Abstract: An audio jack connector adapted for mating with a plug connector which has an insulating loop thereon includes a dielectric housing, a plurality of signal terminals, and a set of switch terminals. The dielectric housing defines an inserting hole therethrough. The signal terminals are received in the dielectric housing. The set of switch terminals include a first switch terminal and a second switch terminal disposed in the dielectric housing. The second switch terminal has a contact portion extending into the inserting hole. When the plug connector is fully inserted into the inserting hole, the signal terminals are electrically connected with the plug connector, and the contact portion of the second switch terminal is against and pushed outwardly by the insulating loop of the plug connector to make the second switch terminal electrically connected with the first switch terminal.

Abstract: A method and apparatus for inspecting a photolithography mask for defects is provided. The inspection method comprises providing a defect area image to an image simulator wherein the defect area image is an image of a portion of a photolithography mask, and providing a set of lithography parameters as a second input to the image simulator. The defect area image may be provided by an inspection tool which scans the photolithography mask for defects using a high resolution microscope and captures images of areas of the mask around identified potential defects. The image simulator generates a first simulated image in response to the defect area image and the set of lithography parameters. The first simulated image is a simulation of an image which would be printed on a wafer if the wafer were to be exposed to an illumination source directed through the portion of the mask.

Abstract: A SIM card connector includes an insulating body and a plurality of electric terminals. The insulating body has accepting holes and accepting cavities. The electric terminal has a welded slice, a contact and a fixing portion. The welded slice and the contact are accepted in the accepting hole, the contact projects from the accepting hole. A lump is formed in one side of the fixing portion, the fixing portion accepted in the accepting cavities. While the SIM card connector passes through a SMT apparatus, the insulated body is soften and the lump is against the side wall of the accepting cavities for preventing the holding portion out of the insulated body. Therefore, the SIM card connector is welded firmly in the PCB of a mobile.

Abstract: A SIM card connector includes an insulating body and a plurality of electric terminals. The insulating body has accepting holes and accepting cavities. The electric terminal has a welded slice, a contact and a fixing portion. The welded slice and the contact are accepted in the accepting hole, the contact projects from the accepting hole. A lump is formed in one side of the fixing portion, the fixing portion accepted in the accepting cavities. While the SIM card connector passes through a SMT apparatus, the insulated body is soften and the lump is against the side wall of the accepting cavities for preventing the holding portion out of the insulated body. Therefore, the SIM card connector is welded firmly in the PCB of a mobile.

Abstract: Systems and methods for timing-driven shape closure in integrated circuit (“IC”) fabrication are provided. These Integrated Design-Manufacturing Processes (“IDMP”) include a delta flow that integrates information of the IC fabrication timing and geometry verification processes into the IC design. The delta flow is an incremental flow that includes delta-geometry timing prediction processes and/or delta-timing shape prediction processes for processing difference information associated with circuit characterization parameters. The delta flow independently re-characterizes an IC design using the difference or delta information corresponding to the circuit characterization parameters. The delta flow provides delta outputs (incremental) that enhance or re-characterize corresponding parameters of the devices and interconnect structures without the need to generate new circuit characterization parameters and without the need to re-process all information of the IC design.

Abstract: A method and apparatus for performing an operation on hierarchically described integrated circuit layouts such that the original hierarchy of the layout is maintained is provided. The method comprises providing a hierarchically described layout as a first input and providing a particular set of operating criteria corresponding to the operation to be performed as a second input. The mask operation, which may include operations such as OPC and logical operations such as NOT and OR, is then performed on the layout in accordance with the particular set of operating criteria. A first program data comprising hierarchically configured correction data corresponding to the hierarchically described layout is then generated in response to the layout operation such that if the first program data were applied to the flattened layout an output comprising data representative of the result of performing the operation on the layout would be generated.

Abstract: Phase shifting allows generating very narrow features in a printed features layer. Thus, forming a fabrication layout for a physical design layout having critical features typically includes providing a layout for shifters. Specifically, pairs of shifters can be placed to define critical features, wherein the pairs of shifters conform to predetermined design rules. After placement, phase information for the shifters associated with the set of critical features can be assigned. Complex designs can lead to phase-shift conflicts among shifters in the fabrication layout. An irresolvable conflict can be passed to the design process earlier than in a conventional processes, thereby saving valuable time in the fabrication process for printed circuits.

Abstract: Phase shifting allows generating very narrow features in a printed features layer. Thus, forming a fabrication layout for a physical design layout having critical features typically includes providing a layout for shifters. Specifically, pairs of shifters can be placed to define critical features, wherein the pairs of shifters conform to predetermined design rules. After placement, phase information for the shifters associated with the set of critical features can be assigned. Complex designs can lead to phase-shift conflicts among shifters in the fabrication layout. An irresolvable conflict can be passed to the design process earlier than in a conventional processes, thereby saving valuable time in the fabrication process for printed circuits.

Abstract: A method of assigning phases to shifters on a layout is provided. The method includes creating a link between any two shifters within a predetermined distance from each other. In one embodiment, the predetermined distance is larger than a minimum feature size on the layout, and smaller than a combined minimum pitch and regulator width. A weight can be assigned to each created link. Phases can be assigned to the shifters, wherein if a phase-shift conflict exists on the layout, then one or more links can be broken based on their weight.

Abstract: Systems and methods for timing-driven shape closure in integrated circuit (“IC”) fabrication are provided. These Integrated Design-Manufacturing Processes (“IDMP”) include a delta flow that integrates information of the IC fabrication timing and geometry verification processes into the IC design. The delta flow is an incremental flow that includes delta-geometry timing prediction processes and/or delta-timing shape prediction processes for processing difference information associated with circuit characterization parameters. The delta flow independently re-characterizes an IC design using the difference or delta information corresponding to the circuit characterization parameters. The delta flow provides delta outputs (incremental) that enhance or re-characterize corresponding parameters of the devices and interconnect structures without the need to generate new circuit characterization parameters and without the need to re-process all information of the IC design.

Abstract: Systems and methods are provided for programming and running simulation engines of lithographic simulations on GPUs. This integration of lithographic simulations includes the hosting on one or more GPUs of any of a variety of lithographic techniques, including for example resolution enhancement technologies, optical proximity correction, optical rule-checking or lithography checking, and model-based DRC, where operations of one or more techniques are run in parallel. The systems and methods provided also include the integration of lithographic geometry operations into GPUs to obtain improved performance. Examples of this integration include a Design Rule Checker (DRC), parasitic extraction, and placement and route for example.

Abstract: A system and method of analyzing defects on a mask used in lithography are provided. A defect area image is provided as a first input, a set of lithography parameters is provided as a second input, and a set of metrology data is provided as a third input. The defect area image comprises an image of a portion of the mask. A simulated image can be generated in response to the first input. The simulated image comprises a simulation of an image that would be printed on a wafer if the wafer were exposed to a radiation source directed at the portion of the mask. The characteristics of the radiation source comprise the set of lithography parameters and the characteristics of the mask comprise the set of metrology data.

Abstract: A semiconductor layout testing and correction system is disclosed. The system combines both rule-based optical proximity correction and model-based optical proximity correction in order to test and correct semiconductor layouts. In a first embodiment, a semiconductor layout is first processed by a rule-based optical proximity correction system and then subsequently processed by a model-based optical proximity correction system. In another embodiment, the system first processes a semiconductor layout with a rule-based optical proximity correction system and then selectively processes difficult features using a model-based optical proximity correction system. In yet another embodiment, the system selectively processes the various features of a semiconductor layout using a rule-based optical proximity correction system or a model-based optical proximity correction system.

Abstract: A method for manufacturing integrated circuits using opaque field, phase shift masking. One embodiment of the invention includes using a two mask process. The first mask is an opaque-field phase shift mask and the second mask is a single phase structure mask. A phase shift window is aligned with the opaque field using a phase shift overlap area on the opaque field. The phase shift mask primarily defines regions requiring phase shifting. The single phase structure mask primarily defines regions not requiring phase shifting. The single phase structure mask also prevents the erasure of the phase shifting regions and prevents the creation of undesirable artifact regions that would otherwise be created by the phase shift mask.