Abstract: An antenna structure serving as a radar emitter with extended long range function comprises a radiating element comprised of radiating units connected in series by a feeder. Each two adjacent radiating units are spaced apart from each other by a specified distance. Lengths of the radiating units are same, and width of the radiating units gradually decreases from a center to ends. The feeder transmits a current signal to the radiating element. The radiating element emits a radar beam based on the current signal.

Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

Abstract: A composition for inhibiting a liver tumor in an organism is disclosed. The composition includes an activator being 1,2,3,4,6-penta-O-galloyl-Beta-D-glucopyranoside (PGG), wherein PGG is extracted from at least one of Paeonia lactiflora Pall. and Galla Chinesis.

Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

Abstract: A small-scale antenna structure with high gain and with controllable polarization direction includes a motherboard, an antenna array thereon, and antenna units. An array of lens units is superimposed directly over and covers the antenna units. A wireless communication device using the antenna structure is also provided. The wireless communication device includes a main body and the antenna structure. The main body receives the antenna structure.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

Abstract: An apparatus for semiconductor manufacturing includes an input port to receive a carrier, wherein the carrier includes a carrier body, a housing installed onto the carrier body, and a filter installed between the carrier body and the housing. The apparatus further includes a first robotic arm to uninstall the housing from the carrier and to reinstall the housing into the carrier; one or more second robotic arms to remove the filter from the carrier and to install a new filter into the carrier; and an output port to release the carrier to production.

Abstract: A tool-life prediction method, applicable to a machine tool having a machining end, includes steps of capturing a plurality of measurement data from a tool of the machining end, transforming each of the plurality of measurement data into a corresponding complex process capability index (Cpk), utilizing an artificial neural network being trained to generate a tool-life prediction scale with respect to the Cpk, and then based on the tool-life prediction scale to determine a remaining tool life of the tool. In addition, a tool life prediction system is also provided.

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure.

Abstract: An optical sub-assembly module and a cap thereof are provided. Two opposite ends of the cap are respectively defined as a light source end and a connecting end. The cap includes a receiving groove, a longitudinal groove, a lens structure and a plurality of pillar structures. The receiving groove is recessed inwardly from the light source end. The longitudinal groove is recessed inwardly from the connecting end. The lens structure is integrally formed with the cap, the lens structure is located between the receiving groove and the longitudinal groove, and the lens structure blocks spatial communication between the receiving groove and the longitudinal groove. Each of the pillar structures is connected to an inner wall that surrounds the receiving groove.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

Abstract: A method includes receiving a carrier with a plurality of wafers inside; supplying a purge gas to an inlet of the carrier; extracting an exhaust gas from an outlet of the carrier; and generating a health indicator of the carrier while performing the supplying of the purge gas and the extracting of the exhaust gas.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A tool-life prediction method, applicable to a machine tool having a machining end, includes steps of capturing a plurality of measurement data from a tool of the machining end, transforming each of the plurality of measurement data into a corresponding complex process capability index (Cpk), utilizing an artificial neural network being trained to generate a tool-life prediction scale with respect to the Cpk, and then based on the tool-life prediction scale to determine a remaining tool life of the tool. In addition, a tool life prediction system is also provided.

Abstract: An antenna structure suitable for 5G use in controlling direction of radio beams and in increasing antenna gain includes a substrate, an array of antennas, a main body, a lens array, a grounding plate, and a high-impedance surface (HIS) layer embedded into the substrate. The array of antenna units is positioned on the substrate surface under the protection of the main body. The lens array includes a lens units for each antenna unit, the lens units concentrate the beams generated by the antenna units. The grounding plate is underneath and grounds the antenna units. The HIS layer suppresses surface waves generated by the lens arrays and the substrate and increases a gain of the antenna structure in certain directions.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: An optical sub-assembly module and a cap thereof are provided. Two opposite ends of the cap are respectively defined as a light source end and a connecting end. The cap includes a receiving groove, a longitudinal groove, a lens structure and a plurality of pillar structures. The receiving groove is recessed inwardly from the light source end. The longitudinal groove is recessed inwardly from the connecting end. The lens structure is integrally formed with the cap, the lens structure is located between the receiving groove and the longitudinal groove, and the lens structure blocks spatial communication between the receiving groove and the longitudinal groove. Each of the pillar structures is connected to an inner wall that surrounds the receiving groove.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

Abstract: Disclosed herein are methods of detecting or making a risk evaluation of a cancer that has a mutated PREX2 expressed thereon. The cancer may be a primary cancer, a metastatic cancer or a recurrent cancer. According to the embodiment of the present disclosure, the mutation is G258V, S1113R, E1346D or K400fs. Also disclosed herein are methods of treating the subject in need thereof.