Patents by Inventor Yao Ko
Yao Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140012990Abstract: System and method for load balancing multiple file transfer protocol (FTP) servers to service secure FTP sessions having encrypted signals are disclosed. In one aspect, embodiments of the system include multiple FTP servers coupled to a load balancing agent. Each of the multiple FTP servers is associated with a unique port range and the load balancer receives an encrypted data signal in a secure FTP session on a given port and uses a port range within which the given port falls to identify which of the multiple FTP servers a corresponding control signal of the secure FTP session was previously sent.Type: ApplicationFiled: October 11, 2012Publication date: January 9, 2014Inventor: Yao Ko
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Publication number: 20140012989Abstract: System and method for load balancing multiple file transfer protocol (FTP) servers to service secure FTP sessions having encrypted signals are disclosed. In one aspect, embodiments of the system include multiple FTP servers coupled to a load balancing agent. Each of the multiple FTP servers is associated with a unique port range and the load balancer receives an encrypted data signal in a secure FTP session on a given port and uses a port range within which the given port falls to identify which of the multiple FTP servers a corresponding control signal of the secure FTP session was previously sent.Type: ApplicationFiled: August 2, 2012Publication date: January 9, 2014Applicant: Box, Inc.Inventor: Yao Ko
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Publication number: 20130256772Abstract: A device includes an active region and a coupling capacitor. The capacitor includes a first floating gate as an upper capacitor plate of the coupling capacitor, and a doped semiconductor region as a lower capacitor plate of the coupling capacitor. The doped semiconductor region includes a surface portion at a surface of the active region, and a sidewall portion lower than a bottom surface of the surface portion. The sidewall portion is on a sidewall of the active region. A capacitor insulator is disposed between the upper capacitor plate and the lower capacitor plate. The capacitor insulator includes an upper portion, and a sidewall portion lower than a bottom surface of the upper portion.Type: ApplicationFiled: April 2, 2012Publication date: October 3, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Hung Fu, Chun-Yao Ko, Tuo-Hsin Chien, Ting-Chen Hsu
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Publication number: 20130124932Abstract: A Solid-State Disk (SSD) Manufacturing Self Test (MST) capability enables an SSD manufacturer to generate and load tests onto SSDs, run the tests, and gather results. The SSDs self execute the loaded tests when powered up. The self executing is while coupled to a host that loaded the tests or while coupled to a rack unable to load the tests but enabled to provide power to the SSDs. The rack is optionally cost-reduced to enable cost-efficient parallel testing of relatively larger numbers of SSDs for production. The host writes the tests to an ‘input’ SMART log of each SSD, and each SSD writes results to a respective included ‘output’ SMART log. The commands include write drive, erase drive, SATA PHY burn-in, delay, and stress mode. The SSD MST capability is optionally used in conjunction with an SSD virtual manufacturing model.Type: ApplicationFiled: March 30, 2012Publication date: May 16, 2013Applicant: LSI CORPORATIONInventors: Karl David SCHUH, Karl Huan-Yao KO, Aloysius C. Ashley WIJEYERATNAM, Steven GASKILL, Thad OMURA, Sumit PURI, Jeremy Isaac Nathaniel WERNER
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Publication number: 20130092991Abstract: The NVM device includes a semiconductor substrate having a first region and a second region. The NVM device includes a data-storing structure formed in the first region and designed operable to retain charges. The NVM device includes a capacitor formed in the second region and coupled with the data-storing structure for data operations. The data-storing structure includes a first doped well of a first-type in the semiconductor substrate. The data-storing structure includes a first gate dielectric feature on the first doped well. The data-storing structure includes a first gate electrode disposed on the first gate dielectric feature and configured to be floating. The capacitor includes a second doped well of the first-type. The capacitor includes a second gate dielectric feature on the second doped well. The capacitor also includes a second gate electrode disposed on the second gate dielectric feature and connected to the first gate electrode.Type: ApplicationFiled: October 14, 2011Publication date: April 18, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Ta-Chuan Liao, Chien-Kuo Yang, Ying-Kit Tsui, Shih-Hsien Chen, Liang-Tai Kuo, Chun-Yao Ko
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Patent number: 8368130Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.Type: GrantFiled: December 14, 2010Date of Patent: February 5, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Yao Ko, Chung-Wei Chang, Han-Chi Liu, Shou-Gwo Wuu
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Publication number: 20120256293Abstract: A one-time programmable (OTP) device includes at least one transistor that is electrically coupled with a fuse. The fuse includes a silicon-containing line continuously extending between a first node and a second node of the fuse. A first silicide-containing portion is disposed over the silicon-containing line. A second silicide-containing portion is disposed over the silicon-containing line. The second silicide-containing portion is separated from the first silicide-containing portion by a predetermined distance. The predetermined distance is substantially equal to or less than a length of the silicon-containing line.Type: ApplicationFiled: May 13, 2011Publication date: October 11, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jyun-Ying LIN, Chun-Yao KO, Ting-Chen HSU
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Patent number: 8133792Abstract: A structure of a capacitor set is described, including at least two capacitors that are disposed at the same position on a substrate and include a first capacitor and a second capacitor. The first capacitor includes multiple first capacitor units electrically connected with each other in parallel. The second capacitor includes multiple second capacitor units electrically connected with each other in parallel. The first and the second capacitor units are arranged spatially intermixing with each other to form an array.Type: GrantFiled: July 4, 2006Date of Patent: March 13, 2012Assignee: United Microelectronics Corp.Inventors: Victor-Chiang Liang, Chien-Kuo Yang, Hua-Chou Tseng, Chun-Yao Ko, Cheng-Wen Fan, Yu-Ho Chiang, Chih-Yuh Tzeng
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Patent number: 8114752Abstract: A structure of a capacitor set is described, including at least two capacitors that are disposed at the same position on a substrate and include a first capacitor and a second capacitor. The first capacitor includes multiple first capacitor units electrically connected with each other in parallel. The second capacitor includes multiple second capacitor units electrically connected with each other in parallel. The first and the second capacitor units are arranged spatially intermixing with each other to form an array.Type: GrantFiled: February 6, 2010Date of Patent: February 14, 2012Assignee: United Microelectronics Corp.Inventors: Victor Chiang Liang, Chien-Kuo Yang, Hua-Chou Tseng, Chun-Yao Ko, Cheng-Wen Fan, Yu-Ho Chiang, Chih-Yuh Tzeng
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Publication number: 20110133260Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.Type: ApplicationFiled: December 14, 2010Publication date: June 9, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Yao Ko, Chung-Wei Chang, Han-Chi Liu, Shou-Gwo Wuu
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Patent number: 7879639Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.Type: GrantFiled: April 13, 2007Date of Patent: February 1, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Yao Ko, Chung-Wei Chang, Han-Chi Liu, Shou-Gwo Wuu
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Publication number: 20100221865Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.Type: ApplicationFiled: May 14, 2010Publication date: September 2, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ("TSMC")Inventors: Chung-Wei Chang, Han-Chi Liu, Chun-Yao Ko, Shou-Gwo Wuu
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Publication number: 20100140741Abstract: A structure of a capacitor set is described, including at least two capacitors that are disposed at the same position on a substrate and include a first capacitor and a second capacitor. The first capacitor includes multiple first capacitor units electrically connected with each other in parallel. The second capacitor includes multiple second capacitor units electrically connected with each other in parallel. The first and the second capacitor units are arranged spatially intermixing with each other to form an array.Type: ApplicationFiled: February 6, 2010Publication date: June 10, 2010Applicant: UNITED MICROELECTRONICS CORP.Inventors: Victor Chiang Liang, Chien-Kuo Yang, Hua-Chou Tseng, Chun-Yao Ko, Cheng-Wen Fan, Yu-Ho Chiang, Chih-Yuh Tzeng
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Patent number: 7732844Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.Type: GrantFiled: March 6, 2007Date of Patent: June 8, 2010Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Wei Chang, Han-Chi Liu, Chun-Yao Ko, Shou-Gwo Wuu
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Publication number: 20080251821Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.Type: ApplicationFiled: April 13, 2007Publication date: October 16, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Yao Ko, Chung-Wei Chang, Han-Chi Liu, Shou-Gwo Wuu
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Patent number: 7388187Abstract: An image sensor device includes a semiconductor substrate having a first type of conductivity, a semiconductor layer having the first type of conductivity formed on the semiconductor substrate, and pixels formed in the semiconductor layer. The semiconductor layer includes a first deep well having the first type of conductivity and substantially underlying the plurality of pixels, and a second deep well having a second type of conductivity different from the first type of conductivity and substantially underlying the first deep well.Type: GrantFiled: March 6, 2007Date of Patent: June 17, 2008Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Han-Chi Liu, Chung-Wei Chang, Shou-Gwo Wuu, Tong-Chern Ong, Chun-Yao Ko
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Publication number: 20080105944Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.Type: ApplicationFiled: March 6, 2007Publication date: May 8, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chung-Wei Chang, Han-Chi Liu, Chun-Yao Ko, Shou-Gwo Wuu
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Publication number: 20080012092Abstract: A structure of a capacitor set is described, including at least two capacitors that are disposed at the same position on a substrate and include a first capacitor and a second capacitor. The first capacitor includes multiple first capacitor units electrically connected with each other in parallel. The second capacitor includes multiple second capacitor units electrically connected with each other in parallel. The first and the second capacitor units are arranged spatially intermixing with each other to form an array.Type: ApplicationFiled: July 4, 2006Publication date: January 17, 2008Inventors: Victor-Chiang Liang, Chien-Kuo Yang, Hua-Chou Tseng, Chun-Yao Ko, Cheng-Wen Fan, Yu-Ho Chiang, Chih-Yuh Tzeng
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Publication number: 20070114752Abstract: A jig device is provided for supporting an uncured pre-assembled frame part of a composite bicycle frame during the curing of the pre-assembled frame part in a heating chamber. The jig device includes a base plate which has a hanging element to hang the base plate on a support, and a positioning device mounted adjustably on the base plate and adapted to position the pre-assembled frame part on the base plate. A process of making a composite bicycle frame is also disclosed.Type: ApplicationFiled: September 8, 2005Publication date: May 24, 2007Inventor: Chao-Yao Ko
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Patent number: 5146382Abstract: A floppy disk cleaning machine which has a locker to cause a cam above a link to compress a positioning plate for holding of a floppy disk, a sector wheel at an end of the link to drive a sector wheel at a driving rod which consequently disengage the cam from two rolling shafts which then cause two cleaning rods to hold the floppy disk at its read/write slots by action of a spring, and a motor with rubber shaft to drive a turn plate to rotate the floppy disk for cleaning purpose. The rolling shafts can be extended by the cam after the cleaning process for removal of the floppy disk from the cleaning machine.Type: GrantFiled: January 3, 1991Date of Patent: September 8, 1992Inventor: Chen Yao-Ko