Abstract: An NchMOS transistor Q71 on the input side of a current mirror 70 is made function as a voltage operating-point setting portion so that a pixel signal line potential (voltage of a horizontal signal line 20) would be constantly stable nearly at the GND. Then, an amplification factor and linearity become good in an amplification transistor in the solid imaging device 3. A current copier 90 is made function as a current sampling portion so as to receive a signal current IIN of the solid imaging device 3 through the current mirror 70 to carry out sampling of a pixel signal in a resetting period in the shape of current component as the pixel signal is. Calculating differential between a current component in a detecting period and an offset current, which is the current component in a resetting period in sampling, allows an offset component included in the pixel signal to be removed and only pure signal Isig to be picked up at an output terminal Iout, so that the FPN restraining function can be fulfilled.

Abstract: There is provided a solid-state imaging device, which includes: a comparator for sequentially comparing a predetermined level of an analog pixel signal obtained from a plurality of pixels with a reference signal which is gradually changed and used for converting the predetermined level into digital data; a counter for performing a count processing in parallel with a comparison processing for the predetermined level in the comparator, and holding a count value at a time of completing the comparison processing to obtain digital data indicative of a value obtained by adding the plurality of pixel signals; and an addition spatial position adjusting unit for controlling a selection operation for selecting spatial positions of the plurality of pixels to be processed in the comparator and a ratio of a weight value during the addition to adjust spatial positions of pixels after addition.

Abstract: An NchMOS transistor Q71 on the input side of a current mirror 70 is made function as a voltage operating-point setting portion so that a pixel signal line potential (voltage of a horizontal signal line 20) would be constantly stable nearly at the GND. Then, an amplification factor and linearity become good in an amplification transistor in the solid imaging device 3. A current copier 90 is made function as a current sampling portion so as to receive a signal current IIN of the solid imaging device 3 through the current mirror 70 to carry out sampling of a pixel signal in a resetting period in the shape of current component as the pixel signal is. Calculating differential between a current component in a detecting period and an offset current, which is the current component in a resetting period in sampling, allows an offset component included in the pixel signal to be removed and only pure signal Isig to be picked up at an output terminal Iout, so that the FPN restraining function can be fulfilled.

Abstract: An imaging apparatus includes a solid-state imaging device that outputs a captured image signal in current mode, which in turn is subjected to CDS processing in current mode by a current signal detector, thus suppressing FPN noise. A captured image signal output by the current signal detector is amplified by a programmable gain amplifier to a certain level, and the amplified signal is converted by a current-to-voltage transducer into a voltage signal. In a clamp circuit including a current-output differential amplifier and a current adder, the differential amplifier compares the voltage signal with a reference voltage from a reference voltage source and feeds back a clamp current to the current adder so that the difference between the voltage signal and the reference voltage becomes substantially zero. The current adder is required to simply add a signal current and the clamp current.

Abstract: A dc level control method for holding a dc level of a clamp portion in an electric signal to be a prescribed value is disclosed, wherein the method comprises the steps of: comparing a dc level of a sampling interval in said electric signal with a predetermined reference value to obtain a difference between said dc level and said reference value using an A/D converting section for dc level comparison which has a lower bit resolution than an A/D converting section for digital signal processing of said electric signal; and feeding back a clamp signal to said electric signal so that said obtained difference between said dc level and said reference value substantially becomes zero. This method is suitable for applying to a signal processing system for a solid state imaging apparatus.

Abstract: A dc level control method for holding a dc level of a clamp portion in an electric signal to be a prescribed value is disclosed, wherein the method comprises the steps of: comparing a dc level of a sampling interval in said electric signal with a predetermined reference value to obtain a difference between said dc level and said reference value using an A/D converting section for dc level comparison which has a lower bit resolution than an A/D converting section for digital signal processing of said electric signal; and feeding back a clamp signal to said electric signal so that said obtained difference between said dc level and said reference value substantially becomes zero. This method is suitable for applying to a signal processing system for a solid state imaging apparatus.

Abstract: A signal-processing method adapted to perform predetermined signal processing based on a unit signal transmitted from a semiconductor device that includes at least two unit components arranged in a predetermined order, where each of the unit components includes a detection unit configured to detect change information responsive to a change in an incident physical quantity and a unit-signal-generation unit configured to generate the unit signal based on the change information, and that detects the distribution of the physical quantity is provided. The signal-processing method includes the steps of externally transmitting operation information that can specify an operation state of the semiconductor device from the semiconductor device and performing the predetermined signal processing based on the unit signal by referring to the operation information in a signal-processing unit provided outside the semiconductor device.

Abstract: A solid-state image pickup apparatus and an image pickup method are disclosed which can detect and correct fixed pattern noise efficiently and accurately. Pickup image signals produced by reading out signals in parallel from a pixel sensor section are subject to an analog gain process, an A/D conversion process and a digital gain process. Within a period within which the pickup image signals which are based on a fixed value are inputted within a one-frame period, a reference signal average is produced from the signals. Sum values of difference values of the signals from the reference signal average are stored. Within a period within which the pickup image signals from valid pixels are inputted within the one-frame period, fixed pattern noise is removed from the pickup image signals using division averages obtained by dividing the stored sum values.

Abstract: An imaging apparatus includes a solid-state imaging device that outputs a captured image signal in current mode, which in turn is subjected to CDS processing in current mode by a current signal detector, thus suppressing FPN noise. A captured image signal output by the current signal detector is amplified by a programmable gain amplifier to a certain level, and the amplified signal is converted by a current-to-voltage transducer into a voltage signal. In a clamp circuit including a current-output differential amplifier and a current adder, the differential amplifier compares the voltage signal with a reference voltage from a reference voltage source and feeds back a clamp current to the current adder so that the difference between the voltage signal and the reference voltage becomes substantially zero. The current adder is required to simply add a signal current and the clamp current.

Abstract: A dc level control method for holding a dc level of a clamp portion in an electric signal to be a prescribed value is disclosed, wherein the method comprises the steps of: comparing a dc level of a sampling interval in said electric signal with a predetermined reference value to obtain a difference between said dc level and said reference value using an A/D converting section for dc level comparison which has a lower bit resolution than an A/D converting section for digital signal processing of said electric signal; and feeding back a clamp signal to said electric signal so that said obtained difference between said dc level and said reference value substantially becomes zero. This method is suitable for applying to a signal processing system for a solid state imaging apparatus.

Abstract: An NchMOS transistor Q71 on the input side of a current mirror 70 is made function as a voltage operating-point setting portion so that a pixel signal line potential (voltage of a horizontal signal line 20) would be constantly stable nearly at the GND. Then, an amplification factor and linearity become good in an amplification transistor in the solid imaging device 3. A current copier 90 is made function as a current sampling portion so as to receive a signal current IIN of the solid imaging device 3 through the current mirror 70 to carry out sampling of a pixel signal in a resetting period in the shape of current component as the pixel signal is. Calculating differential between a current component in a detecting period and an offset current, which is the current component in a resetting period in sampling, allows an offset component included in the pixel signal to be removed and only pure signal Isig to be picked up at an output terminal Iout, so that the FPN restraining function can be fulfilled.