can be surrounded by the phosphor implanted two times, whereby the resistance of the bit line contact and a data path can be maintained low and the leakage current and junction capacitance caused by the high implanting concentration of As of the bit line contact junction can be drastically lowered, thus improving the characteristics of a DRAM, and whereby the space between a MOS capacitor and a gate is reduced to minimize the generation of the Tr-off current and the capacitor region can be increased to increase the capacitance of the device.Type: ApplicationFiled: November 13, 2003Publication date: May 20, 2004Inventor: Won-Kyu Park