Abstract: An object of the present invention is to provide an electric actuator having a structure capable of reducing an external force or impact acting on an screw shaft when a piston rod is at a stretched position. An electric actuator 1 includes a nut 5, a piston rod 4, recesses 6, keys 7, holes 8, an a tapered portion 9. Into the nut 5, a screw shaft 3 is screwed. The piston rod 4 moves linearly via the nut 5. The recesses 6 are formed on an outer circumferential surface of the nut 5. The keys 7 are each provided to a recess 6. The tapered portion 9 is formed on an inner wall of the cylinder body 2. The piston rod 4 advances to move the keys 7 outward to cause the keys 7 to fit to the tapered portion 9 to block retraction of the piston rod 4.

Abstract: It has been found that an organic component is emitted from a member such as a crucible or a gasket constituting an apparatus for vacuum treatment and an element is contaminated with said organic component emitted, and, as a result, members of the apparatus for vacuum treatment are subjected to a treatment for reducing the emission of an organic component. For example, a crucible is made from a material having a reduced catalytic activity to a material for use in the vapor deposition in question and a gasket is used after a treatment for reducing the bleeding of an organic component or is made from a material containing a reduced amount of an organic component.

Abstract: In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

Abstract: There is provided a substrate support device capable of preventing powder dust from being produced. A thermoconductive intermediate member is interposed between a base table and a substrate support table and has a communication aperture path for communicating the aperture path of the base table with the aperture path of the substrate support table. An elastic member such as bellows tube is disposed in the communication aperture path of the thermoconductive intermediate member, for insulating the thermoconductive intermediate member from the inert gas which flows through the communication aperture path.

Abstract: As a shape on a cross-section vertical to a longitudinal direction (L) of the hot cathode fluorescent lamp (20a (20b)), a light source rear side reflecting plane (62) of a reflector (60) includes a mound portion (623). The mound portion (623) is defined by two recessed inclining planes and protrudes toward a hot cathode fluorescent lamp (20a (20b)).

Abstract: A space necessary to install an exhaust pump and a driving portion for a gate valve is reduced to make an entire apparatus compact. A vacuum processing apparatus includes a vacuum chamber, an exhaust pump communicating with the exhaust port of the vacuum chamber, and a gate valve having a valve body which moves in a direction to come close to and separate from the exhaust port and opens/closes the exhaust port. The vacuum chamber is provided with a connecting portion extending from the exhaust port in a direction inclined from the moving direction of the valve body. The connecting portion is connected to the exhaust pump. The gate valve includes the valve body arranged in the vacuum chamber, and a driving portion having a rod which extends in the moving direction of the valve body and drives the valve body. The driving portion is arranged outside the connecting portion.

Abstract: A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.

Abstract: A heating device which can prevent unused active chemical species from attaching to the bodies of various vacuum devices or depositing on the inner wall of their exhaust pipes to thereby be able to make the size of exhaust pipes smaller than before and make the exhaust pipe maintenance easier. The heating device comprises a heat resisting vacuum insulator (4) wound around the outer periphery of an electric heater (3) disposed along the outer wall of an exhaust pipe (1), wherein the electric heater (3) has a resistance heating element and a heat resisting electric insulator covering this resistance heating element, and the heat resisting vacuum insulator (4) comprises a hollow platy covering material air-tightly sealed thereinside by a metal seat (5) having a heat resisting temperature of at least 100° C., and a fibrous or granular filling material (6) filled in the hollow portion of this covering material and having a heat resisting temperature of at least 100° C.

Abstract: Method for producing at low cost bellows which show high durability even when used in a quite reactive atmosphere. A method for manufacturing bellows includes the steps of: I: forming an untreated bellows from a flat base plate, the base plate including 15 to 30 wt % of Cr, 5 to 40 wt % of Ni, 0.9 to 6 wt % of Al, less than 1 wt % of Mo, less than 0.1 wt % of Mn, less than 0.1 wt % of C, less than 0.1 wt % of S, less than 0.1 wt % of P and a balance of Fe and an unavoidable impurity (relative to 100 wt % of the base plate); and II: heating the untreated bellows at a temperature of 750 to 895° C. in an atmosphere which contains water and hydrogen and in which the volume ratio of hydrogen to water (H2/H2O) is in the range of 2×103 to 1×1012, thereby forming an Al2O3 passivation film on a surface of the untreated bellows.

Abstract: Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1? thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200 ?m thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film.

Abstract: A large liquid crystal display (100) comprises a light guide plate (3) arranged on the back side of a liquid crystal panel (1). The front surface of the light guide plate (3) is flat, while the back surface thereof is concave. The upper and lower end faces of the light guide plate (3) respectively facing hot cathode fluorescent lamps (2a, 2b) have a convex shape projecting toward the respective lamps. White light from the fluorescent lamps is incident on the upper and lower end faces of the light guide plate directly or by being reflected by reflectors (4a, 4b), and propagates within the light guide plate while being reflected by the front and back surfaces of the light guide plate. At the front surface of the light guide plate, a part of the white light is directed toward the back side of the liquid crystal panel (1) by a light guide portion (5).

Abstract: A cold cathode fluorescent tube where an electron emitting electrode is sealed in shows much deterioration in the luminance with time, thereby being not adequate for a long time use. The electrode emitting electrode is formed in such a shape that an electric field is not locally concentrated. By mixing a material of high heat conductivity, such as tungsten, as the material for the electron emitting electrode or using helium of high heat conductivity as the sealing gas, a long life of the cold cathode fluorescent tube is achieved.

Abstract: A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

Abstract: A low-compression force metal gasket includes a coating layer containing a polymer material on at least a sealing surface of the gasket, and the coating layer satisfies the following conditions (1) to (3): (1) the layer comprises a resin, a rubber or a mixture thereof having an oxygen gas permeability coefficient at 25° C. of 10×10?12 to 0.1×10?12 (m2/s); (2) when the layer is compression deformed, the storage elastic modulus (E?) at 200° C. is in the range of 1.0×107 to 1.0×102 Pa; and (3) the coating layer has a thickness of 1 to 40 ?m. The gasket provides a high seal at a low clamping force.

Abstract: In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

Abstract: In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

Abstract: Disclosed is a fluorescent lamp having a phosphor layer formed on the inner wall of a lamp tube. The average particle size of the phosphors used in the phosphor layer is not more than 1 ?m, and the thickness of the phosphor layer is not more than 5 ?m. By having such a constitution, the ultraviolet light having a wavelength of 254 nm which is emitted from mercury sealed within the lamp tube can be efficiently converted into visible light and the visible light can be efficiently discharged outside the lamp tube.

Abstract: The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.

Abstract: An apparatus for producing a gas using a raw material gas having high reactivity, in particular, a fluorinated hydrocarbon, or a vessel for supplying the gas, characterized in that the surface of a portion thereof contacting with the gas has an average roughness of 1 ?m or less in terms of a center line average roughness Ra. It is preferred that an oxide-based passivated film such as a film based on chromium oxide, aluminum oxide, yttrium oxide, magnesium oxide or the like is formed on the surface having a roughness controlled as above. The above apparatus and vessel can be suitably used for preventing the contamination of a raw material gas originated from a gas production apparatus or a vessel for supplying the gas.

Abstract: It has been found that an organic component is emitted from a member such as a crucible or a gasket constituting an apparatus for vacuum treatment and an element is contaminated with said organic component emitted, and, as a result, members of the apparatus for vacuum treatment are subjected to a treatment for reducing the emission of an organic component. For example, a crucible is made from a material having a reduced catalytic activity to a material for use in the vapor deposition in question and a gasket is used after a treatment for reducing the bleeding of an organic component or is made from a material containing a reduced amount of an organic component.