Abstract: An inductor including an element body containing metal magnetic powder and resin and having a coil conductor that has a winding portion, an extended portion extended from the winding portion, and an outer electrode connection portion leading to the extended portion and connected to an outer electrode and is embedded in the element body; and an element body coat covering a surface of the element body. The outer electrode is formed on a surface of the element body and connected to the outer electrode connection portion, in which the outer electrode connection portion has a region covered with the element body coat and a region connected to the outer electrode on the surface of the element body.

Abstract: A color measuring system includes a receiving section configured to receive designation of a color group including a plurality of colors, a determining section configured to determine whether a color measured by the color measuring section and a comparison target color in the color group coincide, and a control section configured to, when it is determined that the measured color and the comparison target color coincide, automatically advance a color measuring process to a color measuring process for performing the color measurement for a next color in the color group.

Abstract: Provided is a production method including a reception step of receiving a plurality of matters, a display step of displaying a list of the received matters, and a production step of producing a finished product by executing processing that includes a plurality of processes corresponding to the received matters, in which the production step executes processing of the matter of which the priority level is high, before executing unexecuted processing of the matter of which the priority level is low.

Abstract: [Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film. [Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

Abstract: A method of recondensing boil off gas includes receiving liquefied natural gas from a storage tank and increasing the pressure of the received liquefied natural gas to produce increased pressure liquefied natural gas. The method further includes receiving boil off gas from the storage tank at a gas inlet of an ejector, and receiving the increased pressure liquefied natural gas at a liquefied gas inlet of the ejector. The pressure of the increased pressure liquefied gas is used as a motive force to eject combined liquefied natural gas and boil off gas at a pressure greater than that of the boil off gas received at the gas inlet of the ejector. The method additionally includes increasing the pressure of the fluid ejected from the ejector to produce increased pressure ejected fluid.

Abstract: A film forming apparatus is provided for forming a film by revolving a substrate placed on a rotary table in a vacuum container, alternately supplying a precursor gas and a reaction gas that reacts with the precursor gas to generate a reaction product multiple times, and depositing the reaction product on the substrate. The film forming apparatus comprises a precursor gas supply region that supplies the precursor gas onto the substrate, one or more plasma generation regions that generate plasma at a position apart from the precursor gas supply region in a rotational direction of the rotary table, and a cleaning region that cleans the rotary table by supplying a cleaning gas onto the rotary table in a region apart from the plasma generation regions and the precursor gas supply region in the rotational direction when a film forming process is not performed on the substrate.

Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

Abstract: A film-forming method includes: mounting a substrate on a mounting table in a vacuu container; adsorbing a raw material to the substrate by supplying raw material gas containing silicon into the vacuum container; nitriding the raw material by supplying nitriding gas to a plasma formation region inside the vacuum container and supplying plasmarized gas to the substrate; forming a silicon-containing nitride film on the substrate by alternately and repeatedly performing the adsorbing a raw material and the nitriding the raw material; setting stress of the silicon-containing nitride film before the adsorbing a raw material and nitriding the raw material; and adjusting a nitriding time having a length based on first correspondence relationship between the stress of the silicon-containing nitride film and parameter corresponding to the nitriding time in the plasma formation region, and the set stress of the silicon-containing nitride film.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

Abstract: A film forming apparatus is provided for forming a film by revolving a substrate placed on a rotary table in a vacuum container, alternately supplying a precursor gas and a reaction gas that reacts with the precursor gas to generate a reaction product multiple times, and depositing the reaction product on the substrate. The film forming apparatus comprises a precursor gas supply region that supplies the precursor gas onto the substrate, one or more plasma generation regions that generate plasma at a position apart from the precursor gas supply region in a rotational direction of the rotary table, and a cleaning region that cleans the rotary table by supplying a cleaning gas onto the rotary table in a region apart from the plasma generation regions and the precursor gas supply region in the rotational direction when a film forming process is not performed on the substrate.

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: Provided is a plasma processing apparatus including: a rotary mounting table supported by a rotatory shaft arranged rotatably within a processing chamber and including multiple substrate placement units arranged side by side in a circumferential direction; a processing gas supplying section for supplying processing gas into the processing chamber; a plasma generating section wherein multiple microwave introducing mechanisms, each provided on the ceiling of the processing chamber so as to face the rotary mounting table and used for generating a plasma of the processing gas, are arranged in multiple rows spaced apart from each other from the inside of the movement path of the substrates when the rotary mounting table is rotated to the outside, each row of microwave introducing mechanisms being formed by arranging the microwave introducing mechanisms annularly side by side along the circumferential direction; and an exhaust unit that evacuates an inside of the processing chamber.

Abstract: A plasma processing apparatus of the present disclosure includes a processing container provided with an opening to carry an object to be processed (“workpiece”) into or out of a chamber adjacent to the processing container; a microwave introducing mechanism configured to introduce microwaves into the processing container; an exhaust device configured to evacuate the processing container; and a thermal insulating member provided between an outer surface of a gate valve that is provided near the opening and the chamber adjacent to the processing container. The thermal insulating member is coated with a conductive film at least on a surface of the thermal insulating member facing the outer surface of the gate valve, a surface of the thermal insulating member facing the chamber adjacent to the processing container, and a surface of the thermal insulating member exposed to outer air.

Abstract: A new and distinct cultivar of Tecoma plant named ‘Sunhorteaka’, characterized by its semi-upright plant habit; vigorous growth habit; early and freely flowering habit; flowering under high temperature conditions; orange red, vivid orange and vivid reddish yellow-colored flowers; and low temperature tolerance.

Abstract: A new and distinct cultivar of Tecoma plant named ‘Sunhorteki’, characterized by its semi-upright plant habit; vigorous growth habit; early and freely flowering habit; flowering under high temperature conditions; bright yellow-colored flowers; and low temperature tolerance.

Abstract: A new and distinct cultivar of Tecoma plant named ‘Sunhortedai’, characterized by its upright and relatively compact plant habit; vigorous growth habit; freely branching habit; early and freely flowering habit; flowering under high temperature conditions; greyed orange-colored flowers; and low temperature tolerant.