Abstract: Disclosed are methods for nucleic acid amplification wherein nucleic acid templates, beads, and amplification reaction solution are emulsified and the nucleic acid templates are amplified to provide clonal copies of the nucleic acid templates attached to the beads. Also disclosed are kits and apparatuses for performing the methods of the invention.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a gate stack formed over a semiconductor substrate, a source/drain contact structure adjacent to the gate stack, and a gate spacer formed between the gate stack and the source/drain contact structure. The semiconductor device structure also includes a first insulating capping feature covering an upper surface of the gate stack, a second insulating capping feature covering an upper surface of the source/drain contact structure, and an insulating layer covering the upper surfaces of the first insulating capping feature and the second insulating capping feature. The second insulating capping feature includes a material that is different from a material of the first insulating capping feature. The semiconductor device structure also includes a via structure passing through the insulating layer and the first insulating capping feature and electrically connected to the gate stack.

Abstract: A memory storage device is fabricated using a semiconductor fabrication process. Often times, manufacturing variations and/or misalignment tolerances present within the semiconductor fabrication process can cause the memory storage device to differ from other memory storage devices similarly designed and fabricated by the semiconductor fabrication process. For example, uncontrollable random physical processes in the semiconductor fabrication process can cause small differences, such as differences in doping concentrations, oxide thicknesses, channel lengths, structural widths, and/or parasitics to provide some examples, between these memory storage devices. These small differences can cause bitlines within the memory storage device to be physically unique with no two bitlines being identical. As a result, the uncontrollable random physical processes in the semiconductor fabrication process can cause electronic data read from the memory storage device to propagate along the bitlines at different rates.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a gate stack formed over a semiconductor substrate, a source/drain contact structure adjacent to the gate stack, and a gate spacer formed between the gate stack and the source/drain contact structure. The semiconductor device structure also includes a first insulating capping feature covering an upper surface of the gate stack, a second insulating capping feature covering an upper surface of the source/drain contact structure, and an insulating layer covering the upper surfaces of the first insulating capping feature and the second insulating capping feature. The second insulating capping feature includes a material that is different from a material of the first insulating capping feature. The semiconductor device structure also includes a via structure passing through the insulating layer and the first insulating capping feature and electrically connected to the gate stack.

Abstract: A source/drain region is disposed in a substrate. A gate structure is disposed over the substrate. A gate spacer is disposed on a sidewall of the gate structure. The gate spacer and the gate structure have substantially similar heights. A via is disposed over and electrically coupled to: the source/drain region or the gate structure. A mask layer is disposed over the gate spacer. The mask layer has a greater dielectric constant than the gate spacer. A first side of the mask layer is disposed adjacent to the via. A dielectric layer is disposed on a second side of the mask layer, wherein the mask layer is disposed between the dielectric layer and the via.

Abstract: A memory storage device is fabricated using a semiconductor fabrication process. Often times, manufacturing variations and/or misalignment tolerances present within the semiconductor fabrication process can cause the memory storage device to differ from other memory storage devices similarly designed and fabricated by the semiconductor fabrication process. For example, uncontrollable random physical processes in the semiconductor fabrication process can cause small differences, such as differences in doping concentrations, oxide thicknesses, channel lengths, structural widths, and/or parasitics to provide some examples, between these memory storage devices. These small differences can cause bitlines within the memory storage device to be physically unique with no two bitlines being identical. As a result, the uncontrollable random physical processes in the semiconductor fabrication process can cause electronic data read from the memory storage device to propagate along the bitlines at different rates.

Abstract: Disclosed are methods for nucleic acid amplification wherein nucleic acid templates, beads, and amplification reaction solution are emulsified and the nucleic acid templates are amplified to provide clonal copies of the nucleic acid templates attached to the beads. Also disclosed are kits and apparatuses for performing the methods of the invention.

Abstract: Disclosed are methods for nucleic acid amplification wherein nucleic acid templates, beads, and amplification reaction solution are emulsified and the nucleic acid templates are amplified to provide clonal copies of the nucleic acid templates attached to the beads. Also disclosed are kits and apparatuses for performing the methods of the invention.

Abstract: An embodiment of a method for generating a flow order that minimizes the accumulation of phasic synchrony error in sequence data is described that comprises the steps of: (a) generating a plurality of sequential orderings of nucleotides species comprising a k-base length, wherein the sequential orderings define a sequence of introduction of nucleotide species into a sequencing by synthesis reaction environment; (b) simulating acquisition of sequence data from one or more reference genomes using the sequential orderings, wherein the sequence data comprises an accumulation of phasic synchrony error; and (c) selecting one or more of the sequential orderings using a read length parameter and an extension rate parameter.

Abstract: An upper gastrointestinal bleeding monitoring system includes a detection device and a signal processing device to determine bleeding condition of an upper gastrointestinal tract by using relation of time and intensity ratios of RGB three primary colors. The detecting device is placed to the upper gastrointestinal tract of a patient via his/her mouth or nasal passage and then stay the upper gastrointestinal tract for several days for detection of bleeding. The signal processing device may receive and display signal from the detection device to help medical professionals check if bleeding occurs in an upper gastrointestinal tract. Moreover, a procedure of determination of bleeding in an upper gastrointestinal tract with the upper gastrointestinal bleeding monitoring system is described.

Abstract: A write assist circuit includes a write detection circuit, a write detection-aware write driver and a write condition recovery circuit. The write detection circuit receives a detected result signal and a write data, and generates a write detect control signal and generating a selecting signal according to the detection result signal and the write data. The write detection-aware write driver receives the write detect control signal and operates a write detection operation on a selected memory cell according to the write detect control signal, and decides whether to provide a negative voltage to one of a bit line and an inverted bit line of the selected memory cell or not according to the selecting signal.

Abstract: An embodiment of method for correcting an error associated with phasic synchrony of sequence data generated from a population of substantially identical copies of a template molecule is described that comprises (a) detecting a signal generated in response to an incorporation of one or more nucleotides in a sequencing reaction; (b) generating a value for the signal; and (c) correcting the value for the phasic synchrony error using a first parameter and a second carry forward parameter.

Abstract: The present invention is an image based oxygen saturation measuring device and method thereof. The method comprises steps of providing a plurality of red lights and a plurality of infrared lights arranged uniformly in an interlocked fashion and turned on alternatively; controlling the plurality of red lights and infrared lights to irradiate onto a selected skin area of a testee to have a red light turn-on period and an infrared light turn-on period; receiving a reflected version of the plurality of red lights and infrared lights from the selected skin area, respectively; and analyzing one reflected red light and one infrared light to acquire an oxygen saturation index for each of the coordination points. By means of the present invention, the measurement of oxygen saturation may be much exempted from effects brought from exterior interference and poor blood circulation, and may achieve a large measurement area in a single time.

Abstract: Some embodiments relate to an integrated circuit (IC) including one or more finFET devices. A finFET includes a fin of semiconductor material extending upwards from a semiconductor substrate. First and second source/drain regions, which have a first doping type, are spaced apart laterally from one another in the fin. A channel region is disposed in the fin and physically separates the first and second source/drain regions from one another. The channel region has a second doping type opposite the first doping type. A conductive gate electrode straddles the fin about the channel region and is separated from the channel region by a gate dielectric. A shallow doped region, which has the first doping type, is disposed near a surface of the fin around upper and sidewall fin regions. The shallow doped region extends continuously under the gate electrode between outer edges of the gate electrode.

Abstract: Disclosed are methods for nucleic acid amplification wherein nucleic acid templates, beads, and amplification reaction solution are emulsified and the nucleic acid templates are amplified to provide clonal copies of the nucleic acid templates attached to the beads. Also disclosed are kits and apparatuses for performing the methods of the invention.

Abstract: Provided herein are methods for correcting an error associated with phasic synchrony of sequence data generated from a population of template molecules by detecting signals generated in response to nucleotide species introduced during a sequencing reaction; generating an observed value for the signal detected from each of the nucleotide species; defining positive incorporation values and negative incorporation values from the observed values using a carry forward value and an incomplete extension value; revising the carry forward value and the incomplete extension value using a noise value derived from observed values associated with the negative incorporation values; re-defining the positive incorporation values and the negative incorporation values using the revised carry forward value and the revised incomplete extension value; and repeating the steps of revising and re-defining until convergence of the positive incorporation values and the negative incorporation values.

Abstract: Disclosed are a method and system for eliminating yellow ring phenomenon occurring on the white light emitting diode (LED) based on a blue light chip exciting yellow phosphor powders and having a packaging surface enclosing thereon. Lightspot images are repeatedly acquired outside the white LED, and then each analyzed to see if the yellow ring still exists on a lightspot. If yes, a further atomization process is performed on the packaging surface of white LED, until the acquired and analyzed image shows no yellow ring exists. A lightspot-by-lightspot basis is used in the yellow ring elimination task. In the image analysis, a look up table may be provided in advanced or established at the same time simultaneously with the yellow ring elimination task. The atomization performed on the lightspot may also consider a width issue.

Abstract: A call answering method integrating a social software application and a telephone answering interface is provided. The telephone is built-in with a telephone answering interface, a native address book and at least one social software application, and is installed with an integrated answering program. When the telephone receives a call request signal that an external caller transmits, the integrated answering program determines whether identity information the call request signal provides represents a social contact, and a social answering button corresponding to the social software application is displayed to quickly switch to the social software communication interface for text (short messages), graphic or file communication.

Abstract: The present invention is an image based oxygen saturation measuring device and method thereof. The method comprises steps of providing a plurality of red lights and a plurality of infrared lights arranged uniformly in an interlocked fashion and turned on alternatively; controlling the plurality of red lights and infrared lights to irradiate onto a selected skin area of a testee to have a red light turn-on period and an infrared light turn-on period; receiving a reflected version of the plurality of red lights and infrared lights from the selected skin area, respectively; and analyzing one reflected red light and one infrared light to acquire an oxygen saturation index for each of the coordination points. By means of the present invention, the measurement of oxygen saturation may be much exempted from effects brought from exterior interference and poor blood circulation, and may achieve a large measurement area in a single time.

Abstract: Some embodiments relate to an integrated circuit (IC) including one or more finFET devices. A finFET includes a fin of semiconductor material extending upwards from a semiconductor substrate. First and second source/drain regions, which have a first doping type, are spaced apart laterally from one another in the fin. A channel region is disposed in the fin and physically separates the first and second source/drain regions from one another. The channel region has a second doping type opposite the first doping type. A conductive gate electrode straddles the fin about the channel region and is separated from the channel region by a gate dielectric. A shallow doped region, which has the first doping type, is disposed near a surface of the fin around upper and sidewall fin regions. The shallow doped region extends continuously under the gate electrode between outer edges of the gate electrode.