Abstract: The present disclosure provides a sintered neodymium-iron-boron permanent magnet, a preparation method and use thereof. The permanent magnet described herein comprises a grain and a grain boundary phase. The grain boundary phase is located on an epitaxial layer of the grain. The grain boundary phase comprises at least an RH. The grain comprises at least Nd2Fe14B. In the grain boundary phase within a depth of 100 ?m from the surface to the center of the sintered neodymium-iron-boron permanent magnet, the area of the grain boundary phase with an RH content of more than 6 wt % accounts for 50% or more of the total area of the grain boundary phase. The present disclosure adopts an RH and an RL as the diffusion source for composite diffusion, significantly improving the coercivity of the permanent magnet and the utilization rate of the RH in the diffusion source.

Abstract: Provided are methods and composition for treating certain neurodegenerative diseases, such as RGC loss-related degenerative disease and Parkinson's Disease, using in vivo conversion of glial cells to neurons by PTB and optionally nPTB knock down via CRISPR/Cas delivered by AAV vectors.

Abstract: A data storage device includes a memory device that includes a plurality of zones of a zoned namespace and a controller coupled to the memory device. During operation, the controller maintains a window-based read and write monitor data structure to determine the read density and write density of each of the zones. The read density and write density are utilized to determine a cost for allocating wear leveling data for each zone. Based on the cost and the available storage capacity of the storage class memory, data, in a data management operation, is moved to either the storage class memory or the zone with the low cost. The host device is informed of the storage class memory usage for future data management operations.

Abstract: A data storage device includes a memory device and a controller coupled to the memory device. The memory device is arranged in a plurality of logical planes and the controller is configured to write log data and user data to separate planes within the memory device, such that the log data and user data are isolated from each other on separate planes. The controller is configured to read log data from one plane and user data on another plane simultaneously, where the log data and the user data are isolated from each other on separate planes.

Abstract: A data storage device includes a memory device that includes a plurality of zones of a zoned namespace and a controller coupled to the memory device. During operation, the controller maintains a window-based read and write monitor data structure to determine the read density and write density of each of the zones. The read density and write density are utilized to determine a cost for allocating wear leveling data for each zone. Based on the cost and the available storage capacity of the storage class memory, data, in a data management operation, is moved to either the storage class memory or the zone with the low cost. The host device is informed of the storage class memory usage for future data management operations.

Abstract: The present disclosure generally presents a method and apparatus to provide a bounded latency, where a device would report “non-service” of a command at the defined system level timeout or earlier if the device was unable to successfully return the data to the host.

Abstract: A Data Storage Device (DSD) includes a flash memory for storing data. Portions of the flash memory are grouped into logical groups based on at least one of a number of Program/Erase (P/E) cycles and a physical level location of the portions of the flash memory. A command performance latency is monitored for each logical group, and at least one polling time for each respective logical is set based on the monitored command performance latency for the logical group. The at least one polling time indicates a time to wait before checking whether a portion of the flash memory in the logical group has completed a command.

Abstract: A Data Storage Device (DSD) includes a flash memory for storing data. Portions of the flash memory are grouped into logical groups based on at least one of a number of Program/Erase (P/E) cycles and a physical level location of the portions of the flash memory. A command performance latency is monitored for each logical group, and at least one polling time for each respective logical is set based on the monitored command performance latency for the logical group. The at least one polling time indicates a time to wait before checking whether a portion of the flash memory in the logical group has completed a command.

Abstract: The present disclosure generally presents a method and apparatus to provide a bounded latency, where a device would report “non-service” of a command at the defined system level timeout or earlier if the device was unable to successfully return the data to the host.

Abstract: The present disclosure generally presents a method and apparatus to provide a bounded latency, where a device would report “non-service” of a command at the defined system level timeout or earlier if the device was unable to successfully return the data to the host.

Abstract: The present disclosure generally presents a method and apparatus to provide a bounded latency, where a device would report “non-service” of a command at the defined system level timeout or earlier if the device was unable to successfully return the data to the host.

Abstract: A soft information module is coupled between one or more flash memory devices and a decoder. The soft information module receives a putative value of one or more memory cells of the one or more flash memory devices based on a read of the one or more memory cells at an initial read level, and one or more respective indicators of whether the putative value was read at one or more respective different read levels offset from the initial read level, and receives a page indicator for the read. The soft information module determines a cell program region for the read based on the putative value, the one or more respective indicators, and the page indicator, identifies a predetermined confidence value for the region, and provides the confidence value to the decoder for association with the putative value, the confidence value being representative of a likelihood that the one or more memory cells was programmed to the putative value.

Abstract: A non-volatile memory is configured to allow programming and erase at the sub-block level. In a sub-block erase, some of the memory cells can be selected for erase while others are not selected for erase, such as by leaving their word lines to float while applying the erase voltage to the well structure of the physical block to which the sub-blocks belong. Although a sub-block erase applies a lower electric field across the non-selected memory cells than the erase selected memory cells, it still places the non-selected memory cells under some degree of stress and can lead to erase disturb. To help manage this erase disturb, each sub-block has an associated erase disturb count, which is incremented when another sub-block of the same physical block is erased, but reset when the sub-block itself is erase. Once a count reaches a threshold value, the sub-block can be marked for remedial action, such as refresh or garbage collection.

Abstract: A method is disclosed describing receiving a command to perform one of a write operation and a read operation for a memory arrangement, creating a number of hard streams to accept data, wherein the number of hard streams is less than or equal to a total number of streams that the memory arrangement may create, mapping data to the hard streams based upon a heat designation of the data, transferring data to the hard streams, the data transferred to the hard streams categorized based upon a heat value of the data and performing the one of the write operation and the read operation for the memory arrangement.

Abstract: Decoding logic is provided that is operational upon a data buffer to represent a plurality of variable nodes and a plurality of check nodes. For a respective one of the variable nodes, a vector component is selected from a confidence vector associated with the variable node. Using a respective one of the check nodes, a check node return value is calculated based on one or more other vector components from one or more other vectors and one or more vector indices corresponding to the one or more other vector components. The confidence vector is then updated based on the check node return value and an index for the check node return value, and a current state of a memory cell associated with the respective one of the variable nodes is determined based on a location of a primary one of multiple vector components within the updated confidence vector.

Abstract: A non-volatile memory is configured to allow programming and erase at the sub-block level. In a sub-block erase, some of the memory cells can be selected for erase while others are not selected for erase, such as by leaving their word lines to float while applying the erase voltage to the well structure of the physical block to which the sub-blocks belong. Although a sub-block erase applies a lower electric field across the non-selected memory cells than the erase selected memory cells, it still places the non-selected memory cells under some degree of stress and can lead to erase disturb. To help manage this erase disturb, each sub-block has an associated erase disturb count, which is incremented when another sub-block of the same physical block is erased, but reset when the sub-block itself is erase. Once a count reaches a threshold value, the sub-block can be marked for remedial action, such as refresh or garbage collection.

Abstract: A data storage device includes a non-volatile memory and a controller operationally coupled to the non-volatile memory. The controller is configured to access information stored at the non-volatile memory. The information includes a user data portion and an error correcting code (ECC) portion corresponding to the user data portion. The controller is further configured to modify the ECC portion in response to an error rate associated with the information exceeding a threshold. The one or more ECC parameters are modified without erasing or re-programming the user data portion.

Abstract: Systems and methods for controlling blocks in a memory device using a health indicator (such as the failed bit count) for the blocks are disclosed. However, the health indicator may exhibit noise, thereby resulting in an unreliable indicator of the health of the blocks in the memory device. In order to filter out the noise, a rolling average of the health indicator may be determined, and compared to the current health indicator. The comparison with the rolling average may indicate whether the current health indicator is an outlier, and thus should not be used. The health indicator may also be used to predict a future health indicator for different blocks in the memory device. Using the predicted future health indicator, the use of the blocks may be changed in order to more evenly wear the blocks.

Abstract: A storage device with a memory may include memory block leveling that improves data retention by considering localized temperature. A block's distance from a heat source may result in variance of data retention. The localized temperature may be used to improve data retention through a relocation, refreshing, or leveling of blocks that considers their physical location on the die and/or in the package.

Abstract: A soft information module is coupled between one or more flash memory devices and a decoder. The soft information module receives a putative value of one or more memory cells of the one or more flash memory devices based on a read of the one or more memory cells at an initial read level, and one or more respective indicators of whether the putative value was read at one or more respective different read levels offset from the initial read level, and receives a page indicator for the read. The soft information module determines a cell program region for the read based on the putative value, the one or more respective indicators, and the page indicator, identifies a predetermined confidence value for the region, and provides the confidence value to the decoder for association with the putative value, the confidence value being representative of a likelihood that the one or more memory cells was programmed to the putative value.