Abstract: This specification discloses an exposure mask, a method of designing and manufacturing an exposure mask, an exposure method and apparatus, a pattern forming method, and a device manufacturing method. Specifically, the exposure mask is adapted to expose an image forming layer provided on a substrate, by use of near field light leaking from adjoining openings formed in a light blocking member, wherein the light blocking film has an opening interval that is determined so that an electric field distribution at the image forming layer side of the opening to be defined as exposure light is projected on the light blocking member has a correlation with an eccentric model of electric field distribution as determined by a linewidth and a height of a pattern to be produced.

Abstract: A mask manufacturing method includes a first step of forming, on a workpiece substrate, a fine pattern on the basis of a pattern of a fine opening having a size of not more than a wavelength of exposure light by irradiating the workpiece substrate with the exposure light through a first mask provided with the fine opening and using near-field light leaking from the fine opening; and a second step of forming a second mask by processing the workpiece substrate on the basis of the fine pattern formed in the first step.

Abstract: Disclosed is a method of detecting an attraction force between substrates, and a near-field exposure method and apparatus, wherein, in the attraction force detecting method, an elastically deformable first substrate is intimately contacted to a second substrate which is not elastically deformable as compared with the first substrate and, when the first and second substrates so contacted are separated from each other, an attraction force acting between the first and second substrates is detected.

Abstract: There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist ? (?m?1) for the exposure light is such that 0.5???7.

Abstract: There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist ? (?m?1) for the exposure light is such that 0.5???7.

Abstract: A photomask for exposure to optical near-field has a micro-aperture and is adapted to expose an object of exposure to light by using light seeping out from the micro-aperture. The photomask also has periodically arranged recesses or projections so as to uniformize the optical near-field intensity distribution in the micro-aperture.

Abstract: A tightly adhering state between an elastically deformable first substrate deformed and made to tightly adhere to an elastically undeformable second substrate is detected by way of displacement of the light receiving position of a light receiving section adapted to receive light emitted from a light source for the first substrate and reflected by the first substrate.

Abstract: A near field light probe is capable of emanating a near field light having a sufficient intensity while allowing reduction of aperture size to improve resolution. The near field light probe can be incorporated in a near-field optical microscope, a near field light lithography apparatus, and a near field light storage apparatus. A near field light probe has a configuration in which a light-blocking film is formed with an aperture having slits surrounding the major opening. Light emitted from a light source is coupled into the probe from one side of the light-blocking film, the light being polarized in a predetermined direction with respect to the slits so that a near field light emanates from the major opening.

Abstract: Disclosed is an exposure method which includes the steps of closely contacting, to a workpiece, a mask having an opening formed with lengthwise directions extending in orthogonal directions, and projecting, onto the mask, exposure light being polarized in a direction other than the directions mentioned above.

Abstract: An exposure method for exposing a workpiece on the basis of near-field light escaping from an opening of a mask, wherein non-polarized exposure light from a light source is projected onto an exposure mask having a light blocking film and a plurality of rectangular openings formed in the light blocking film, the openings having a width in a widthwise direction not greater than one-third of the exposure light and having its lengthwise directions extending in two or more directions along the mask surface, so that near-field light escaping from the openings is produced thereby to perform exposure of a pattern on the basis of the openings.

Abstract: There is provided an exposure method including the steps for arranging an object to be exposed and a transparent plate that includes a thin film, within such a range that near field light from the thin film may operate on the object, the thin film having a light transmittance that changes according to an intensity of light of incidence, and exposing the object with the near field light generated by projecting a pattern on a mask onto the thin film of the transparent plate.

Abstract: A photolithography method using near-field light includes a step of controlling the position of an exposure mask and an object to be processed so as to make the object to be located in a region where near-field light is present, and a step of exposing the object to near-field light while controlling the intensity of such light as a function of the aperture density of the exposure mask. The intensity of near-field light is controlled by modifying the aperture width or modifying the transmissivity of the exposure mask depending on the aperture density.

Abstract: A near-field light exposure mask provided with a plurality of apertures each having a width small than the wavelength of light used for exposure. In the mask described above, among the plurality of apertures, apertures adjacent to each other are disposed at a necessary distance so that near-field light effused from one of the apertures adjacent to each other does not overlap that generated from the other aperture.

Abstract: A photomask for near-field light exposure includes a transparent substrate, and a shading member on the substrate, the shading member having a mask pattern including an aperture with a width not greater than the wavelength of light from a light source. The shading member has a thickness that provides a required light intensity right below the aperture in consideration of a relationship with the width of the aperture.

Abstract: Disclosed herein is a light modulating apparatus comprising first and second two periodic structures each having a period smaller than the wavelength of light emitted from a light source, and a moving means for relatively moving the two periodic structures, wherein the surface of the first periodic structure is brought near to the surface of the second periodic structure to a space not longer than the wavelength to arrange them in a state opposed to each other, the light incident on the first periodic structure is converted into near-field light by the first periodic structure, the converted near-field light is transmitted through the second periodic structure and converted into propagation light by scattering the near-field light on the back surface of the second periodic structure, and the intensity of the propagation light is modulated by relatively moving the two periodic structures by the moving means.

Abstract: A sensor device is formed from a metal film having a plurality of openings, a sensor material positioned within each of the openings, a light source that emits light having a first wavelength, and a light detector that detects light emitted from the light source and transmitted through or reflected from the openings. The plurality of openings are arranged periodically in a first direction in the metal film, and both a size of each of the plurality of openings and an interval thereof in the first direction are equal to or less than the wavelength of the light.

Abstract: Disclosed herein is a light modulating apparatus comprising first and second two periodic structures each having a period smaller than the wavelength of light emitted from a light source, and a moving means for relatively moving the two periodic structures, wherein the surface of the first periodic structure is brought near to the surface of the second periodic structure to a space not longer than the wavelength to arrange them in a state opposed to each other, the light incident on the first periodic structure is converted into near-field light by the first periodic structure, the converted near-field light is transmitted through the second periodic structure and converted into propagation light by scattering the near-field light on the back surface of the second periodic structure, and the intensity of the propagation light is modulated by relatively moving the two periodic structures by the moving means.

Abstract: There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist &agr; (&mgr;m−1) for the exposure light is such that 0.5≦&agr;≦7.

Abstract: A near field light probe is capable of emanating a near field light having a sufficient intensity while allowing reduction of aperture size to improve resolution. The near field light probe can be incorporated in a near-field optical microscope, a near field light lithography apparatus, and a near field light storage apparatus. A near field light probe has a configuration in which a light-blocking film is formed with an aperture having slits surrounding the major opening. Light emitted from a light source is coupled into the probe from one side of the light-blocking film, the light being polarized in a predetermined direction with respect to the slits so that a near field light emanates from the major opening.

Abstract: There is provided an exposure method including the steps for arranging an object to be exposed and a transparent plate that includes a thin film, within such a range that near field light from the thin film may operate on the object, the thin film having a light transmittance that changes according to an intensity of light of incidence, and exposing the object with the near field light generated by projecting a pattern on a mask onto the thin film of the transparent plate.