Abstract: The present disclosure describes a semiconductor device with a fill structure. The semiconductor structure includes first and second fin structures on a substrate, an isolation region on the substrate and between the first and second fin structures, a first gate structure disposed on the first fin structure and the isolation region, a second gate structure disposed on the second fin structure and the isolation region, and the fill structure on the isolation region and between the first and second gate structures. The fill structure includes a dielectric structure between the first and second gate structures and an air gap enclosed by the dielectric structure. The air gap is below top surfaces of the first and second fin structures.

Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.

Abstract: The present invention relates to a superabsorbent polymer and a method for producing the same. The superabsorbent polymer includes a core layer polymerized with monomers having carboxylic group, a first shell layer formed from a surface crosslinking agent, and a second shell layer formed from zingiberaceae extracts. By a surface modification on the first shell layer performed from a specific amount of the zingiberaceae extracts, the superabsorbent polymer produced according to the method for producing the same has a good antimicrobial property and deodorizing effects, and retains an original absorbent property.

Abstract: A cleaning brush is provided. A cleaning unit comprises cleaning beans fixed on a surface of the carrier in a bi-spiral arrangement. The cleaning beans are arranged in an unequally-spaced manner on center of the carrier along a baseline; and, thus, bi-spirals are formed on the center and coiled in two different outward directions. Two annular spiral curve paths are formed with the cleaning beans as coiling the carrier and extending along the two directions. When the carrier cleans an electronic device, a solution or cleaning agent is discharged along the curve paths in spiral tangential directions. Hence, the bi-spiral cleaning unit obtains positive and negative directions on rotating to create a plurality of flow fields. Dirt is discharged easily with water distribution enhanced as compared to unidirectional spiral cleaning devices while a large contact surface, a good cleaning efficiency, and a high decontamination ratio are achieved.

Abstract: A cleaning brush is provided. A cleaning unit comprises cleaning beans fixed on a surface of the carrier in a bi-spiral arrangement. The cleaning beans are arranged in an unequally-spaced manner on center of the carrier along a baseline; and, thus, bi-spirals are formed on the center and coiled in two different outward directions. Two annular spiral curve paths are formed with the cleaning beans as coiling the carrier and extending along the two directions. When the carrier cleans an electronic device, a solution or cleaning agent is discharged along the curve paths in spiral tangential directions. Hence, the bi-spiral cleaning unit obtains positive and negative directions on rotating to create a plurality of flow fields. Dirt is discharged easily with water distribution enhanced as compared to unidirectional spiral cleaning devices while a large contact surface, a good cleaning efficiency, and a high decontamination ratio are achieved.

Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a free layer overlying a reference layer. A tunnel barrier layer overlies the reference layer disposed over a semiconductor substrate. The free layer overlies the tunnel barrier layer, and a capping layer overlies the free layer. A shunting structure includes a conductive material that vertically extends continuously from an outer sidewall of the free layer to an outer sidewall of the capping layer.

Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends substantially along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.

Abstract: A touch apparatus includes first touch electrodes and at least one edge touch electrode. Each of the first touch electrodes has first edges and a first side edge. A first acute angle is included by the first edges. The first side edge is connected to the first edges and is disposed opposite to the first acute angle. The at least one edge touch electrode is disposed outside the first touch electrodes. A shape of the at least one edge touch electrode is different from a shape of each of the first touch electrodes, and the at least one edge touch electrode has a non-straight edge.

Abstract: A touch apparatus includes first touch electrodes and at least one edge touch electrode. Each of the first touch electrodes has first edges and a first side edge. A first acute angle is included by the first edges. The first side edge is connected to the first edges and is disposed opposite to the first acute angle. The at least one edge touch electrode is disposed outside the first touch electrodes. A shape of the at least one edge touch electrode is different from a shape of each of the first touch electrodes, and the at least one edge touch electrode has a non-straight edge.

Abstract: A cleaning brush comprising a carrier and a cleaning unit is provided. The cleaning unit comprises a plurality of cleaning beans set on a surface of the carrier in a spiral arrangement. A spiral coiling around the carrier from an end of the carrier to the other end is formed. A spiral curve path is formed to coil the carrier circumferentially by extendedly arranging the cleaning beans. Hence, the present invention uses the cleaning beans of the cleaning unit to be set on surface of the carrier. On rotating in a fixed direction, the spiral cleaning unit generates a flow field which not only comprises a vertical flow for an object to be cleaned but also a horizontal flow forming a parallel stream. Thus, dirt can be removed more easily than by using a traditional matrix cleaning device.

Abstract: A superabsorbent polymer includes polymer particles, surface cross-linking agents and particles made of silicon-containing inorganic salt. The polymer particles have cross-linking inside the polymer particles. The surface cross-linking agents are covalently bound to the surface of the polymer particles so as to constitute a surface cross-linked region at the surface of each said resin particle, and the particles made of silicon-containing inorganic salt cover the surface of the polymer particles.

Abstract: A cleaning brush comprising a carrier and a cleaning unit is provided. The cleaning unit comprises a plurality of cleaning beans set on a surface of the carrier in a spiral arrangement. A spiral coiling around the carrier from an end of the carrier to the other end is formed. A spiral curve path is formed to coil the carrier circumferentially by extendedly arranging the cleaning beans. Hence, the present invention uses the cleaning beans of the cleaning unit to be set on surface of the carrier. On rotating in a fixed direction, the spiral cleaning unit generates a flow field which not only comprises a vertical flow for an object to be cleaned but also a horizontal flow forming a parallel stream. Thus, dirt can be removed more easily than by using a traditional matrix cleaning device.

Abstract: A superabsorbent polymer includes polymeric particles, surface cross-linking agents and an extract of a plant of Sapindaceae. The polymeric particles have cross-linking inside the polymeric particles. The surface cross-linking agents are covalently bound to the surface of the polymeric particles so as to constitute a layer of surface cross-linked region at the surface of each polymeric particle, and the extract of the plant of Sapindaceae covers the surface of the polymeric particles.

Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends substantially along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.

Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.

Abstract: A superabsorbent polymer includes polymeric particles, surface cross-linking agents and an extract of a plant of Sapindaceae. The polymeric particles have cross-linking inside the polymeric particles. The surface cross-linking agents are covalently bound to the surface of the polymeric particles so as to constitute a layer of surface cross-linked region at the surface of each polymeric particle, and the extract of the plant of Sapindaceae covers the surface of the polymeric particles.

Abstract: A superabsorbent polymer includes polymer particles, surface cross-linking agents and particles made of silicon-containing inorganic salt. The polymer particles have cross-linking inside the polymer particles. The surface cross-linking agents are covalently bound to the surface of the polymer particles so as to constitute a surface cross-linked region at the surface of each said resin particle, and the particles made of silicon-containing inorganic salt cover the surface of the polymer particles.

Abstract: A ball bat includes a barrel in which one or more stiffening elements or damping elements, or both, are located. The stiffening or damping elements may be positioned at a variety of locations, and may have a variety of configurations, for selectively reducing the barrel's performance without appreciably increasing the bat's moment of inertia.

Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.