Abstract: A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy.

Abstract: A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy.

Abstract: A method embodiment includes forming a protective liner over the substrate and forming an inter-layer dielectric over the protective liner. The protective liner covers a sidewall of a gate spacer. The method further includes patterning a contact opening in the first ILD to expose a portion of the protective liner. The portion of the protective liner in the contact opening is removed to expose an active region at a top surface of the semiconductor substrate. A contact is formed in the contact opening. The contact is electrically connected to the active region.

Abstract: A motor includes a base plate, a stator, a rotor, a circuit board and a Hall element. The stator is disposed on the base plate. The rotor is disposed around the stator, and includes a rotating shaft and a magnetic assembly. The rotating shaft is extended to a center part of the stator. The magnetic assembly includes plural magnets. The circuit board is arranged between the stator and the base plate and comprises a Hall element. A first gap and a second gap are arranged between every two adjacent magnets. The first gap is in the vicinity of the Hall element, and opposed to the second gap. The distance of a vacant portion of the first gap is shorter than the distance of the second gap, thereby facilitating continuous and steady magnetic induction between the Hall element and the magnetic assembly.

Abstract: A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward facing facet. The upward facing facet has a first metal-semiconductor alloy surface and the downward facing facet has a second metal-semiconductor alloy surface, wherein the first metal-semiconductor alloy is different than the second metal-semiconductor alloy.

Abstract: A method including forming a trench over a layer disposed on a semiconductor substrate. The trench is filled with a first material to form a filled trench. A feature of a second material is formed over the filled trench. The feature is disposed over the filled trench and extends along two opposing sidewalls of the filled trench to a top surface of the layer. The feature is then planarized to expose a top surface of the filled trench and provide a first portion of the feature adjacent a first sidewall of the two opposing sidewalls of the filled trench and a second portion of the feature adjacent a second sidewall of the two opposing sidewalls of the filled trench. The first and second portions of the feature are used to define a dimension of an interconnect feature disposed over the semiconductor substrate.

Abstract: A method includes forming a first pattern having a first feature of a first material on a semiconductor substrate. A second pattern with a second feature and third feature of a second material, interposed by the first feature, is formed on the semiconductor substrate. Spacer elements then are formed on sidewalls of the first feature, the second feature, and the third feature. After forming the spacer elements, the second material comprising the second and third features is selectively removed to form a first opening and a second opening. The first feature, the first opening and the second opening are used as a masking element to etch the target layer.

Abstract: A method includes growing an epitaxy semiconductor region at a major surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing upwardly and a downward facing facet facing downwardly. The method further includes forming a first metal silicide layer contacting the upward facing facet, and forming a second metal silicide layer contacting the downward facing facet. The first metal silicide layer and the second metal silicide layer comprise different metals.

Abstract: A motor comprises a coil structure and a plurality of magnetic materials. The coil structure includes three winding groups, each of which has a plurality of winding portions. The winding portions have an interval therebetween, and are electrically connected by a wire. The magnetic materials are disposed adjacent to the coil structure and corresponding to the winding groups. Accordingly, the motor has more magnetic materials within the same bending angle of the enameled wire, so that the motor can output larger torsion and power to enhance the motor efficiency.

Abstract: A method including forming a trench over a layer disposed on a semiconductor substrate. The trench is filled with a first material to form a filled trench. A feature of a second material is formed over the filled trench. The feature is disposed over the filled trench and extends along two opposing sidewalls of the filled trench to a top surface of the layer. The feature is then planarized to expose a top surface of the filled trench and provide a first portion of the feature adjacent a first sidewall of the two opposing sidewalls of the filled trench and a second portion of the feature adjacent a second sidewall of the two opposing sidewalls of the filled trench. The first and second portions of the feature are used to define a dimension of an interconnect feature disposed over the semiconductor substrate.

Abstract: A method includes forming a first pattern having a first feature of a first material on a semiconductor substrate. A second pattern with a second feature and third feature of a second material, interposed by the first feature, is formed on the semiconductor substrate. Spacer elements then are formed on sidewalls of the first feature, the second feature, and the third feature. After forming the spacer elements, the second material comprising the second and third features is selectively removed to form a first opening and a second opening. The first feature, the first opening and the second opening are used as a masking element to etch the target layer.

Abstract: A method embodiment includes forming a protective liner over the substrate and forming an inter-layer dielectric over the protective liner. The protective liner covers a sidewall of a gate spacer. The method further includes patterning a contact opening in the first ILD to expose a portion of the protective liner. The portion of the protective liner in the contact opening is removed to expose an active region at a top surface of the semiconductor substrate. A contact is formed in the contact opening. The contact is electrically connected to the active region.

Abstract: A method includes forming a first pattern having a first opening on a semiconductor substrate. The first opening is then filled. A second pattern of a first and second feature, interposed by the filled opening, is formed on the semiconductor substrate. Spacer elements then are formed on sidewalls of the filled opening, the first feature and the second feature. After forming the spacer elements, the material comprising first and second features is removed to form a second opening and a third opening. The filled opening, the second opening and the third opening are used as a masking element to etch a target layer of the substrate.

Abstract: A method including forming a first pattern having a first and second feature is described. A masking layer is formed over the first and second features. An opening is patterned in the masking layer. The opening can extend over at least one of the first and second features. The patterned opening is then used to form a third feature (filled trench) between the first and second features. A second pattern is then formed that includes a fourth feature and fifth feature each having an edge defined by the third feature. The first, second, fourth and fifth features may then be used to pattern an underlying layer over the semiconductor substrate.

Abstract: A method includes growing an epitaxy semiconductor region at a major surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing upwardly and a downward facing facet facing downwardly. The method further includes forming a first metal silicide layer contacting the upward facing facet, and forming a second metal silicide layer contacting the downward facing facet. The first metal silicide layer and the second metal silicide layer comprise different metals.

Abstract: A method including forming a first pattern having a first and second feature is described. A masking layer is formed over the first and second features. An opening is patterned in the masking layer. The opening can extend over at least one of the first and second features. The patterned opening is then used to form a third feature (filled trench) between the first and second features. A second pattern is then formed that includes a fourth feature and fifth feature each having an edge defined by the third feature. The first, second, fourth and fifth features may then be used to pattern an underlying layer over the semiconductor substrate.

Abstract: A motor comprises a coil structure and a plurality of magnetic materials. The coil structure includes three winding groups, each of which has a plurality of winding portions. The winding portions have an interval therebetween, and are electrically connected by a wire. The magnetic materials are disposed adjacent to the coil structure and corresponding to the winding groups. Accordingly, the motor has more magnetic materials within the same bending angle of the enameled wire, so that the motor can output larger torsion and power to enhance the motor efficiency.

Abstract: A motor includes a base plate, a stator, a rotor, a circuit board and a Hall element. The stator is disposed on the base plate. The rotor is disposed around the stator, and includes a rotating shaft and a magnetic assembly. The rotating shaft is extended to a center part of the stator. The magnetic assembly includes plural magnets. The circuit board is arranged between the stator and the base plate and comprises a Hall element. A first gap and a second gap are arranged between every two adjacent magnets. The first gap is in the vicinity of the Hall element, and opposed to the second gap. The distance of a vacant portion of the first gap is shorter than the distance of the second gap, thereby facilitating continuous and steady magnetic induction between the Hall element and the magnetic assembly.

Abstract: A passive fan includes a frame, at least one impeller and at least one driving device. The impeller is disposed in the frame. The driving device is disposed in the body of the frame and separated from the impeller, and drives the impeller to rotate. The driving device is an independent motor, a driver, a rotating wheel or a driving gear.

Abstract: A passive fan includes a frame, at least one impeller and at least one driving device. The impeller is disposed in the frame. The driving device is disposed in the body of the frame and separated from the impeller, and drives the impeller to rotate. The driving device is an independent motor, a driver, a rotating wheel or a driving gear.