Abstract: A composition for promoting defecation includes a cell culture of at least one lactic acid bacterial strain which is substantially free of cells. The least one lactic acid bacterial strain is selected from the group consisting of Lactobacillus salivarius subsp. salicinius AP-32, Bifidobacterium animalis subsp. lactis CP-9, and Lactobacillus acidophilus TYCA06, which are respectively deposited at the Bioresource Collection and Research Center (BCRC) under accession numbers BCRC 910437, BCRC 910645 and BCRC 910813. Also disclosed is a method for promoting defecation, including administering to a subject in need thereof an effective amount of the composition.

Abstract: Disclosed herein are methods for improving gastrointestinal barrier function, alleviating a gastrointestinal barrier dysfunction-associated disorder, and inhibiting growth of enteric pathogenic bacteria using a composition containing Lactobacillus rhamnosus MP108, Bifidobacterium longum subsp. infantis BLI-02, and Bifidobacterium animalis subsp. lactis BB-115, which are deposited at the China General Microbiological Culture Collection Center (CGMCC) respectively under accession numbers CGMCC 21225, CGMCC 15212, and CGMCC 21840. A number ratio of Lactobacillus rhamnosus MP108, Bifidobacterium longum subsp. infantis BLI-02, and Bifidobacterium animalis subsp. lactis BB-115 ranges from 1:0.2:0.67 to 1:9:9.

Abstract: Provided is a polyamide foam molded body and method for manufacturing the same. The method includes performing polymerization with a monomer composition to form a polyamide terpolymer; mixing a supercritical carbon dioxide foaming agent and the polyamide terpolymer under a pressure to form a mixture; and releasing the pressure of the mixture to foam the polyamide terpolymer for forming the polyamide foam molded body. The monomer composition comprises 50 to 70 mole % of a caprolactam, 4 to 15 mole % of a polyetheramine, 4 to 15 mole % of a dicarboxylic acid and 15 to 30 mole % of a Nylon salt. The polyamide terpolymer includes a hard segment formed by the caprolactam, the dicarboxylic acid and the Nylon salt and a soft segment formed by the polyetheramine. The polyamide foam molded body exhibits excellent properties and is environmental-friendly.

Abstract: An information handling system with modular riser components for receiving expansion cards having various requirements. The system includes a riser body assembly having a common support structure for receiving expansion cards. The common support structure may be coupled to different expansion structures to provide support of expansion cards having requirements that would not be met by the common support structure alone.

Abstract: Provided are a circuit apparatus, a manufacturing method thereof, and a circuit system. The circuit apparatus includes a flexible circuit board, a flexible packaging material layer and an electronic device. The flexible circuit board has at least one hollow pattern, wherein the flexible circuit board has an inner region and a peripheral region surrounding the inner region, and has a first surface and a second surface opposite to each other. The flexible packaging material layer is disposed in the at least one hollow pattern. The electronic device is disposed on the first surface of the flexible circuit board and electrically connected with the flexible circuit board.

Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.

Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: A device and method for generating article markup information are provided. The method for generating article markup information includes the following. Segmentation processing is performed on an article to generate a segmentation result. Name entity recognition is performed on the segmentation result to generate a first recognition result. Whether the segmentation result includes any word in an expansion list is determined. Expanded entity classification conversion is performed on the first recognition result to generate a second recognition result. The second recognition result and the segmentation result are used as markup information.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.

Abstract: An installing module includes a seat bracket, a plurality of lower gaskets, a device bracket and an upper gasket. The seat bracket includes a first locking plate and a second locking plate locked to each other. The first locking plate includes a first concave and the second locking plate includes a second concave corresponding to the first concave. The lower gaskets are respectively disposed on the first concave and the second concave. The lower gaskets face each other and jointly define a lower assembly hole and are disposed on a lower side of a head-support fixer of a car seat. The device bracket is locked to the seat bracket and an electronic device is pivotally coupled to the device bracket. The upper gasket is disposed between the device bracket and the head-support fixer, and the head-support fixer is clamped between the upper gasket and the lower gaskets.

Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A method for producing ?-aminobutyric acid includes cultivating, in a culture medium containing glutamic acid or a salt thereof, a probiotic composition including at least one lactic acid bacterial strain selected from the group consisting of Bifidobacterium breve CCFM1025 which is deposited at the Guangdong Microbial Culture Collection Center under an accession number GDMCC 60386, Lactobacillus acidophilus TYCA06, Lactobacillus plantarum LPL28, and Bifidobacterium longum subsp. infantis BLI-02 which are deposited at the China General Microbiological Culture Collection Center respectively under accession numbers CGMCC 15210, CGMCC 17954, and CGMCC 15212, Lactobacillus salivarius subsp. salicinius AP-32 which is deposited at the China Center for Type Culture Collection under an accession number CCTCC M 2011127, and combinations thereof.

Abstract: Disclosed herein is a probiotic composition that includes Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9, which are deposited at the China Center for Type Culture Collection (CCTCC) respectively under accession numbers CCTCC M 2011127, CCTCC M 2011128, and CCTCC M 2014588. A number ratio of Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9 ranges from 1:0.1:0.1 to 1:1:8. Also disclosed herein is use of the probiotic composition for alleviating type 1 diabetes mellitus (T1DM).