Abstract: A method of forming a semiconductor device including a fin field effect transistor (FinFET), the method includes forming a first sacrificial layer over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is patterned, thereby forming an opening. A first liner layer is formed on the isolation insulating layer in a bottom of the opening and on at least side faces of the patterned first sacrificial layer. After the first liner layer is formed, forming a dielectric layer in the opening. After the dielectric layer is formed, removing the patterned first sacrificial layer, thereby forming a contact opening over the source/drain structure. A conductive layer is formed in the contact opening. The FinFET is an n-type FET, and the source/drain structure includes an epitaxial layer made of Si1-y-a-bGeaSnbM2y, wherein 0<a, 0<b, 0.01?(a+b)?0.1, 0.01?y?0.1, and M2 is P or As.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

Abstract: A method of forming a semiconductor device comprises forming a fin structure; forming a source/drain structure in the fin structure; and forming a gate electrode over the fin structure. The source/drain structure includes Si?x?yM1xM2y, where M1 includes Sn, M2 is one or more of P and As, 0.01?x?0.1, and 0.01?y?0.

Abstract: In an embodiment, a device includes: a semiconductor substrate having a channel region; a gate stack over the channel region; and an epitaxial source/drain region adjacent the gate stack, the epitaxial source/drain region including: a main portion in the semiconductor substrate, the main portion including a semiconductor material doped with gallium, a first concentration of gallium in the main portion being less than the solid solubility of gallium in the semiconductor material; and a finishing portion over the main portion, the finishing portion doped with gallium, a second concentration of gallium in the finishing portion being greater than the solid solubility of gallium in the semiconductor material.

Abstract: A method of forming a semiconductor device including a fin field effect transistor (FinFET) includes forming a first sacrificial layer over a source/drain structure of a FinFET structure and an isolation insulating layer. The first sacrificial layer is patterned, thereby forming an opening. A first liner layer is formed on the isolation insulating layer in a bottom of the opening and on at least side faces of the patterned first sacrificial layer. After the first liner layer is formed, forming a dielectric layer in the opening. After the dielectric layer is formed, removing the patterned first sacrificial layer, thereby forming a contact opening over the source/drain structure. A conductive layer is formed in the contact opening. The FinFET is an n-type FET, and the source/drain structure includes an epitaxial layer including Si1?x?yM1xM2y, where M1 includes Sn, M2 is one or more of P and As, and 0.01?x?0.1, and 0.01?y?0.1.

Abstract: In an embodiment, a device includes: a semiconductor substrate having a channel region; a gate stack over the channel region; and an epitaxial source/drain region adjacent the gate stack, the epitaxial source/drain region including: a main portion in the semiconductor substrate, the main portion including a semiconductor material doped with gallium, a first concentration of gallium in the main portion being less than the solid solubility of gallium in the semiconductor material; and a finishing portion over the main portion, the finishing portion doped with gallium, a second concentration of gallium in the finishing portion being greater than the solid solubility of gallium in the semiconductor material.

Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

Abstract: A semiconductor device includes first and second epitaxial structures, first and second top metal alloy layers, and first and second bottom metal alloy layers. The first and second epitaxial structures have different cross sections. The first and second top metal alloy layers are respectively in contact with the first and second epitaxial structures. The first and second bottom metal alloy layers are respectively in contact with the first and second epitaxial structures and respectively under the first and second top metal alloy layers. The first top metal alloy layer and the first bottom metal alloy layer are made of different materials.

Abstract: Semiconductor structures and method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a source/drain structure formed adjacent to the gate structure in the substrate and a contact formed over the source/drain structure. The semiconductor structure further includes a metal-containing layer formed over the contact and a dielectric layer covering the gate structure and the metal-containing layer. The semiconductor structure further includes a first conductive structure formed through dielectric layer and the metal-containing layer and landing on the contact. In addition, a bottom surface of the metal-containing layer is higher than a top surface of the gate structure.

Abstract: Embodiments described herein relate generally to one or more methods for forming an interconnect structure, such as a dual damascene interconnect structure comprising a conductive line and a conductive via, and structures formed thereby. In some embodiments, an interconnect opening is formed through one or more dielectric layers over a semiconductor substrate. The interconnect opening has a via opening and a trench over the via opening. A conductive via is formed in the via opening. A nucleation enhancement treatment is performed on one or more exposed dielectric surfaces of the trench. A conductive line is formed in the trench on the one or more exposed dielectric surfaces of the trench and on the conductive via.

Abstract: A method for forming an epitaxial source/drain structure in a semiconductor device includes providing a substrate having a plurality of fins extending from the substrate. In some embodiments, a liner layer is formed over the plurality of fins. The liner layer is patterned to expose a first group of fins of the plurality of fins in a first region. In some embodiments, a first epitaxial layer is formed over the exposed first group of fins and a barrier layer is formed over the first epitaxial layer. Thereafter, the patterned liner layer may be removed. In various examples, a second epitaxial layer is selectively formed over a second group of fins of the plurality of fins in a second region.

Abstract: A method of forming a semiconductor device includes forming a source/drain region on a substrate, depositing a metal-rich metal silicide layer on the source/drain region, depositing a silicon-rich metal silicide layer on the metal-rich metal silicide layer, and forming a contact plug on the silicon-rich metal silicide layer. This disclosure also describes a semiconductor device including a fin structure on a substrate, a source/drain region on the fin structure, a metal-rich metal silicide layer on the source/drain region, a silicon-rich metal silicide layer on the metal-rich metal silicide layer, and a contact plug on the silicon-rich metal silicide layer.

Abstract: A semiconductor structure includes a substrate, a first silicide, and a second silicide. The substrate has a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type. The first silicide is on the first epitaxy region, the first silicide comprising a first metal and a second metal, and the second silicide is on the second epitaxy region. A work function of the first silicide is greater than a work function of the second silicide.

Abstract: A method of forming a memory circuit includes generating a layout design of the memory circuit, and manufacturing the memory circuit based on the layout design. The memory circuit is a four transistor memory cell that includes at least the first pass gate transistor and the first pull up transistor. The generating of the layout design includes generating a first active region layout pattern corresponding to fabricating a first active region of a first pull up transistor, generating a second active region layout pattern corresponding to fabricating a second active region of a first pass gate transistor, and generating a first metal contact layout pattern corresponding to fabricating a first metal contact is electrically coupled to a source of the first pull up transistor. The first metal contact layout pattern extends in a second direction, overlaps a cell boundary of the memory circuit and the first active region layout pattern.

Abstract: A semiconductor device includes a semiconductive substrate, a semiconductive fin, an isolation structure, a source/drain epitaxial structure, a first cap layer, and a second cap layer. The semiconductive fin protrudes from the semiconductive substrate. The isolation structure is over the semiconductive substrate and laterally surrounds the semiconductive fin. The source/drain epitaxial structure is over the semiconductive fin. The source/drain epitaxial structure has a rounded corner extending laterally and a top above the rounded corner. The first cap layer extends from the rounded corner of the source/drain epitaxial structure to the top of the source/drain epitaxial structure. The second cap layer covers the rounded corner and a bottom of the source/drain epitaxial structure. The first and second cap layers are made of different materials.

Abstract: A first dielectric layer is selectively formed such that the first dielectric layer is formed over a source/drain region of a first type of transistor but not over a source/drain region of a second type of transistor. The first type of transistor and the second type of transistor have different types of conductivity. A first silicide layer is selectively formed such that the first silicide layer is formed over the source/drain region of the second type of transistor but not over the source/drain region of the first type of transistor. The first dielectric layer is removed. A second silicide layer is formed over the source/drain region of the first type of transistor.

Abstract: A semiconductor device according to the present disclosure includes a substrate including a plurality of atomic steps that propagate along a first direction, and a transistor disposed on the substrate. The transistor includes a channel member extending a second direction perpendicular to the first direction, and a gate structure wrapping around the channel member.

Abstract: A method for reducing stress induced defects in heterogeneous epitaxial interfaces of a semiconductor device is disclosed. The method includes forming a fin structure with a fin base, a superlattice structure on the fin base, forming a polysilicon gate structure on the fin structure, forming a source/drain (S/D) opening within a portion of the fin structure uncovered by the polysilicon gate structure, modifying the first surfaces of the first layers to curve a profile of the first surfaces, depositing first, second, and third passivation layers on the first, second, and third surfaces, respectively, forming an epitaxial S/D region within the S/D opening, and replacing the polysilicon gate structure with a metal gate structure. The superlattice structure includes first and second layers with first and second lattice constants, respectively, and the first and second lattice constants are different from each other.

Abstract: A method includes removing a dummy gate stack to form an opening between gate spacers, selectively forming an inhibitor film on sidewalls of the gate spacers, with the sidewalls of the gate spacers facing the opening, and selectively forming a dielectric layer over a surface of a semiconductor region. The inhibitor film inhibits growth of the dielectric layer on the inhibitor film. The method further includes removing the inhibitor film, and forming a replacement gate electrode in a remaining portion of the opening.

Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.