Abstract: A method for fabricating a variable resistance memory device includes forming a first electrode, forming a first metal oxide layer which satisfies chemical stoichiometry over the first electrode, forming a second metal oxide layer which is lower in oxygen content than the first metal oxide layer by reducing a part of the first metal oxide layer, and forming a second electrode over the second metal oxide layer.

Abstract: A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer.

Abstract: A method of forming a multi-component dielectric layer on the surface of a substrate by atomic layer deposition includes injecting a cocktail source of a plurality of sources at least having a cyclopentadienyl ligand, wherein the cocktail source is adsorbed on a surface of a substrate by injecting the cocktail source, performing a first purge process to remove a non-adsorbed portion of the cocktail source, injecting a reactant to react with the adsorbed cocktail source, wherein a multi-component layer is formed by the reaction between the reactant and the absorbed cocktail source, and performing a second purge process to remove reaction byproducts and an unreacted portion of the reactant.

Abstract: A method for fabricating a semiconductor device includes: forming an insulation layer over a semiconductor substrate; forming a first conductive layer over the insulation layer; forming a plurality of buried bit lines and insulation layer patterns isolated by a plurality of trenches, wherein the plurality of trenches are formed by etching the first conductive layer and the insulation layer; forming a sacrificial layer to gap-fill the trenches; forming a second conductive layer over the buried bit lines and the sacrificial layer; and forming a plurality of pillars over each of the buried bit lines by etching the second conductive layer.

Abstract: A semiconductor device includes a gate stacked structure including a gate dielectric layer over a semiconductor substrate, a metal layer formed over the gate dielectric layer, and a capping layer formed over the metal layer, where the capping layer includes a chemical element with a higher concentration at an interface between the capping layer and the metal layer than another region of the capping layer and the chemical element is operable to control an effective work function (eWF) of the gate stacked structure.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a gate dielectric layer formed on the substrate, and a metal electrode layer formed on the gate dielectric layer and including a compound of carbon and nitrogen, wherein a metal electrode formed from the metal electrode layer in the first region has a work function lower than a work function of a metal electrode formed from the metal electrode layer in the second region and a nitrogen concentration of the metal electrode of the first region is smaller than a nitrogen concentration of the metal electrode of the second region.

Abstract: A semiconductor device includes a dielectric layer, where the dielectric layer includes a metal oxide layer, a metal nitride carbide layer including hydrogen therein, and a reduction prevention layer inserted between the metal nitride carbide layer and the dielectric layer.

Abstract: The demand response system comprises an automatic meter reading (AMR) unit to generate metering information. The demand response system comprises a multiple utility complex unit (MUC) which provides DR information based on the metering information and manages utility supply schedule in combination. The demand response system comprises an eco index (EI) calculation unit which calculates an eco index based on the metering information. The demand response system comprises a demand response (DR) unit which obtains the CBL information based on the metering information and computes a the DR bill by using the CBL data, the DR information and EI obtained, and outputs the DR bill. The demand response system comprises a smart portal (SP) unit which provides users with the calculated DR bill. According to the disclosure, the demand response system can provide environmental and social information, in addition to economic information.

Abstract: Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate.

Abstract: A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate, forming a dipole capping layer over the gate dielectric layer, stacking a metal gate layer and a polysilicon layer over the dipole capping layer, and forming a gate pattern by etching the polysilicon layer, the metal gate layer, the dipole capping layer, and the gate dielectric layer.

Abstract: A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode.

Abstract: A wet electro-photographic printer includes a transfer/fixing apparatus having a subsidiary intermediate transfer unit disposed to contact a transfer belt to re-transfer an image on a printing paper after receiving the image from a transfer belt, a back-up unit disposed to contact the subsidiary intermediate transfer unit through the printing paper in order to transfer the image transferred to the subsidiary intermediate transfer unit to the printing paper, and a fixing unit fixing the image simultaneously or separately when the image transferred to the subsidiary intermediate transfer unit is re-transferred to the printing paper. The transfer belt includes a single non-elastic layer made of one material selected from polyimide, polycabonate and ethylene-tetrafluoroethylene.

Abstract: A liquid image developing system including a development container in which a developer having a charge is stored, a photosensitive body, and a development roller which is partially soaked in the developer in the development container and to rotate and form development nip. The system further includes a depositing portion to apply an electric potential to attach the developer to the surface of the development roller, a metering portion to regulate the developer attached to the surface of the development roller at a predetermined thickness at a front end of the development nip, and a cleaning portion to clean the surface of the development roller at a rear end of the development nip.

Abstract: A wet electro-photographic printer includes a transfer/fixing apparatus having a subsidiary intermediate transfer unit disposed to contact a transfer belt to re-transfer an image on a printing paper after receiving the image from a transfer belt, a back-up unit disposed to contact the subsidiary intermediate transfer unit through the printing paper in order to transfer the image transferred to the subsidiary intermediate transfer unit to the printing paper, and a fixing unit fixing the image simultaneously or separately when the image transferred to the subsidiary intermediate transfer unit is re-transferred to the printing paper. The transfer belt includes a single non-elastic layer made of one material selected from polyimide, polycabonate and ethylene-tetrafluoroethylene.

Abstract: A liquid image developing system including a development container in which a developer having a charge is stored, a photosensitive body, and a development roller which is partially soaked in the developer in the development container and to rotate and form development nip. The system further includes a depositing portion to apply an electric potential to attach the developer to the surface of the development roller, a metering portion to regulate the developer attached to the surface of the development roller at a predetermined thickness at a front end of the development nip, and a cleaning portion to clean the surface of the development roller at a rear end of the development nip.

Abstract: An image forming system in an electrophotographic printer and a method for forming an image using the system. The image forming system includes a photosensitive medium on which an electrostatic latent image is formed, a developing unit for developing the electrostatic latent image with developing solution having a predetermined color, a transfer medium onto which the developed image is transferred, an image charging unit for charging the image transferred onto the transfer medium, and a transferring unit for transferring the charged image onto a paper. In the above configuration, an electric force required for the transferring step is enhanced by the image charging unit before the image on the transfer medium is transferred onto the paper, and thereby the efficiency of transferring the image onto the paper is improved more.

Abstract: A pair of cleaning apparatuses for a liquid electrophotographic printer that can completely remove to residual toner from both a photo receptor belt and a transfer roller, respectively. Each cleaning apparatus is supplied with a liquid solvent used to dissolve toner remaining on the transfer roller and the photo receptor belt after a printing operation. Each of the pair of cleaning apparatuses can engage and disengage to and from the photo receptor belt and the transfer roller respectively upon user actuation or entry of a sheet of recording media into the electrophotographic printing apparatus. Each cleaning apparatus contains in rectangular felt material soaked with solvent positioned to mate with the surfaces of the photo receptor belt and the transfer roller.