Abstract: A multifunctional oxide based negative capacitance thin film transistor (NC-TFT) is built on glass or on flexible substrates, instead of on the single crystal substrates. It is therefore suitable for low-cost and large-area electronics, transparent electronics, or flexible electronics applications. The NC-TFT includes a semiconductor Magnesium Zinc Oxide (MZO) as the channel layer and a Nickel doped MZO ferroelectric material (NMZO) as the gate dielectric layer. Also disclosed are articles of manufacture methods of building the NC-TFT on glass and its transparent version NC-TTFT on glass.

Abstract: A method for identifying a risk pertaining to a transaction to be processed, includes: identifying a risk pertaining to a transaction to be processed via a fast identification layer in a risk control system, thereby obtaining a first identification result; identifying a risk of interference pertaining to the transaction to be processed via a model for identifying transactions susceptible to interference, thereby obtaining a second identification result; and determining a processing manner for the transaction to be processed based on the first identification result and the second identification result, the processing manner including releasing the transaction to be processed, or further identifying the risk pertaining to the transaction to be processed via the in-depth identification layer in the risk control system.

Abstract: Provided is a wiring device for a high-voltage connector for energy storage. The high-voltage connector for energy storage includes a socket and a plug. The socket comprises a socket body, a mounting flange, an electrical isolation groove, a fastening ring, a pin and an anti-electric shock cap. The plug comprises a plug main body, a pressing buckle, hand-held pluggable portions, a hammering boss, a jack, a crown spring, a wiring cup opening, and a locking slider, waterproof lock washer and protective back cover.

Abstract: A method for identifying a risk pertaining to a transaction to be processed, includes: identifying a risk pertaining to a transaction to be processed via a fast identification layer in a risk control system, thereby obtaining a first identification result; identifying a risk of interference pertaining to the transaction to be processed via a model for identifying transactions susceptible to interference, thereby obtaining a second identification result; and determining a processing manner for the transaction to be processed based on the first identification result and the second identification result, the processing manner including releasing the transaction to be processed, or further identifying the risk pertaining to the transaction to be processed via the in-depth identification layer in the risk control system.

Abstract: Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 ?A, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.

Abstract: Embodiments of the present disclosure disclose identity verification methods, apparatuses, electronic devices, and storage media. In an embodiment, an identity verification method includes: receiving an identity verification request for verifying an identity of a user; determining that the user is an inactive user based on a user service variable value; determining at least one risk level of the user based on at least one user identification method; and determining a user identity verification method based on the at least one risk level and at least one identity verification threshold corresponding to the at least one user identification method, wherein the user identity verification method is one of a strong user identity verification method or a weak user identity verification method.

Abstract: This document discloses a hybrid and multifunctional biosensing technology consisting of a dual gate thin-film transistor (DGTFT) biosensor with an extended gate covered with magnesium zinc oxide nanostructures (MZOnano) and an MZOnano modified bulk acoustic wave resonator (MZOnano BAW). The technology is used for the full-scale dynamic monitoring of bacterial biofilm formation from its early stage to the maturation stage.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for a scan-to-pay method are provided. One of the methods includes: receiving a payment request from an operator of a mobile device; and generating a payment code based on the payment request, wherein the payment code comprises first information and second information, with the first information associated with an payment account, and the second information associated with at least one recent behavioral biometric signature of the operator and at least one historical behavioral biometric signature recorded in the mobile device. This scan-to-pay method provides robust risk control with substantially reduced cost, therefore it provides a more friendly user experience on a scan-to-pay application over its conventional counterparts.

Abstract: Embodiments of the present disclosure disclose identity verification methods, apparatuses, electronic devices, and storage media. In an embodiment, an identity verification method includes: receiving an identity verification request for verifying an identity of a user; determining that the user is an inactive user based on a user service variable value; determining at least one risk level of the user based on at least one user identification method; and determining a user identity verification method based on the at least one risk level and at least one identity verification threshold corresponding to the at least one user identification method, wherein the user identity verification method is one of a strong user identity verification method or a weak user identity verification method.

Abstract: Embodiments are directed to a flexible high voltage thin film transistor (f-HVTFT) with a center-symmetric circular configuration. The f-HVTFT includes a ring-shaped oxide semiconductor channel, a ring-shaped gate, a ring-shaped source, and a circular drain. The source and gate each have multiple connections to respective electrode pads, enabling stable and identical electrical characteristics and blocking voltage while the f-HVTFT is subject to bending from random directions. The f-HVTFT enables a high blocking voltage over 100 V, on-current over 100 ?A, and low off-current of 0.1 pA, which makes it suitable for power management of self-powered wearable electronic systems.

Abstract: A magnesium zinc oxide (MZO) nanostructure modified quartz crystal microbalance (MZOnano-QCM) takes advantage of the unique sensing ability and biocompatibility of MZO-based nanostructures, and combines them with the dynamic impedance spectrum capability of the bulk acoustic wave (BAW) devices including QCM, to form a real-time, noninvasive and label-free cell monitoring biosensor, specifically detecting the susceptibility and resistance of bacterial and fungal strains and cancer cells to various antibiotic and antifungal drugs and anticancer drugs, respectively.

Abstract: A method for identifying a risk pertaining to a transaction to be processed, includes: identifying a risk pertaining to a transaction to be processed via a fast identification layer in a risk control system, thereby obtaining a first identification result; identifying a risk of interference pertaining to the transaction to be processed via a model for identifying transactions susceptible to interference, thereby obtaining a second identification result; and determining a processing manner for the transaction to be processed based on the first identification result and the second identification result, the processing manner including releasing the transaction to be processed, or further identifying the risk pertaining to the transaction to be processed via the in-depth identification layer in the risk control system.

Abstract: Magnesium Zinc Oxide (MZO)—based high voltage thin film transistor (MZO-HVTFT) is built on a transparent substrate, such as glass. The device has the circular drain and ring-shaped source and gate to reduce non-uniformity of the electric field distribution. Controlled Mg doping in the channel and modulated Mg doping in a transition layer located at the channel-gate dielectric interface improve the device's operating stability and increase its blocking voltage capability over 600V. The MZO HVTFT can be used for fabricating the micro-inverter in photovoltaic system on glass (PV-SOG), and for self-powered smart glass.

Abstract: A method for identifying a risk pertaining to a transaction to be processed, includes: identifying a risk pertaining to a transaction to be processed via a fast identification layer in a risk control system, thereby obtaining a first identification result; identifying a risk of interference pertaining to the transaction to be processed via a model for identifying transactions susceptible to interference, thereby obtaining a second identification result; and determining a processing manner for the transaction to be processed based on the first identification result and the second identification result, the processing manner including releasing the transaction to be processed, or further identifying the risk pertaining to the transaction to be processed via the in-depth identification layer in the risk control system.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for a scan-to-pay method are provided. One of the methods includes: receiving a payment request from an operator of a mobile device; and generating a payment code based on the payment request, wherein the payment code comprises first information and second information, with the first information associated with an payment account, and the second information associated with at least one recent behavioral biometric signature of the operator and at least one historical behavioral biometric signature recorded in the mobile device. This scan-to-pay method provides robust risk control with substantially reduced cost, therefore it provides a more friendly user experience on a scan-to-pay application over its conventional counterparts.

Abstract: Magnesium Zinc Oxide (MZO)—based high voltage thin film transistor (MZO-HVTFT) is built on a transparent substrate, such as glass. The device has the circular drain and ring-shaped source and gate to reduce non-uniformity of the electric field distribution. Controlled Mg doping in the channel and modulated Mg doping in a transition layer located at the channel-gate dielectric interface improve the device's operating stability and increase its blocking voltage capability over 600V. The MZO HVTFT can be used for fabricating the micro-inverter in photovoltaic system on glass (PV-SOG), and for self-powered smart glass.

Abstract: A magnesium zinc oxide (MZO) nanostructure modified quartz crystal microbalance (MZOnano-QCM) takes advantage of the unique sensing ability and biocompatibility of MZO-based nanostructures, and combines them with the dynamic impedance spectrum capability of the bulk acoustic wave (BAW) devices including QCM, to form a real-time, noninvasive and label-free cell monitoring biosensor, specifically detecting the susceptibility and resistance of bacterial and fungal strains and cancer cells to various antibiotic and antifungal drugs and anticancer drugs, respectively.

Abstract: A ZnO based display pixel structure that includes system-on-glass (SOG) substrates with embedded non-volatile resistive random access memory iNV-RRAM) is provided. Such pixels feature high frame rates and low power consumption. The entire SOG is based on ZnO devices. Different devices including TFT, TCO, RRAM, inverters, and shift registers are obtained through doping of different elements into selected ZnO active regions. This reduces the cost to package control circuitry onto a backplane of a display system, resulting in a low cost, light weight and uUra-thin display.

Abstract: A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.

Abstract: A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.