Patents by Inventor Yen-Shuo Su
Yen-Shuo Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11340531Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.Type: GrantFiled: July 10, 2020Date of Patent: May 24, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ting-Ya Cheng, Han-Lung Chang, Shi-Han Shann, Li-Jui Chen, Yen-Shuo Su
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Publication number: 20220011675Abstract: A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.Type: ApplicationFiled: July 10, 2020Publication date: January 13, 2022Inventors: Ting-Ya CHENG, Han-Lung CHANG, Shi-Han SHANN, Li-Jui CHEN, Yen-Shuo SU
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Patent number: 11153959Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation comprises a droplet generator, an excitation laser source, an energy detector, and a feedback controller. The droplet generator is configured to generate target droplets. The excitation laser is configured to generate a pre-pulse and a main pulse to convert the target droplets to plasma by heating. The energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. The feedback controller is configured to adjust a time delay between a subsequent pre-pulse and main pulse generated by the excitation laser based on the variation in EUV energy generated by a given main pulse.Type: GrantFiled: August 7, 2019Date of Patent: October 19, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chia Hsu, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien, Yen-Shuo Su, Chieh Hsieh, Chi Yang
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Publication number: 20210318625Abstract: In accordance with some embodiments, a lithography method in semiconductor manufacturing is provided. The lithography method includes transmitting a main pulse laser to a zone of excitation through a first optic assembly. The lithography method further includes supplying a coolant to the first optic assembly and detecting a temperature of the coolant with a use of at least one sensor. The lithography method also includes adjusting a heat transfer rate between the coolant and the first optic assembly based on the temperature of the first optic assembly. In addition, the lithography method includes generating a droplet of a target material into the zone of excitation. The lithography method further includes exciting the droplet of the target material into plasma with the main pulse laser in the zone of excitation.Type: ApplicationFiled: April 9, 2020Publication date: October 14, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi YANG, Yen-Shuo SU, Jui-Pin WU, Li-Jui CHEN
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Patent number: 11133374Abstract: A method includes depositing a magnetic layer over a dielectric layer, and etching a first portion of the magnetic layer, in which a second portion of the magnetic layer that is directly under the first portion of the magnetic layer remains over the dielectric layer after etching the first portion of the magnetic layer. The second portion of the magnetic layer is etched.Type: GrantFiled: October 28, 2019Date of Patent: September 28, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Shuo Su, Chun-Tsung Kuo, Jiech-Fun Lu
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Publication number: 20210010137Abstract: A control system for a plasma treatment apparatus includes a wafer treatment device. The wafer treatment device includes a vapor chamber and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes. The upper electrode assembly includes an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle. The at least one gas nozzle is separated from the gate distribution plate by a gap. The control system includes a measurement device configured to measure a thickness profile of a wafer. The control system includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal.Type: ApplicationFiled: September 28, 2020Publication date: January 14, 2021Inventors: Yen-Shuo SU, Ying XIAO, Chin-Hsiang LIN
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Patent number: 10787742Abstract: A control system for a plasma treatment apparatus includes a wafer treatment device. The wafer treatment device includes a vapor chamber and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes. The upper electrode assembly includes an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle. The at least one gas nozzle is separated from the gate distribution plate by a gap. The control system includes a measurement device configured to measure a thickness profile of a wafer. The control system includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal.Type: GrantFiled: November 27, 2017Date of Patent: September 29, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yen-Shuo Su, Ying Xiao, Chin-Hsiang Lin
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Publication number: 20200137864Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.Type: ApplicationFiled: October 16, 2019Publication date: April 30, 2020Inventors: Yen-Shuo SU, Jen-Hao YEH, Jhan-Hong YEH, Ting-Ya CHENG, Yee-Shian Henry TONG, Chun-Lin CHANG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG
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Publication number: 20200066832Abstract: A method includes depositing a magnetic layer over a dielectric layer, and etching a first portion of the magnetic layer, in which a second portion of the magnetic layer that is directly under the first portion of the magnetic layer remains over the dielectric layer after etching the first portion of the magnetic layer. The second portion of the magnetic layer is etched.Type: ApplicationFiled: October 28, 2019Publication date: February 27, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Shuo SU, Chun-Tsung KUO, Jiech-Fun LU
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Publication number: 20200060015Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation comprises a droplet generator, an excitation laser source, an energy detector, and a feedback controller. The droplet generator is configured to generate target droplets. The excitation laser is configured to generate a pre-pulse and a main pulse to convert the target droplets to plasma by heating. The energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. The feedback controller is configured to adjust a time delay between a subsequent pre-pulse and main pulse generated by the excitation laser based on the variation in EUV energy generated by a given main pulse.Type: ApplicationFiled: August 7, 2019Publication date: February 20, 2020Inventors: Chun-Chia HSU, Po-Chung CHENG, Li-Jui CHEN, Shang-Chieh CHIEN, Yen-Shuo SU, Chieh HSIEH, Chi YANG
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Publication number: 20200008290Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.Type: ApplicationFiled: April 10, 2019Publication date: January 2, 2020Inventors: Yen-Shuo SU, Chun-Lin CHANG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG
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Patent number: 10461145Abstract: A method for fabricating a magnetic core includes depositing a magnetic layer on a dielectric layer, forming a first photoresist layer on the magnetic layer and patterning the first photoresist layer, etching the magnetic layer through the patterned first photoresist layer, in which a first section of the magnetic layer exposed by the first photoresist layer remains on the dielectric layer after the magnetic layer is etched, removing the patterned first photoresist layer, forming a second photoresist layer on the magnetic layer and patterning the second photoresist layer, etching the magnetic layer through the patterned second photoresist layer, and removing the second photoresist layer.Type: GrantFiled: January 25, 2018Date of Patent: October 29, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Shuo Su, Chun-Tsung Kuo, Jiech-Fun Lu
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Patent number: 10264861Abstract: An umbrella includes a shaft, a top cap and a runner. Multiple rib units and multiple stretchers are pivotably connected to the top cap and the runner. The rib units each have a first rib, a second rib and a third rib. The first, second and third ribs are pivotably connected in sequence. A canopy is mounted to the rib units. The second ribs each have a first connection portion on one end thereof, and the first connection portion has a seat which is connected to a link unit. The link unit has a joint which is connected to the third rib. The third rib has a positioning member to position the joint. The third rib and the joint are connected with each other to bear wind force applied to the second rib and the third rib, such that the second and third ribs do not deform.Type: GrantFiled: March 21, 2017Date of Patent: April 23, 2019Inventor: Yen-Shuo Su
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Patent number: 10170536Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; a magnetic layer in the second passivation layer; and an etch stop layer between the magnetic layer and the first passivation layer, wherein the etch stop layer includes at least one acid resistant layer, and the acid resistant layer includes a metal oxide. A method for manufacturing a semiconductor structure is also disclosed.Type: GrantFiled: June 19, 2017Date of Patent: January 1, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hung-Wen Hsu, Yen-Shuo Su, Jiech-Fun Lu, Kuan Chih Huang, Tze Yun Chou, Chun-Mao Chiu, Tao-Sheng Chang
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Publication number: 20180366536Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; a magnetic layer in the second passivation layer; and an etch stop layer between the magnetic layer and the first passivation layer, wherein the etch stop layer includes at least one acid resistant layer, and the acid resistant layer includes a metal oxide. A method for manufacturing a semiconductor structure is also disclosed.Type: ApplicationFiled: June 19, 2017Publication date: December 20, 2018Inventors: HUNG-WEN HSU, YEN-SHUO SU, JIECH-FUN LU, KUAN CHIH HUANG, TZE YUN CHOU, CHUN-MAO CHIU, TAO-SHENG CHANG
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Publication number: 20180271238Abstract: An umbrella includes a shaft, a top cap and a runner. Multiple rib units and multiple stretchers are pivotably connected to the top cap and the runner. The rib units each have a first rib, a second rib and a third rib. The first, second and third ribs are pivotably connected in sequence. A canopy is mounted to the rib units. The second ribs each have a first connection portion on one end thereof, and the first connection portion has a seat which is connected to a link unit. The link unit has a joint which is connected to the third rib. The third rib has a positioning member to position the joint. The third rib and the joint are connected with each other to bear wind force applied to the second rib and the third rib, such that the second and third ribs do not deform.Type: ApplicationFiled: March 21, 2017Publication date: September 27, 2018Inventor: Yen-Shuo Su
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Publication number: 20180166527Abstract: A method for fabricating a magnetic core includes depositing a magnetic layer on a dielectric layer, forming a first photoresist layer on the magnetic layer and patterning the first photoresist layer, etching the magnetic layer through the patterned first photoresist layer, in which a first section of the magnetic layer exposed by the first photoresist layer remains on the dielectric layer after the magnetic layer is etched, removing the patterned first photoresist layer, forming a second photoresist layer on the magnetic layer and patterning the second photoresist layer, etching the magnetic layer through the patterned second photoresist layer, and removing the second photoresist layer.Type: ApplicationFiled: January 25, 2018Publication date: June 14, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Shuo SU, Chun-Tsung KUO, Jiech-Fun LU
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Publication number: 20180073144Abstract: A control system for a plasma treatment apparatus includes a wafer treatment device. The wafer treatment device includes a vapor chamber and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes. The upper electrode assembly includes an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle for controlling a flow of gas from a gas supply to the holes via the at least one gas nozzle. The at least one gas nozzle is separated from the gate distribution plate by a gap. The control system includes a measurement device configured to measure a thickness profile of a wafer. The control system includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal.Type: ApplicationFiled: November 27, 2017Publication date: March 15, 2018Inventors: Yen-Shuo SU, Ying XIAO, Chin-Hsiang LIN
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Patent number: 9893141Abstract: A magnetic core includes a center section having a substantially uniform thickness, and an edge section connected to and surrounding the center section. The edge section includes a bottom portion and a top portion disposed on the bottom portion, in which the bottom portion has a gradual side surface since the top portion has a steep side surface. The profile of the magnetic core can be more rectangular thereby providing better inductor performance.Type: GrantFiled: February 26, 2015Date of Patent: February 13, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Shuo Su, Chun-Tsung Kuo, Jiech-Fun Lu
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Patent number: 9887071Abstract: The present disclosure relates to a semiconductor body etching apparatus having a multi-zone end point detection system. In some embodiments, the multi-zone end point detection system has a processing chamber that houses a workpiece that is etched according to an etching process. A plurality of end point detector (EPD) probes are located within the processing chamber. Respective EPD probes are located within different zones in the processing chamber, thereby enabling the detection of end point signals from multiple zones within the processing chamber. The detected end point signals are provided from the plurality of EPD probes to an advanced process control (APC) unit. The APC unit is configured to make a tuning knob adjustment to etching process parameters based upon the detected end point signals and to thereby account for etching non-uniformities.Type: GrantFiled: December 16, 2011Date of Patent: February 6, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-An Chen, Yen-Shuo Su, Ying Xiao, Chin-Hsiang Lin