Patents by Inventor Yeh-Chieh Wang
Yeh-Chieh Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11940828Abstract: A voltage tracking circuit is provided. The voltage tracking circuit includes first and second P-type transistors and a control circuit. The drain of the first P-type transistor is coupled to a first voltage terminal. The gate and the drain of the second P-type transistor are respectively coupled to the first voltage terminal and a second voltage terminal. The control circuit is coupled to the first and second voltage terminals and generates a control voltage according to the first voltage and the second voltage. The sources of the first and second P-type transistors are coupled to an output terminal of the voltage tracking circuit, and the output voltage is generated at the output terminal. In response to the second voltage being higher than the first voltage, the control circuit generates the control signal to turn off the first P-type transistor.Type: GrantFiled: August 17, 2022Date of Patent: March 26, 2024Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Shao-Chang Huang, Yeh-Ning Jou, Ching-Ho Li, Kai-Chieh Hsu, Chun-Chih Chen, Chien-Wei Wang, Gong-Kai Lin, Li-Fan Chen
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Publication number: 20240030045Abstract: A method of curing or otherwise processing semiconductor wafers in an environmentally controlled process chamber includes: loading a plurality of semiconductor wafers into the process chamber such that pairs of adjacent semiconductor wafers are spaced apart from one another by gaps therebetween; introducing a process gas into the process chamber containing the plurality of semiconductor wafers; and drawing gas from the process chamber through one or more exhaust manifolds. Suitably, each exhaust manifold includes a plurality of inlet orifices through which gas is drawn into the exhaust manifold, at least one of the inlet orifices facing and aligning with each of the gaps.Type: ApplicationFiled: July 19, 2022Publication date: January 25, 2024Inventors: Sung-Ju Huang, Kuang-Wei Cheng, Yeh-Chieh Wang
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Patent number: 11875973Abstract: Methods for preparing a void-free protective coating are disclosed herein. The void-free protective coating is used on a dielectric window having a central hole, which is used in a plasma treatment tool. A first protective coating layer is applied to the window, leaving an uncoated annular retreat area around the central hole. The first protective coating layer is polished to produce a flat surface and fill in any voids on the window. A second protective coating layer is then applied upon the flat surface of the first protective coating layer to obtain the void-free coating. This increases process uptime and service lifetime of the dielectric window and the plasma treatment tool.Type: GrantFiled: February 8, 2022Date of Patent: January 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Tsung Chen, Tsung-Cheng Ho, Chien-Yu Wang, Yen-Shih Wang, Jiun-Rong Pai, Yeh-Chieh Wang
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Publication number: 20230367339Abstract: Methods for preparing a void-free protective coating are disclosed herein. The void-free protective coating is used on a dielectric window having a central hole, which is used in a plasma treatment tool. A first protective coating layer is applied to the window, leaving an uncoated annular retreat area around the central hole. The first protective coating layer is polished to produce a flat surface and fill in any voids on the window. A second protective coating layer is then applied upon the flat surface of the first protective coating layer to obtain the void-free coating. This increases process uptime and service lifetime of the dielectric window and the plasma treatment tool.Type: ApplicationFiled: July 26, 2023Publication date: November 16, 2023Inventors: Shih-Tsung Chen, Yeh-Chieh Wang, Yen-Shih Wang, Chien-Yu Wang, Jiun-Rng Pai, Tsung-Cheng Ho
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Patent number: 11768439Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.Type: GrantFiled: August 16, 2021Date of Patent: September 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wolf Hung, Chung-Nan Chen, Hong-Hsing Chou, Chao-Li Shih, Yeh-Chieh Wang
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Publication number: 20230025296Abstract: Methods for preparing a void-free protective coating are disclosed herein. The void-free protective coating is used on a dielectric window having a central hole, which is used in a plasma treatment tool. A first protective coating layer is applied to the window, leaving an uncoated annular retreat area around the central hole. The first protective coating layer is polished to produce a flat surface and fill in any voids on the window. A second protective coating layer is then applied upon the flat surface of the first protective coating layer to obtain the void-free coating. This increases process uptime and service lifetime of the dielectric window and the plasma treatment tool.Type: ApplicationFiled: February 8, 2022Publication date: January 26, 2023Inventors: Shih-Tsung Chen, Tsung-Cheng Ho, Chien-Yu Wang, Yen-Shih Wang, Jiun-Rong Pai, Yeh-Chieh Wang
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Publication number: 20210373442Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.Type: ApplicationFiled: August 16, 2021Publication date: December 2, 2021Inventors: Wolf Hung, Chung-Nan Chen, Hong-Hsing Chou, Chao-Li Shih, Yeh-Chieh Wang
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Patent number: 11092898Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.Type: GrantFiled: December 4, 2017Date of Patent: August 17, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wolf Hung, Chung-Nan Chen, Hong-Hsing Chou, Jaw-Lih Shih, Yeh-Chieh Wang
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Patent number: 10020182Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The first and second sensors may communicate the parameters using different and incompatible protocols. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.Type: GrantFiled: March 17, 2014Date of Patent: July 10, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsu-Shui Liu, Yeh-Chieh Wang, Jiun-Rong Pai, Pei-Nung Chen
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Patent number: 9970105Abstract: Embodiments of method for cooling a wafer are provided. A method for cooling a wafer includes placing the wafer in a processing module via a passage of a seat member. The method also includes moving a closure member toward the seat member in a diagonal manner. The method further includes engaging the seat member and the closure member and placing a portion of the closure member inside the passage. In addition, the method includes performing a process on the wafer in the processing module.Type: GrantFiled: December 23, 2013Date of Patent: May 15, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Chun-Ta Chen, Cheng-Chieh Chen, Hong-Hsing Chou, Yeh-Chieh Wang, Jeng-Yann Tsay, Shyue-Shin Tsai, Tsung-Yang Liu
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Publication number: 20180101101Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.Type: ApplicationFiled: December 4, 2017Publication date: April 12, 2018Inventors: Wolf Hung, Chung-Nan Chen, Hong-Hsing Chou, Chao-Li Shih, Yeh-Chieh Wang
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Patent number: 9835952Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.Type: GrantFiled: June 27, 2013Date of Patent: December 5, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wolf Hung, Chung-Nan Chen, Jaw-Lih Shih, Hong-Hsing Chou, Yeh-Chieh Wang
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Patent number: 9786539Abstract: A wafer chuck is provided. The wafer chuck includes a main body and a dielectric layer disposed over the main body. The wafer chuck also includes an electrode embedded in the dielectric layer and configured to generate an electrostatic field for retaining a wafer. The wafer chuck further includes a thermal conductive layer embedded in the main body or the dielectric layer. The thermal conductive layer has a lateral thermal conductivity greater than a vertical thermal conductivity.Type: GrantFiled: July 16, 2014Date of Patent: October 10, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Yeh-Chieh Wang, Jiun-Rong Pai, Hsu-Shui Liu, Cheng-Lung Lee, Kuang-Chung Liou
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Patent number: 9620326Abstract: An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.Type: GrantFiled: December 22, 2014Date of Patent: April 11, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin-Tsung Lin, Hsiao-Yin Hsieh, Chi-Hao Huang, Hong-Shing Chou, Yeh-Chieh Wang
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Patent number: 9550270Abstract: Among other things, one or more systems and techniques for increasing temperature for chemical mechanical polishing (CMP) are provided. For example, a liquid heater component is configured to supply heated liquid to a polishing pad upon which a semiconductor wafer is to be polished, resulting in a heated polishing pad having a heated polishing pad temperature. The increased temperature of the heated polishing pad increases oxidation of the semiconductor wafer, which improves a CMP removal rate of material from the semiconductor wafer due to a decreased oxidation timespan and a stabilization timespan for reaching a stable CMP removal rate during CMP. In this way, the semiconductor wafer is polished utilizing the heated polishing pad, such as by a tungsten CMP process.Type: GrantFiled: July 31, 2013Date of Patent: January 24, 2017Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Jung-Lung Hung, Rong-June Hsiao, Chi-Hao Huang, Hong-Hsing Chou, Yeh-Chieh Wang
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Patent number: 9543181Abstract: A replaceable electrostatic chuck sidewall shield is provided. The replaceable electrostatic chuck sidewall shield fills or partially fills an indentation located between a base member and a top member of an electrostatic chuck, such that the replaceable electrostatic chuck sidewall shield may protect an epoxy in the indentation or may replace the epoxy within the indentation. The replaceable electrostatic chuck sidewall shield may be fully contained with the indentation. The replaceable electrostatic chuck sidewall shield may also cover an epoxy in the indentation such that the replaceable electrostatic chuck sidewall shield protrudes beyond the indentation. In an alternate embodiment, the replaceable electrostatic chuck sidewall shield substantially covers the area in which a conductive pole is embedded in a bipolar electrostatic chuck.Type: GrantFiled: June 15, 2009Date of Patent: January 10, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsi-Shui Liu, Yeh-Chieh Wang, Jiun-Rong Pai
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Patent number: 9452509Abstract: A sapphire pad conditioner includes a sapphire substrate having multiple protrusions on a surface and a holder arranged to hold the sapphire substrate. The sapphire substrate is used for conditioning a chemical mechanical planarization (CMP) pad.Type: GrantFiled: June 28, 2013Date of Patent: September 27, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jung-Lung Hung, Chi-Hao Huang, Jaw-Lih Shih, Hong-Hsing Chou, Yeh-Chieh Wang
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Patent number: 9335758Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.Type: GrantFiled: March 17, 2014Date of Patent: May 10, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsu-Shui Liu, Yeh-Chieh Wang, Jiun-Rong Pai
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Patent number: 9305754Abstract: This disclosure relates to a magnet assembly including an epicyclic gearing system. The epicyclic gearing system including a central gear configured to be rotated, at least one peripheral gear connected to the central gear and configured to rotate and translate relative to the central gear, and an annulus surrounding the at least one peripheral gear and connected with the at least one peripheral gear. The magnet assembly further includes a magnet module connected with the epicyclic gearing system, the magnet module including a support connected with the at least one peripheral gear, the axis of rotation of the support being coaxial with the axis of rotation of the at least one peripheral gear connected with the support.Type: GrantFiled: July 6, 2012Date of Patent: April 5, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Liang Chueh, Hsu-Shui Liu, Jiun-Rong Pai, Pei-Nung Chen, Yeh-Chieh Wang
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Publication number: 20160020128Abstract: A wafer chuck is provided. The wafer chuck includes a main body and a dielectric layer disposed over the main body. The wafer chuck also includes an electrode embedded in the dielectric layer and configured to generate an electrostatic field for retaining a wafer. The wafer chuck further includes a thermal conductive layer embedded in the main body or the dielectric layer. The thermal conductive layer has a lateral thermal conductivity greater than a vertical thermal conductivity.Type: ApplicationFiled: July 16, 2014Publication date: January 21, 2016Inventors: Yeh-Chieh WANG, Jiun-Rong PAI, Hsu-Shui LIU, Cheng-Lung LEE, Kuang-Chung LIOU