Abstract: A keyswitch assembly includes a switch module, a support mechanism, a blocking mechanism, an enhancing light source, and a backlight source. The switch module includes a substrate, a signal generator, and a signal sensor. The signal generator generates a sensing signal. The signal sensor receives the sensing signal to obtain a sensing strength. The support mechanism is disposed on the substrate. The blocking mechanism is disposed on the substrate and has a light-permeable portion. A portion of the blocking mechanism inserts into or escapes from a gap between the signal generator and the signal sensor. The backlight source is disposed on the substrate and located outside the vertical projection of the blocking mechanism on the substrate. The enhancing light source is disposed on the substrate and located within the vertical projection of the blocking mechanism on the substrate and corresponds to the light-permeable portion.

Abstract: A semiconductor device and methods of forming the semiconductor device are described herein and are directed towards forming a source/drain contact plug for adjacent finFETs. The source/drain regions of the adjacent finFETs are embedded in an interlayer dielectric and are separated by an isolation region of a cut-metal gate (CMG) structure isolating gate electrodes of the adjacent finFETs The methods include recessing the isolation region, forming a contact plug opening through the interlayer dielectric to expose portions of a contact etch stop layer disposed over the source/drain regions through the contact plug opening, the contact etch stop layer being a different material from the material of the isolation region. Once exposed, the portions of the CESL are removed and a conductive material is formed in the contact plug opening and in contact with the source/drain regions of the adjacent finFETs and in contact with the isolation region.

Abstract: A semiconductor device including a gaseous spacer and a method for forming the same are disclosed. In an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer over the first gate spacer; removing a portion of the second gate spacer, at least a portion of the second gate spacer remaining; removing the first gate spacer to form a first opening; and after removing the first gate spacer, removing the remaining portion of the second gate spacer through the first opening.

Abstract: A keyswitch assembly includes a switch module, a support mechanism, and a blocking mechanism. The switch module includes a substrate, a signal generator, and a signal sensor. The signal generator provides a sensing signal. The signal sensor receives the sensing signal to obtain a sensing intensity. The support mechanism is disposed on the substrate. A top portion of the support mechanism moves in response to a pressing force. The blocking mechanism includes a pivoting portion rotatably disposed on the substrate, a connecting piece extending from the pivoting portion and movably connected to the support mechanism to be driven by the top portion to swivel relative to the substrate, and a blocking piece extending from the pivoting portion and driven by the connecting piece to be inserted into or escape from the gap between the signal generator and the signal sensor to change the magnitude of the sensing intensity.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin structure over the base. The semiconductor device structure includes an isolation structure over the base and surrounding a lower portion of the fin structure. The semiconductor device structure includes a gate stack wrapped around an upper portion of the fin structure. The semiconductor device structure includes a source/drain structure partially embedded in the isolation structure and the lower portion of the fin structure. The source/drain structure has an undoped semiconductor layer and a first doped layer over the undoped semiconductor layer, and the undoped semiconductor layer separates the first doped layer from the isolation structure.

Abstract: Various examples of an integrated circuit with a sidewall spacer and a technique for forming an integrated circuit with such a spacer are disclosed herein. In some examples, the method includes receiving a workpiece that includes a substrate and a gate stack disposed upon the substrate. A spacer is formed on a side surface of the gate stack that includes a spacer layer with a low-k dielectric material. A source/drain region is formed in the substrate; and a source/drain contact is formed coupled to the source/drain region such that the spacer layer of the spacer is disposed between the source/drain contact and the gate stack.

Abstract: A method includes providing dummy gate structures disposed over a device region and over an isolation region adjacent the active region, first gate spacers disposed along sidewalls of the dummy gate structures in the active region, and second gate spacers disposed along sidewalls of the dummy gate structures in the isolation region, removing top portions of the second, but not the first gate spacers, forming a first dielectric layer over the first gate spacers and remaining portions of the second gate spacers, replacing the dummy gate structures with metal gate structures after the forming of the first dielectric layer, removing the first gate spacers after the replacing of the dummy gate structures, and forming a second dielectric layer over top surfaces of the metal gate structures and of the first dielectric layer.

Abstract: The present invention discloses a mangosteen pericarp extract and process for its preparation thereof. The mangosteen pericarp extract containing ?-mangostin and ?-mangostin which obtains from preparation steps comprising fragmentation, organic solvent soaking, aqueous solution, or acidic solution soaking, concentration, spray drying and grinding steps from the rind of the mangosteen. The present invention has advantages of simple preparation process to address efficiency issue, no need to have heating under reflux in extraction steps and the solvents which used are friendly to human body and environment. The mangosteen pericarp extract (?-Xones Prime) can significantly decrease insulin resistance, and bodyweight gain induced by daily high fat diet intake. In addition, administration of the mangosteen pericarp ethanolic extract can reduce fat accumulation in the adipose and muscle tissue of rats with daily high fat diet intake.

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

Abstract: A semiconductor device including a gaseous spacer and a method for forming the same are disclosed. In an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer over the first gate spacer; removing a portion of the second gate spacer, at least a portion of the second gate spacer remaining; removing the first gate spacer to form a first opening; and after removing the first gate spacer, removing the remaining portion of the second gate spacer through the first opening.

Abstract: The present invention discloses a mangosteen pericarp extract and process for its preparation thereof. The mangosteen pericarp extract containing ?-mangostin and ?-mangostin which obtains from preparation steps comprising fragmentation, organic solvent soaking, aqueous solution, or acidic solution soaking, concentration, spray drying and grinding steps from the rind of the mangosteen. The present invention has advantages of simple preparation process to address efficiency issue, no need to have heating under reflux in extraction steps and the solvents which used are friendly to human body and environment. The mangosteen pericarp hydrophilic extract (?-Xones Aqua Choice) inhibits intracellular melanin production, and cellular tyrosinase activity. Mangosteen pericarp hydrophilic extract could be used as a cosmic composition for skin while, or even prevention of hyperpigmentation, as well as could be developed into a candidate drug composition for therapy of hyperpigmentation.

Abstract: A semiconductor structure includes a first device and a second device. The first device includes: a first gate structure formed over an active region and a first air spacer disposed adjacent to the first gate structure. The second device includes: a second gate structure formed over an isolation structure and a second air spacer disposed adjacent to the second gate structure. The first air spacer and the second air spacer have different sizes.

Abstract: Semiconductor devices and methods of fabrication are described herein. The method includes steps for patterning fins in a multilayer stack and forming an opening in a fin and into a substrate as an initial step in forming a source/drain region. A first semiconductor material is epitaxially grown from channels exposed along sidewalls of the opening to form first source/drain structures. A second semiconductor material is epitaxially grown from the first semiconductor material to form a second source/drain structure over and to fill a space between the first source/drain structures. A bottom of the second source/drain structure is located below a bottommost surface of the first source/drain structures. The second semiconductor material has a greater concentration percentage by volume of germanium than the first semiconductor material. A stack of nanostructures is formed by removing sacrificial layers of the multilayer stack, the second semiconductor material being electrically coupled to the nanostructures.

Abstract: An antenna array device is provided, which includes a ground plate, a substrate, an antenna array, and multiple patch elements. The substrate is disposed on the ground plate. The antenna array is disposed on the substrate. And the multiple patch elements are disposed on the substrate and arranged around the antenna array, and the multiple patch elements are floating (not connected to the ground plate).

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate, at least two gate structures disposed over the substrate, each of the at least two gate structures including a gate electrode and a spacer disposed along sidewalls of the gate electrode, wherein the spacer includes a refill portion and a bottom portion, the refill portion of the spacer has a funnel shape such that a top surface of the refill portion of the spacer is larger than a bottom surface of the refill portion of the spacer, and a source/drain contact disposed over the substrate and between the spacers of the at least two gate structures.

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

Abstract: Methods for making a semiconductor device using an improved BARC (bottom anti-reflective coating) are provided herein. The improved BARC comprises a polymer formed from at least a styrene monomer having at least one or two hydrophilic substituents. The monomer(s) and substituents can be varied as desired to obtain a balance between film adhesion and wet etch resistance. Also provided is a semiconductor device produced using such methods.

Abstract: The present disclosure relates to a beamforming device, including a transceiver circuit, a switch circuit and a beam former. The switch circuit is electrically connected to the transceiver circuit. The beam former contains a plurality of antenna units. The antenna units receive and send signals according to multiple radiation angles, and the radiation angle of each antenna unit is different. The switch circuit selectively conducts one of the antenna units to the transceiver circuit according to a control signal.

Abstract: The present invention discloses a mangosteen pericarp extract and process for its preparation thereof. The mangosteen pericarp extract containing ?-mangostin and ?-mangostin which obtains from preparation steps comprising fragmentation, organic solvent soaking, aqueous solution, or acidic solution soaking, concentration, spray drying and grinding steps from the rind of the mangosteen. The present invention has advantages of simple preparation process to address efficiency issue, no need to have heating under reflux in extraction steps and the solvents which used are friendly to human body and environment.

Abstract: A semiconductor structure includes a first device and a second device. The first device includes: a first gate structure formed over an active region and a first air spacer disposed adjacent to the first gate structure. The second device includes: a second gate structure formed over an isolation structure and a second air spacer disposed adjacent to the second gate structure. The first air spacer and the second air spacer have different sizes.