Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Abstract: An antenna structure serving as a radar emitter with extended long range function comprises a radiating element comprised of radiating units connected in series by a feeder. Each two adjacent radiating units are spaced apart from each other by a specified distance. Lengths of the radiating units are same, and width of the radiating units gradually decreases from a center to ends. The feeder transmits a current signal to the radiating element. The radiating element emits a radar beam based on the current signal.

Abstract: An antenna structure serving as an emitter in a radar device with optimized isolation of signal comprises antenna array as the radiating element. The antenna array includes array units. Each array unit includes radiating units connected by a feeder. Radiation area of each radiating unit gradually decreases from a center of array unit to ends of array unit. A specified distance is defined between centers of adjacent radiating units along an extending direction of the feeder. The feeder transmits a current signal to the array units, the radiating unit emits a radar scanning beam based on the current signal.

Abstract: A small-scale antenna structure with high gain and with controllable polarization direction includes a motherboard, an antenna array thereon, and antenna units. An array of lens units is superimposed directly over and covers the antenna units. A wireless communication device using the antenna structure is also provided. The wireless communication device includes a main body and the antenna structure. The main body receives the antenna structure.

Abstract: An antenna structure capable of transmitting radio waves in multiple polarizations is positioned on a circuit board. The circuit board includes upper and lower surfaces and peripheral side wall. The antenna structure includes a first antenna array, a second antenna array, and a control circuit. Each antenna unit of the first antenna array is positioned on one of the upper surface or the lower surface, a portion of each antenna unit of the second array is positioned on the peripheral side wall. The other portion of each antenna unit bended and positioned on at least one of the upper surface or the lower surface. In activating the first antenna array and the second antenna array the control circuit can generate radio transmissions in multiple polarizations. A wireless communication device is also provided.

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .

Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A cover film includes a release layer and a polyimide layer disposed on the release layer. The polyimide layer includes an inner surface and an outer surface opposite to the inner surface. The outer surface is exposed to the atmosphere, and the polyimide layer is formed from a reaction of a polyimide composition made of diamine monomer and tetracarboxylic dianhydride monomer. The polyimide layer further includes a cross-linker and an initiator. The diamine monomer is an aliphatic diamine monomer with a number of carbon greater than or equal to 36. A lowest viscosity of the polyimide layer is less than 20000 Pa·s when polyimide layer is under a temperature in a range of 60° C. to 160° C.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A method includes receiving a carrier with a plurality of wafers inside; supplying a purge gas to an inlet of the carrier; extracting an exhaust gas from an outlet of the carrier; and generating a health indicator of the carrier while performing the supplying of the purge gas and the extracting of the exhaust gas.

Abstract: A remote machining optimization system for a machine tool is provided, which includes an input unit configured to input a machining parameter including a spindle speed and a cut depth; a receiving unit configured to receive sound signals and vibration signals from the machine tool; a processing unit configured to generate a machining program with a program generating module, to modify the spindle speed and the cut depth according to the sound signals with a speed optimization module and a depth optimization module, respectively; a communication unit configured to send the machining program to the machine tool; and a storage unit configured to store the modified spindle speed and the cut depth.

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode.

Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

Abstract: The present invention is directed to a use of anti-fatigue probiotic bacteria for improving exercise performance, particularly the fatigue caused by exercise. The anti-fatigue probiotic bacteria increases muscle mass and endurance, decreases blood lactate, ammonia, and creatine kinase concentration, and changes body composition; the said bacteria can be used to improve exercise performance.

Abstract: A remote editing card printing system by using mobile handsets includes a card printer for printing cards having a specific size. The card printer includes a transformer for transferring instructions into machine codes for instructing a printing unit of the card printer to print cards with predetermine drawings or texts on cards; A layout editor installed on the electronic computer device; the layout editor causing a user to input printing instructions or layout instructions through an I/O device of the electronic computer device to edit a layout of a card and thus causing the printing unit to print the cards based on the layout and printing instructions. The layout editor may be installed on an electronic computer device or a cloud device, and an APP is installed on a handset to be connected to the layout editor so that a user may edit the instructions directly on the APP, or the layout editor is installed on the handset directly.

Abstract: A small form-factor pluggable (SFP) transceiver is provided for being inserted into an electrical connection slot of an electronic apparatus. The SFP transceiver includes a housing, two electrical signal connectors disposed a front end of the housing, and an unlocking assembly having an unlocking member and an interlock member. The housing includes an engaging portion disposed on a bottom surface thereof and configured to be engaged with the electrical connection slot, thereby firmly fastening the SFP transceiver into the electrical connection slot. The unlocking member has a manipulating portion exposed at the front end and arranged adjacent to a top surface of the housing. The interlock member is movably disposed on the housing. When the manipulating portion is rotated in a direction away from the front end and the top surface, the unlocking member moves the interlock member to separate the engaging portion from the electrical connection slot.

Abstract: A small form-factor pluggable transceiver includes a housing, which includes an upper cover, a lower cover fastened to the upper cover, and a front plate arranged between an end of the upper cover and an end of the lower cover. The front plate, the upper cover, and the lower cover are assembled together so as to jointly define an accommodating space. The front plate includes a metallic layer defining a main surface thereof and two plastic structures connected to the metallic layer. The front plate has two through holes penetrating through the metallic layer for respectively accommodating two electrical signal connectors, and the two plastic structures are respectively arranged in the two through holes. When the two electrical signal connectors are respectively disposed in the two through holes, the plastic structures are arranged between the metallic layer and the electrical signal connectors separated from the metallic layer.

Abstract: A light-emitting device comprises a semiconductor structure comprising a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first intermediate layer, a second intermediate layer, and an active region capable of emitting radiation, wherein the active region is between the first intermediate layer and the second intermediate layer, the first intermediate layer is in direct contact with the first conductivity-type semiconductor layer, the second intermediate layer is in direct contact with the second conductivity-type semiconductor layer, and the active region comprises alternated well layers and barrier layers, wherein each barrier layer has a thickness; wherein a first difference between a refractive index of the first intermediate layer and a refractive index of the first conductivity-type semiconductor layer is less than a second difference between a refractive index of the second intermediate layer and a refractive index of the second conductivity-type semiconduct

Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.