Abstract: A method of inspecting a specimen, including: emitting a light from a lamp of a light source; illuminating a specimen on which plural patterns are formed with the light emitted from the light source and, passed through an objective lens; forming an optical image of the specimen by collecting light reflected from the specimen by the illuminating and passed through the objective lens and a image forming lens; detecting the optical image with a TDI image sensor; and processing a signal outputted from the TDI image sensor and detecting a defect of a pattern among the plural patterns formed on the specimen, wherein the image detected by the TDI image sensor is formed with light having a wavelength selected from the wavelengths of the light emitted from the light source.

Abstract: A glass mask used for patterning includes a plurality of glass plates superposed on one after another and a pattern formation layer formed on at least one of the glass plates. This structure makes it possible to suppress degradation in patterning precision due to warping of a photomask.

Abstract: An optical sensor that can receive light ranging from visible light to infrared light is provided. A thin beta-iron disilicide semiconductor film is formed on a silicon substrate. Light in the visible region is received by silicon, and light in the infrared region is received by beta-iron disilicide.

Abstract: A method and apparatus for sensing by a linear image sensor a two-dimensional image of an object to be sensed includes detecting a position of the object by a position sensor having a first resolution, picking up an image of the object being projected in a direction (V-scan direction) generally perpendicular to an internal scan (H-scan) direction of the linear image sensor in synchronism with relative movement between the object and the linear image sensor, periodically switching a pixel size along the V-scan direction between a plurality of predefined pixel sizes during the relative movement between the object and the linear image sensor in accordance with information of the relative movement detected by the position sensor, and producing from an output of the linear image sensor a two-dimensional image of the projected image having a second resolution of the object to be sensed. The second resolution is a higher resolution than the first resolution.

Abstract: A method of inspecting a specimen, including: emitting a light from a lamp of a light source; illuminating a specimen on which plural patterns are formed with the light emitted from the light source and, passed through an objective lens; forming an optical image of the specimen by collecting light reflected from the specimen by the illuminating and passed through the objective lens and a image forming lens; detecting the optical image with a TDI image sensor; and processing a signal outputted from the TDI image sensor and detecting a defect of a pattern among the plural patterns formed on the specimen, wherein the image detected by the TDI image sensor is formed with light having a wavelength selected from the wavelengths of the light emitted from the light source.

Abstract: A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution.

Abstract: A pattern detection method and apparatus for inspecting, with high resolution, a micro fine defect of a pattern on an inspected object, and a semiconductor substrate manufacturing method and system with a high yield. A micro fine pattern on the inspected object is inspected by annular-looped illumination through an objective lens onto a wafer, the wafer having micro fine patterns thereon. The illumination may be polarized and controlled according to an image detected on the pupil of the objective lens, and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect. Simultaneously, micro fine defects on the micro-fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect.

Abstract: In the air or in an inert gas atmosphere, powder raw materials are deposited on a flexible sheet for forming a film, an electrode, and a protective film under pressing a heating roller, and a device can be manufactured by continuous operations in which all the steps are integrated. There is provided a cheap device, by which the manhours for manufacturing a device is reduced, the throughput is improved in comparison with those of a previous device by which a film, an electrode, and a protective film have been manufactured on a crystal substrate in a vacuum.

Abstract: In the air or in an inert gas atmosphere, powder raw materials are deposited on a flexible sheet for forming a film, an electrode, and a protective film under pressing a heating roller, and a device can be manufactured by continuous operations in which all the steps are integrated. There is provided a cheap device, by which the manhours for manufacturing a device is reduced, the throughput is improved in comparison with those of a previous device by which a film, an electrode, and a protective film have been manufactured on a crystal substrate in a vacuum.

Abstract: An optical sensor that can receive light ranging from visible light to infrared light is provided. A thin beta-iron disilicide semiconductor film is formed on a silicon substrate. Light in the visible region is received by silicon, and light in the infrared region is received by beta-iron disilicide.

Abstract: A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution.

Abstract: A pattern inspection method and apparatus in which an image of a first pattern formed on a sample and an image of a second pattern formed on the sample is detected. At least one of the first pattern image and the second pattern image is converted to a gray level so as to be substantially the same with each other by linear combination including a gain and offset. A defect of the sample is detected by using the first pattern image and the second pattern image at least one of which has been converted to the gray level and a result of the detection is outputted to an external storage or processor by a communication arrangement.

Abstract: A method and apparatus for sensing by a linear image sensor a two-dimensional image of an object to be sensed includes detecting a position of the object by a position sensor having a first resolution, picking up an image of the object being projected in a direction (V-scan direction) generally perpendicular to an internal scan (H-scan) direction of the linear image sensor in synchronism with relative movement between the object and the linear image sensor, periodically switching a pixel size along the V-scan direction between a plurality of predefined pixel sizes during the relative movement between the object and the linear image sensor in accordance with information of the relative movement detected by the position sensor, and producing from an output of the linear image sensor a two-dimensional image of the projected image having a second resolution of the object to be sensed. The second resolution is a higher resolution than the first resolution.

Abstract: An image pickup device for sensing a two-dimensional (2D) image while causing a projected image of an object to be sensed being projected onto a linear image sensor to relatively move with respect to the linear image sensor in a direction (V scanning) perpendicular to the internal scan (H scan) direction of the linear image sensor. This device includes a position detector circuit that detects the position of the object to be sensed, and a pixel size modifier circuit for changing or modifying the setup configuration of a pixel size in the V scan direction of the linear image sensor on the basis of a position detection signal indicative of the position of the to-be-sensed object as detected by the position detector circuit. The pixel size modifier circuit is operable based on the object position detection signal to periodically change the interval of H-scanning start pulses of the linear image sensor.

Abstract: A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution.

Abstract: A pattern detection method and apparatus for inspecting, with high resolution, a micro fine defect of a pattern on an inspected object, and a semiconductor substrate manufacturing method and system with a high yield. A micro fine pattern on the inspected object is inspected by annular-looped illumination through an objective lens onto a wafer, the wafer having micro fine patterns thereon. The illumination may be polarized and controlled according to an image detected on the pupil of the objective lens, and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect. Simultaneously, micro fine defects on the micro-fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect.

Abstract: A pattern inspection method and apparatus in which an image of a first pattern formed on a sample and an image of a second pattern formed on the sample is detected. At least one of the first pattern image and the second pattern image is converted to a gray level so as to be substantially the same with each other by linear combination including a gain and offset. A defect of the sample is detected by using the first pattern image and the second pattern image at least one of which has been converted to the gray level and a result of the detection is outputted to an external storage or processor by a communication arrangement.

Abstract: A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution.

Abstract: A defect inspection method and apparatus therefor for a pattern to be inspected having a plurality of chips formed so as to be identical detect an image signal of a pattern to be inspected and when the image signal is to be compared with a detected image signal of an adjacent or separated pattern to be inspected on the substrate, convert the gray level so that the brightness of each of two image signals for comparing one or both of the detected image signals is almost identical in the local region by linear conversion having a gain and offset, and when a pattern is inspected using it, highly sensitive defect inspection for a pattern to be inspected for detecting a defect of a semiconductor wafer can be realized.