Abstract: A light source includes a plurality of ultraviolet (UV) light emitting diodes (LEDs) and an LED phase shift controller coupled to the plurality of UV LEDs adapted to control the phase shift of each UV LED in the plurality of UV LEDs. The plurality of UV LEDs forms a UV LED array. An ultraviolet lithography system can include a light source as described above. The system can further include a mirror assembly in a light path of the light source, the mirror assembly having a polarization mirror with an interference coating. A method provides a light source for an ultraviolet lithography system including the element of providing an plurality of UV LEDs that emit UV light and the element of controlling a phase shift of the plurality of UV LEDs with an LED phase shift controller coupled to each UV LED or arrays of the UV LEDs in the plurality of UV LEDs.

Abstract: Embodiments of method for cooling a wafer are provided. A method for cooling a wafer includes placing the wafer in a processing module via a passage of a seat member. The method also includes moving a closure member toward the seat member in a diagonal manner. The method further includes engaging the seat member and the closure member and placing a portion of the closure member inside the passage. In addition, the method includes performing a process on the wafer in the processing module.

Abstract: An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.

Abstract: Among other things, one or more systems and techniques for increasing temperature for chemical mechanical polishing (CMP) are provided. For example, a liquid heater component is configured to supply heated liquid to a polishing pad upon which a semiconductor wafer is to be polished, resulting in a heated polishing pad having a heated polishing pad temperature. The increased temperature of the heated polishing pad increases oxidation of the semiconductor wafer, which improves a CMP removal rate of material from the semiconductor wafer due to a decreased oxidation timespan and a stabilization timespan for reaching a stable CMP removal rate during CMP. In this way, the semiconductor wafer is polished utilizing the heated polishing pad, such as by a tungsten CMP process.

Abstract: An apparatus for extending the useful life of an ion source, comprising an arc chamber containing a plurality of cathodes to be used sequentially and a plurality of repellers to protect cathodes when not in use. The arc chamber includes an arc chamber housing defining a reaction cavity, gas injection openings, a plurality of cathodes, and at least one repeller element. A method for extending the useful life of an ion source includes providing power to a first cathode of an arc chamber in an ion source, operating the first cathode, detecting a failure or degradation in performance of the first cathode, energizing a second cathode, and continuing operation of the arc chamber with the second cathode.

Abstract: A sapphire pad conditioner includes a sapphire substrate having multiple protrusions on a surface and a holder arranged to hold the sapphire substrate. The sapphire substrate is used for conditioning a chemical mechanical planarization (CMP) pad.

Abstract: A light source includes a plurality of ultraviolet (UV) light emitting diodes (LEDs) and an LED phase shift controller coupled to the plurality of UV LEDs adapted to control the phase shift of each UV LED in the plurality of UV LEDs. The plurality of UV LEDs forms a UV LED array. An ultraviolet lithography system can include a light source as described above. The system can further include a mirror assembly in a light path of the light source, the mirror assembly having a polarization mirror with an interference coating. A method provides a light source for an ultraviolet lithography system including the element of providing an plurality of UV LEDs that emit UV light and the element of controlling a phase shift of the plurality of UV LEDs with an LED phase shift controller coupled to each UV LED or arrays of the UV LEDs in the plurality of UV LEDs.

Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The first and second sensors may communicate the parameters using different and incompatible protocols. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: The present disclosure provides a system for fabricating a semiconductor device. The system includes a semiconductor fabrication tool. The semiconductor fabrication tool has an integrated inter interface that measures a first process parameter of the fabrication tool. The system also includes a wireless sensor. The wireless sensor is detachably coupled to the fabrication tool. The wireless sensor measures a second process parameter of the fabrication tool. The second process parameter is different from the first process parameter.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: This disclosure relates to a magnet assembly including an epicyclic gearing system. The epicyclic gearing system including a central gear configured to be rotated, at least one peripheral gear connected to the central gear and configured to rotate and translate relative to the central gear, and an annulus surrounding the at least one peripheral gear and connected with the at least one peripheral gear. The magnet assembly further includes a magnet module connected with the epicyclic gearing system, the magnet module including a support connected with the at least one peripheral gear, the axis of rotation of the support being coaxial with the axis of rotation of the at least one peripheral gear connected with the support.

Abstract: An apparatus and method for detecting an intensity of radiation in a process chamber, such as an ultraviolet curing process chamber, is disclosed. An exemplary apparatus includes a process chamber having a radiation source therein, wherein the radiation source is configured to emit radiation within the process chamber; a radiation sensor attached to the process chamber; and an optical fiber coupled with the radiation source and the radiation sensor, wherein the optical fiber is configured to transmit a portion of the emitted radiation to the radiation sensor, and the radiation sensor is configured to detect an intensity of the portion of the emitted radiation via the optical fiber.

Abstract: An input/output (I/O) interface blocking device includes a fitting member. The fitting member includes a protruding portion, which includes a first sidewall and a second sidewall opposite to each other. The first sidewall is slanted in a direction allowing the first fitting member to be inserted into a space in an I/O interface receptacle. The second sidewall is configured to block the fitting member from being pulled out of the space in the I/O interface receptacle.

Abstract: A plasma processing apparatus used in semiconductor device manufacturing includes a process kit formed of insulating materials such as quartz and coated with a Y2O3 coating. The Y2O3 coating is a thin film formed using suitable CVD or PVD operations. The Y2O3 coating is resistant to degradation in fluorine etching chemistries commonly used to etch silicon in semiconductor manufacturing. The plasma processing apparatus may be used in etching, stripping and cleaning operations. Also provided in another embodiment is a plasma processing apparatus having a quartz process kit coated with a sapphire-like film.

Abstract: The present disclosure provides a system for fabricating a semiconductor device. The system includes a semiconductor fabrication tool. The semiconductor fabrication tool has an integrated inter interface that measures a first process parameter of the fabrication tool. The system also includes a wireless sensor. The wireless sensor is detachably coupled to the fabrication tool. The wireless sensor measures a second process parameter of the fabrication tool. The second process parameter is different from the first process parameter.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a portable device. The portable device includes first and second sensors that respectively measure first and second fabrication process parameters. The first fabrication process parameter is different from the second fabrication process parameter. The portable device also includes a wireless transceiver that is coupled to the first and second sensors. The wireless transceiver receives the first and second fabrication process parameters and transmits wireless signals containing the first and second fabrication process parameters.

Abstract: A method includes providing a process chamber including a target, wherein the target has a first coefficient of thermal expansion (CTE); selecting a process kit including a surface layer having a second CTE close to the first CTE; and installing the process kit in the process chamber with the surface layer exposed to the process chamber. A ratio of a difference between the first CTE and the second CTE is less than about 35 percent.

Abstract: A replaceable electrostatic chuck sidewall shield is provided. The replaceable electrostatic chuck sidewall shield fills or partially fills an indentation located between a base member and a top member of an electrostatic chuck, such that the replaceable electrostatic chuck sidewall shield may protect an epoxy in the indentation or may replace the epoxy within the indentation. The replaceable electrostatic chuck sidewall shield may be fully contained with the indentation. The replaceable electrostatic chuck sidewall shield may also cover an epoxy in the indentation such that the replaceable electrostatic chuck sidewall shield protrudes beyond the indentation. In an alternate embodiment, the replaceable electrostatic chuck sidewall shield substantially covers the area in which a conductive pole is embedded in a bipolar electrostatic chuck.