Abstract: The invention relates to a camshaft adjustment device for changing an angular position of a camshaft relative to a crankshaft of an internal combustion engine. The device comprising an actuator, the actuator having a housing flange, fastening means to lock the housing flange to a housing. A latching section is formed on the housing, and a locking section, which comes to bear axially on the latching section, is formed on the housing flange. The fastening means comprises at least two fastening clips for connecting the housing to the housing flange in a frictional and interlocking manner. Each fastening clip has a first leg with a first latching contour and a second leg with a second latching contour. The first latching contour bears against a latching groove in the latching section, and the second latching contour bears against a latching groove in the locking section.

Abstract: A semiconductor device is disclosed including a stack of wafers having a densely configured 3D array of memory die. The memory die on each wafer may be arranged in clusters, with each cluster including an optical module providing an optical interconnection for the transfer of data to and from each cluster.

Abstract: Provided are techniques that may include a disposable magnetic cell isolation holder having one or more passages that accommodate a magnetic retention material to facilitate magnetic cell isolation without adjustment of magnetic field parameters between isolation procedures using different magnetic particle sizes. When the magnetic cell isolation holder is coupled to a magnetic field generator, a first passage corresponding to a smaller particle size is positioned in a magnetic field where the magnetic field characteristics are different relative to a second passage, of a second holder or in the same holder, for use with another bead size.

Abstract: A semiconductor device including control switches enabling a semiconductor die in a stack of semiconductor die to send or receive a signal, while electrically isolating the remaining die in the die stack. Parasitic pin cap is reduced or avoided by electrically isolating the non-enabled semiconductor die in the die stack.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: A quench protection apparatus includes a number N of superconducting coils and a heater matrix. The number N of superconducting coils are electrically coupled in series. The heater matrix module includes the number N of heater units. The number N of heater units is electrically coupled in parallel with the number N of superconducting coils respectively. A number M of the heater units each includes at least the number N of heaters. Each superconducting coil is thermally coupled with at least one heater of each of the number M of the heater units. The number of N-M of the heater units each includes at least one heater. Each of the number M of superconducting coils correspondingly coupled with the number M of the heater units is thermally coupled with at least one heater of each of the number N-M of the heater units. A superconducting magnet system protected by above quench protection apparatus is also provided.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI The device includes a substrate (202), one or more semiconductor die (224,225), and molding compound around the one or more semiconductor die (224,225). The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer (210) on the substrate (202). The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: In embodiments of the invention, a superconductor lead is configured to have less ohmic heating by its own current and less heat conduction from room temperature to cryogenic temperature, where a cryogenic apparatus is located. The superconducting lead with no ohmic resistance and low thermal conductivity disclosed herein maximizes current capacity by placing superconductors in parallel, each having equal current. Thus, the resistances are controlled to provide uniform current distribution through each superconductor of the high temperature superconducting (HTS) lead.

Abstract: A superconducting magnet system includes a coil support structure, superconducting coils, and electrically and thermally conductive windings. The superconducting coils and the conductive windings are supported by the coil support structure. Each conductive winding is electromagnetically coupled with a corresponding superconducting coil. Each conductive winding is electrically shorted.

Abstract: A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.

Abstract: A superconducting magnet system includes a coil support structure, superconducting coils, and electrically and thermally conductive windings. The superconducting coils and the conductive windings are supported by the coil support structure. Each conductive winding is electromagnetically coupled with a corresponding superconducting coil. Each conductive winding is electrically shorted.

Abstract: A superconducting magnet system includes a coil support structure, superconducting coils, and electrically and thermally conductive windings. The superconducting coils and the conductive windings are supported by the coil support structure. Each conductive winding is electromagnetically coupled with a corresponding superconducting coil. Each conductive winding is electrically shorted.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI The device includes a substrate (202), one or more semiconductor die (224,225), and molding compound around the one or more semiconductor die (224,225). The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer (210) on the substrate (202). The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.

Abstract: A superconducting magnet system includes a coil support structure, superconducting coils, and electrically and thermally conductive windings. The superconducting coils and the conductive windings are supported by the coil support structure. Each conductive winding is electromagnetically coupled with a corresponding superconducting coil. Each conductive winding is electrically shorted.