Abstract: (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.

Abstract: (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.

Abstract: Provided is a variable valve operating apparatus for an internal combustion engine, which can favorably reduce electric power consumption in a vehicle system that may stop the internal combustion engine during power-up of the vehicle system. A changeover mechanism 90 is provided which is capable of switching between a connection state in which a first rocker arm 96 and a second rocker arm 98 are in connection with each other via a changeover pin 112, 118 and a disconnection state in which the connection is released. The changeover mechanism 90 performs energization of actuators 130 for each cylinder in a case in which fuel supply to the internal combustion engine 12 is stopped in response to an establishment of a predetermined stop condition.

Abstract: Provided is a control apparatus for an internal combustion engine that can favorably achieve compatibility between suppressing deterioration of a catalyst and suppressing progression of rich poisoning thereof when the internal combustion engine has a configuration that performs valve stopping control during a fuel-cut operation. Variable valve operating apparatuses are provided having valve stop mechanisms that can respectively change an operating state of an intake valve and an exhaust valve between a valve operating state and a closed-valve stopped state. When an integrated fuel injection amount is equal to or greater than a predetermined value ? when executing a fuel-cut operation, it is determined that rich poisoning of an upstream catalyst is in a progressed state. In that case, valve stopping control of the intake and exhaust valves is prohibited to thereby supply oxygen to the upstream catalyst.

Abstract: A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.

Abstract: (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.

Abstract: (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.

Abstract: A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.

Abstract: A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides.

Abstract: Provided is a variable valve operating apparatus for an internal combustion engine, which can favorably reduce electric power consumption in a vehicle system that may stop the internal combustion engine during power-up of the vehicle system. A changeover mechanism 90 is provided which is capable of switching between a connection state in which a first rocker arm 96 and a second rocker arm 98 are in connection with each other via a changeover pin 112, 118 and a disconnection state in which the connection is released. The changeover mechanism 90 performs energization of actuators 130 for each cylinder in a case in which fuel supply to the internal combustion engine 12 is stopped in response to an establishment of a predetermined stop condition.

Abstract: There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.

Abstract: A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides.

Abstract: A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.

Abstract: There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.

Abstract: In an automotive floor panel assembly (1) comprising a floor panel (1M) stamp-formed of sheet metal and including a longitudinal floor tunnel (2) extending longitudinally in a laterally central part of the floor panel and a lateral floor tunnel (3) extending laterally across the longitudinal floor tunnel, a first reinforcement member (7), which may have a stepped cross section, attached to and extending along a front surface of a front wall (1fw) of the lateral floor tunnel so as to define a closed cross section jointly with the front wall of the lateral floor tunnel. Thereby, a closed cross section is defined jointly by the first reinforcement member and the front wall of the lateral floor tunnel immediately under the front end of the front seats (4) so that the floor panel can be favorably reinforced without limiting the leg rooms of the vehicle occupants of the front seats and without interfering with the space for receiving the fuel tank (10).

Abstract: In an automotive floor panel assembly (1) comprising a floor panel (1M) stamp-formed of sheet metal and including a longitudinal floor tunnel (2) extending longitudinally in a laterally central part of the floor panel and a lateral floor tunnel (3) extending laterally across the longitudinal floor tunnel, a first reinforcement member (7), which may have a stepped cross section, attached to and extending along a front surface of a front wall (1fw) of the lateral floor tunnel so as to define a closed cross section jointly with the front wall of the lateral floor tunnel. Thereby, a closed cross section is defined jointly by the first reinforcement member and the front wall of the lateral floor tunnel immediately under the front end of the front seats (4) so that the floor panel can be favorably reinforced without limiting the leg rooms of the vehicle occupants of the front seats and without interfering with the space for receiving the fuel tank (10).

Abstract: A device for fixing a flat tire (30) in an automobile which has an accommodating space (5) behind a bucket seat (1) in which the bucket seat is accommodated which has been folded, comprises: a flat tire fixing threaded member (34); a vehicle body screw hole (20) which is located near the front edge of the accommodating space (5), and is threadably engaged with the threaded member (34); and a bracket (40) which has a first screw hole (42) which is threadably engaged with the vehicle body screw hole (20), and a second screw hole (44a) with which the flat tire fixing threaded member (34) is threadably engaged. In the case where the bucket seat is folded and accommodated, with the vehicle body screw hole 20 set in alignment with one of the bolt holes of the flat tire (30) the latter (30) is fixedly secured to the vehicle body screw hole (20) by means of the threaded member (34).

Abstract: An upper cross member and a lower cross member are formed integrally together to include a cross member having the shape of a box in cross section, and to the front and rear sides thereof are joined floor panels of an automobile. A trunk room or storage space is formed between right and left side frames to which are joined both ends of the cross member. A lid for opening and closing an opening located in space between a front seat and a center seat of the automobile is pivotally supported by the cross member that forms a portion of the upper wall of the trunk room. The lid is normally locked to the floor panel by a locking mechanism having a grip. The lid when opened is maintained at its open position by anchoring a hook attached to an end of a wire to an engaging portion provided at the back of the front seat.

Abstract: In a hybrid vehicle, there is a shock in a transient period when a driving condition of an internal combustion engine is shifted from a loaded driving state for power generation, in which a load is applied to the internal combustion engine by a motor generator, to a non-loaded driving state for idling or motoring, in which no load is applied to the internal combustion engine. A hybrid power output apparatus of the present invention, in which the motor generator is mechanically linked with the internal combustion engine, prevents an abrupt change in output torque from the motor generator in the transient period from the loaded driving state to the non-loaded driving state. One procedure to attain this object sets the minimum revolving speed of the internal combustion engine in the loaded driving state to be greater than the revolving speed in the non-loaded driving state by approximately 200 rpm.