Patents by Inventor Xiaofeng Fan
Xiaofeng Fan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10686785Abstract: The present application provides example website login methods and apparatuses. One example method includes identifying a website jump trigger indication to jump from a first website to a second website. A first token is then obtained from a cookie store of the web browser, the first token associated with a website identifier of the second website and a device fingerprint indicating a running environment at a time when the password-free proxy login was previously set. In response to determining that a current running environment corresponds to the device fingerprint, a second token corresponding to the first token is obtained, wherein the second token comprises an access token indicating that the second website grants password-free login permissions. A password-free login request is sent to the second website including the second token. In response to the second website verifying the second token, the second website is logged into without a password.Type: GrantFiled: September 11, 2018Date of Patent: June 16, 2020Assignee: Alibaba Group Holding LimitedInventor: Xiaofeng Fan
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Patent number: 10658419Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.Type: GrantFiled: September 22, 2017Date of Patent: May 19, 2020Assignee: Apple Inc.Inventors: Shingo Mandai, Cristiano L. Niclass, Nobuhiro Karasawa, Xiaofeng Fan, Arnaud Laflaquiere, Gennadiy A. Agranov
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Publication number: 20190356112Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.Type: ApplicationFiled: July 29, 2019Publication date: November 21, 2019Inventors: Chin Han Lin, Weiping Li, Xiaofeng Fan
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Patent number: 10462402Abstract: A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate.Type: GrantFiled: May 30, 2018Date of Patent: October 29, 2019Assignee: Apple Inc.Inventor: Xiaofeng Fan
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Patent number: 10454241Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.Type: GrantFiled: August 21, 2018Date of Patent: October 22, 2019Assignee: APPLE INC.Inventors: Tongbi T. Jiang, Weiping Li, Xiaofeng Fan
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Patent number: 10438987Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.Type: GrantFiled: September 22, 2017Date of Patent: October 8, 2019Assignee: Apple Inc.Inventors: Shingo Mandai, Cristiano L. Niclass, Nobuhiro Karasawa, Xiaofeng Fan, Arnaud Laflaquiere, Gennadiy A. Agranov
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Patent number: 10411437Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.Type: GrantFiled: November 5, 2018Date of Patent: September 10, 2019Assignee: APPLE INC.Inventors: Chin Han Lin, Weiping Li, Xiaofeng Fan
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Publication number: 20190181610Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.Type: ApplicationFiled: August 21, 2018Publication date: June 13, 2019Inventors: Tongbi T. Jiang, Weiping Li, Xiaofeng Fan
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Patent number: 10295145Abstract: A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.Type: GrantFiled: August 5, 2018Date of Patent: May 21, 2019Assignee: APPLE INC.Inventors: Neil MacKinnon, Weiping Li, Xiaofeng Fan
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Publication number: 20190089128Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.Type: ApplicationFiled: November 5, 2018Publication date: March 21, 2019Inventors: Chin Han Lin, Weiping Li, Xiaofeng Fan
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Publication number: 20190017678Abstract: A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.Type: ApplicationFiled: August 5, 2018Publication date: January 17, 2019Inventors: Neil MacKinnon, Weiping Li, Xiaofeng Fan
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Publication number: 20180375863Abstract: The present application provides example website login methods and apparatuses. One example method includes identifying a website jump trigger indication to jump from a first website to a second website. A first token is then obtained from a cookie store of the web browser, the first token associated with a website identifier of the second website and a device fingerprint indicating a running environment at a time when the password-free proxy login was previously set. In response to determining that a current running environment corresponds to the device fingerprint, a second token corresponding to the first token is obtained, wherein the second token comprises an access token indicating that the second website grants password-free login permissions. A password-free login request is sent to the second website including the second token. In response to the second website verifying the second token, the second website is logged into without a password.Type: ApplicationFiled: September 11, 2018Publication date: December 27, 2018Applicant: Alibaba Group Holding LimitedInventor: Xiaofeng FAN
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Publication number: 20180357332Abstract: Techniques for determining character string differences between a target character string and one or more candidate character strings are provided. In some implementations, a target bitmap is produced for the target character string and a target bitmap weight is calculated. A candidate bitmap and a candidate bitmap weight associated with a candidate character string is obtained. In response to determining that the candidate bitmap weight differs from the target bitmap weight by less than a first threshold value, an exclusive OR operation is performed between the target bitmap and the candidate bitmap. In response to determining that number of ones in the result of the exclusive OR is less than a second threshold value, the candidate character string is included in a character set that includes one or more character strings that are close to the target character string.Type: ApplicationFiled: August 21, 2018Publication date: December 13, 2018Applicant: Alibaba Group Holding LimitedInventor: Xiaofeng FAN
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Patent number: 10153614Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.Type: GrantFiled: December 18, 2017Date of Patent: December 11, 2018Assignee: APPLE INC.Inventors: Chin Han Lin, Weiping Li, Xiaofeng Fan
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Publication number: 20180342544Abstract: One or more cross-wafer capacitors are formed in an electronic component, circuit, or device that includes stacked wafers. One example of such a device is a stacked image sensor. The image sensor can include two or more wafers, with two wafers that are bonded to each other each including a conductive segment adjacent to, proximate, or abutting a bonding surface of the respective wafer. The conductive segments are positioned relative to each other such that each conductive element forms a plate of a capacitor. A cross-wafer capacitor is formed when the two wafers are attached to each other.Type: ApplicationFiled: May 31, 2018Publication date: November 29, 2018Inventors: Chiajen Lee, Xiaofeng Fan
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Patent number: 10103512Abstract: An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.Type: GrantFiled: July 4, 2017Date of Patent: October 16, 2018Assignee: APPLE INC.Inventors: Tongbi T. Jiang, Weiping Li, Xiaofeng Fan
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Publication number: 20180293375Abstract: Systems and methodologies for accessing resources associated with a Web-based application in accordance with one or more embodiments disclosed herein may include a browser that obtains at least first resources from a first domain and second resources from a second domain and a resource management component that facilitates controlled communication between the first resources and the second resources and prevents the first resources and the second resources from accessing other resources that the first resources and the second resources are not permitted to access. The resource management component may be further operable to contain restricted services in a sandbox containment structure and/or to isolate access-controlled resources in a service instance. In addition, the resource management component may be operable to facilitate the flexible display of resources from disparate domains and/or controlled communication therebetween.Type: ApplicationFiled: June 9, 2018Publication date: October 11, 2018Applicant: Microsoft Technology Licensing, LLCInventors: Helen J. Wang, Xiaofeng Fan, Collin Edward Jackson, Jonathan Ryan Howell, Zhenbin Xu
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Publication number: 20180278869Abstract: A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate.Type: ApplicationFiled: May 30, 2018Publication date: September 27, 2018Inventor: Xiaofeng Fan
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Patent number: 10079487Abstract: An apparatus includes a device, a comparison circuit, and a switch. The device includes a first terminal coupled to a first power supply signal, and a second terminal coupled to a ground reference. The comparison circuit is configured to compare a first voltage level on the first power supply signal to a second voltage level of a second power supply signal, and enable the device in response to a determination that the first voltage level is greater than the second voltage level. The switch circuit is configured to couple a power supply terminal of the comparison circuit to the first power supply signal in response to determining that the first voltage level is greater than the second voltage level, and to couple the power supply terminal to the second power supply signal in response to determining that the first voltage level is less than the second voltage level.Type: GrantFiled: June 7, 2016Date of Patent: September 18, 2018Assignee: Apple Inc.Inventors: Xiaofeng Fan, Xin Y. Zhang, Junjun Li
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Patent number: 10072815Abstract: A radiation source includes a semiconductor substrate, an array of vertical-cavity surface-emitting lasers (VCSELs) formed on the substrate, which are configured to emit optical radiation, and a transparent crystalline layer formed over the array of VCSELs. The transparent crystalline layer has an outer surface configured to diffuse the radiation emitted by the VCSELs.Type: GrantFiled: June 23, 2016Date of Patent: September 11, 2018Assignee: APPLE INC.Inventors: Neil MacKinnon, Weiping Li, Xiaofeng Fan