Abstract: Disclosed is a method for manufacturing a lithium transition metal phosphate. The disclosed method for manufacturing a lithium transition metal phosphate comprises the steps of: injecting reaction materials containing lithium, a transition metal, and a phosphate, into a reactor, and mixing the raw materials at the molecular level in the reactor; and allowing the reaction materials to chemically react in the reactor so as to cause nucleation.

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract: A nonvolatile memory system includes a memory controller for copying a mapping data group including logical-physical address mapping information regarding user data from a nonvolatile memory to a mapping information storage unit, and transmit size information regarding the mapping data group to a host. The host may receive size information regarding the mapping data group from the nonvolatile memory system, and determine the order of commands to be transmitted to the nonvolatile memory based on the size information regarding the mapping data group.

Abstract: Organic photoelectronic devices and image sensors including the organic photoelectronic devices, include a first light-transmitting electrode at a side where light enters, a second light-transmitting electrode opposite to the first light-transmitting electrode, an active layer between the first and second light-transmitting electrodes, and an ultraviolet (UV) ray blocking layer on the first light-transmitting electrode, wherein the ultraviolet (UV) ray blocking layer includes at least one metal oxide having a light transmittance of less than or equal to about 75% for light of less than or equal to about 380 nm.

Abstract: A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract: Disclosed is a nonvolatile memory device which includes a nonvolatile memory including a plurality of LSB and MSB pages at a plurality of wordlines; and a controller controlling the nonvolatile memory. The controller controls the nonvolatile memory such that an LSB program operation on a first wordline of the plurality of wordlines is programmed and then an LSB program operation on a second wordline of the plurality of wordlines is programmed. When the LSB program operation on the second wordline is performed, the nonvolatile memory stores information about LSB data programmed at the first wordline at a spare area of the second wordline.

Abstract: Provided is a positive electrode active material for a lithium secondary battery including a positive electrode active material particle and an electrolyte-containing metal oxide coating layer having a porous structure and a method of manufacturing the same. A lithium secondary battery to which the positive electrode active material including the electrolyte-containing metal oxide coating layer is applied can have improved charge/discharge efficiency and lifespan characteristics at the same time.

Abstract: Provided are a crystalline iron phosphate doped with metals (MFePO4), which is used as a precursor of olivine-structured LiMFePO4 (LMFP) used as a cathode active material for lithium secondary batteries, and a method of preparing the crystalline iron phosphate, in which a crystalline iron phosphate doped with metals has the following Formula I obtained by crystallizing amorphous iron phosphate and doping the latter with a different type of a metal. Formula I: MFePO4, where M is selected from the group consisting of Ni, Co, Mn, Cr, Zr, Nb, Cu, V, Ti, Zn, Al, Ga, Mg, and B. The preparation of olivine-structured LMFP, which is used as a cathode active material for lithium secondary batteries, using the crystalline iron phosphate doped with metals as a precursor can increase efficiency and reduce processing costs as compared to another method of preparing the same by mixing different types of metals in a solid state.

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract: The present invention provides surface-modified silicon nanoparticles comprising a LixSiyOz top film and a carbon (C) coating layer on the surface of the nanoparticles by means of the addition of a lithium source and a carbon source during the manufacture of silicon nanoparticles or a post-treatment thereof. According to the present invention, the surface oxidation of the silicon nanoparticles, which would easily occur during a pulverization process, can be prevented. By using the silicon nanoparticles of which oxidation is prevented as a negative electrode material, problems related to decrease in capacity and electrolyte depletion resulting from an oxidized film can be mitigated. Thus, a deterioration in the properties of a lithium secondary battery can be prevented.

Abstract: The present invention relates to a method for preparing a lithium metal phosphor oxide, the method including: mixing an iron salt solution and a phosphate solution in a reactor; applying a shearing force to the mixed solution in the reactor during the mixing to form a suspension containing nano-sized iron phosphate precipitate particles; obtaining the nano-sized iron phosphate particles from the suspension; and mixing the iron phosphate with a lithium raw material and performing firing, and the lithium metal phosphor oxide according to the present invention has an Equation of LiMnFePO4. Herein, M is selected from the group consisting of Ni, Co, Mn, Cr, Zr, Nb, Cu, V, Ti, Zn, Al, Ga, and Mg, and n is in a range of 0 to 1.

Abstract: The present invention relates to a method for preparing nano-sized iron phosphate particles, the method including the steps of: mixing an iron salt solution and a phosphate solution in a reactor in order to prepare a suspension containing amorphous or crystalline iron phosphate precipitate; and applying a shearing force to the mixed solution inside the reactor during the step of mixing, wherein the suspension containing nano-sized iron phosphate precipitate particles is formed by means of the shearing force and the conditions inside the reactor. According to the present invention, micro-mixing takes place faster than nucleation, which provides an advantage for preparing nanoparticles and for preparing particles having a uniform particle size distribution.

Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Abstract: A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Abstract: An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.

Abstract: A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.

Abstract: There are provided a film-type negative electrode filled with an active material and a method of manufacturing the same. The negative electrode according to the present invention includes a porous base film and a negative active material nanoparticle filled in pores of the porous base film According to the present invention, an excessive change in volume of a negative active material can be minimized during charging and discharging so as to improve a lifespan characteristic.

Abstract: Provided are a crystalline iron phosphate doped with metals (MFePO4), which is used as a precursor of olivine-structured LiMFePO4 (LMFP) used as a cathode active material for lithium secondary batteries, and a method of preparing the crystalline iron phosphate, in which a crystalline iron phosphate doped with metals has the following Formula I obtained by crystallizing amorphous iron phosphate and doping the latter with a different type of a metal. Formula I: MFePO4, where M is selected from the group consisting of Ni, Co, Mn, Cr, Zr, Nb, Cu, V, Ti, Zn, Al, Ga, Mg, and B. The preparation of olivine-structured LMFP, which is used as a cathode active material for lithium secondary batteries, using the crystalline iron phosphate doped with metals as a precursor can increase efficiency and reduce processing costs as compared to another method of preparing the same by mixing different types of metals in a solid state.

Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.