Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends substantially along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.

Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.

Abstract: A superabsorbent polymer includes polymeric particles, surface cross-linking agents and an extract of a plant of Sapindaceae. The polymeric particles have cross-linking inside the polymeric particles. The surface cross-linking agents are covalently bound to the surface of the polymeric particles so as to constitute a layer of surface cross-linked region at the surface of each polymeric particle, and the extract of the plant of Sapindaceae covers the surface of the polymeric particles.

Abstract: A superabsorbent polymer includes polymer particles, surface cross-linking agents and particles made of silicon-containing inorganic salt. The polymer particles have cross-linking inside the polymer particles. The surface cross-linking agents are covalently bound to the surface of the polymer particles so as to constitute a surface cross-linked region at the surface of each said resin particle, and the particles made of silicon-containing inorganic salt cover the surface of the polymer particles.

Abstract: A ball bat includes a barrel in which one or more stiffening elements or damping elements, or both, are located. The stiffening or damping elements may be positioned at a variety of locations, and may have a variety of configurations, for selectively reducing the barrel's performance without appreciably increasing the bat's moment of inertia.

Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.

Abstract: A touch electrode layer includes a plurality of first touch electrodes and a plurality of second touch electrodes. The first touch electrodes are arranged to form a rectangle, wherein shapes of the first touch electrodes have the same size. The second touch electrodes are disposed around a periphery of the first touch electrodes. The second touch electrodes and the first touch electrodes are arranged to form a circle or a quasi-circle so as to define a circuit touch area or a quasi-circle touch area. A shape of each of the second touch electrodes is an arcuate triangle.

Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.

Abstract: A semiconductor sensing device that includes a nanowire conductive layer, a semiconductor sensing layer, and a conductive layer is provided. The nanowire conductive layer includes a plurality of connected conductive nanowires, and gaps are formed between the conductive nanowires. The semiconductor sensing layer is electrically connected to the nanowire conductive layer. The conductive layer is electrically connected to the semiconductor sensing layer. The semiconductor sensing layer is located between the nanowire conductive layer and the conductive layer. A manufacturing method of a semiconductor sensing device is also provided.

Abstract: A composite ball bat includes multiple failure planes within a barrel wall. By including multiple failure planes in a barrel wall, the bat exhibits a drop in performance when subjected to rolling or other extreme deflection, with no temporary increase in barrel performance. Because the barrel performance does not increase, the ball bat is able to comply with performance limitations imposed by regulatory associations.

Abstract: One or more semiconductor arrangements are provided. The semiconductor arrangements include a buried layer over a well, a dielectric layer over the buried layer, a first gate stack over the dielectric layer and a S/D region disposed proximate the first gate stack. The S/D region has a first tip proximity region that extends under the first gate stack. One or more methods of forming a semiconductor arrangement are also provided. The methods include forming a S/D recess in at least one of a dielectric layer, a buried layer or a well, wherein the S/D recess is proximate a first gate stack and has a first recess tip proximity region that extends under the first gate stack as a function of the buried layer, and forming a S/D region in the S/D recess such that the S/D region has a first tip proximity region that extends under the first gate stack.

Abstract: A touch electrode layer includes a plurality of first touch electrodes and a plurality of second touch electrodes. The first touch electrodes are arranged to form a rectangle, wherein shapes of the first touch electrodes have the same size. The second touch electrodes are disposed around a periphery of the first touch electrodes. The second touch electrodes and the first touch electrodes are arranged to form a circle or a quasi-circle so as to define a circuit touch area or a quasi-circle touch area. A shape of each of the second touch electrodes is an arcuate triangle.

Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.

Abstract: A ball bat includes one or more low-durability regions fortified by one or more reinforcing elements, such as a structural patch. If the reinforcing element is altered or removed, the durability of the ball bat is significantly reduced. For example, if the ball bat is subjected to internal shaving or external rolling in an attempt to increase the bat's performance, the reinforcing element would be removed or damaged such that the durability of the bat is reduced to the point that the ball bat's performance remains below a specified limit.

Abstract: An operating method of a storage device is provided. The operating method comprises the following steps. First, a first data is read from a target address of a first storage unit. Then, an assisting unit checks whether the target address is corresponding to a second data stored in a second storage unit. If the target address is corresponding to the second data, the assisting unit updates the first data according to the second data to generate an updated data. Next, an Error Correction Code (ECC) performs a decoding process on the updated data to generate a decoded data.

Abstract: Present example embodiments relate generally to methods, logic, systems, and devices for inspecting a semiconductor device. Example methods comprise applying an initial energy from an energy source to a first location of a conductive layer of the semiconductor device. Example methods further comprise measuring a resultant energy passing through the conductive layer using a probe at a second location of the conductive layer and analyzing the measured resultant energy passing through the conductive layer. Example methods further comprise determining a presence of an inconsistency in the conductive layer based on the analyzing.

Abstract: One or more semiconductor arrangements are provided. The semiconductor arrangements include a buried layer over a well, a dielectric layer over the buried layer, a first gate stack over the dielectric layer and a S/D region disposed proximate the first gate stack. The S/D region has a first tip proximity region that extends under the first gate stack. One or more methods of forming a semiconductor arrangement are also provided. The methods include forming a S/D recess in at least one of a dielectric layer, a buried layer or a well, wherein the S/D recess is proximate a first gate stack and has a first recess tip proximity region that extends under the first gate stack as a function of the buried layer, and forming a S/D region in the S/D recess such that the S/D region has a first tip proximity region that extends under the first gate stack.

Abstract: A semiconductor sensing device that includes a nanowire conductive layer, a semiconductor sensing layer, and a conductive layer is provided. The nanowire conductive layer includes a plurality of connected conductive nanowires, and gaps are formed between the conductive nanowires. The semiconductor sensing layer is electrically connected to the nanowire conductive layer. The conductive layer is electrically connected to the semiconductor sensing layer. The semiconductor sensing layer is located between the nanowire conductive layer and the conductive layer. A manufacturing method of a semiconductor sensing device is also provided.

Abstract: An embodiment disclosed bevel-axial auto-focusing method for a microscopic system, including: capturing full-frame bevel-axial input image; using image analysis to read image information and transmitting grayscale information to a statistic analysis module; the statistic module extracting image statistic characteristics and performing curve fitting with probability function; and estimating the optimal focus point based on the post-fitting characteristic parameters. A preferred embodiment combines image with Gaussian curve fitting and Kalman filter, and analyzes the in-focus position based on image quality so as to directly determine the optimal rectification value of the in-focus position on the object surface. The method can improve the accuracy and speed of auto-focusing.

Abstract: A ball bat includes one or more low-durability regions fortified by one or more reinforcing elements, such as a structural patch. If the reinforcing element is altered or removed, the durability of the ball bat is significantly reduced. For example, if the ball bat is subjected to internal shaving or external rolling in an attempt to increase the bat's performance, the reinforcing element would be removed or damaged such that the durability of the bat is reduced to the point that the ball bat's performance remains below a specified limit.