Abstract: This application discloses ZnO film transistor-based immunosensors (ZnO-bioTFT), 2T biosensor arrays formed from two integrated ZnO-bioTFTs, 1T1R-based nonvolatile memory (NVM) arrays formed from ZnO-bioTFT (T) integrated with ZnO-based resistive switches (R), as well as integrated bioTFT (IBTFT) sensor systems formed from 2T biosensor arrays and 1T1R NVM arrays. Through biofunctionalization, these biosensors can perform immunosensing with high sensitivity and selectivity, and therefore have a wide range of applications, for example, in detecting target biomolecules or small molecules, and potential application in cancer diagnosis and treatment.

Abstract: A ZnO based display pixel structure that includes system-on-glass (SOG) substrates with embedded non-volatile resistive random access memory iNV-RRAM) is provided. Such pixels feature high frame rates and low power consumption. The entire SOG is based on ZnO devices. Different devices including TFT, TCO, RRAM, inverters, and shift registers are obtained through doping of different elements into selected ZnO active regions. This reduces the cost to package control circuitry onto a backplane of a display system, resulting in a low cost, light weight and uUra-thin display.

Abstract: A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.

Abstract: A substrate-supported photoelectrode, which includes an essentially two-dimensional transparent conductive oxide (TCO) film supported by a substrate, wherein the film is doped with at least one element of Group III, and one or more single crystal essentially one-dimensional nanostructures that are integral with the film and grown upwardly therefrom without a boundary layer therebetween, wherein the film and the nanostructures are essentially identical in composition and include zinc oxide or a zinc oxide alloy. Methods for preparing the substrate-supported photoelectrode and solar cells incorporating the substrate-supported photoelectrode are also provided.

Abstract: A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.

Abstract: A dynamic and noninvasive method of monitoring the adhesion and proliferation of biological cells through multimode operation (acoustic and optical) using a ZnO nanostructure-modified quartz crystal microbalance (ZnOnano-QCM) biosensor is disclosed.

Abstract: A dynamic and noninvasive method of monitoring the adhesion and proliferation of biological cells through multimode operation (acoustic and optical) using a ZnO nanostructure-modified quartz crystal microbalance (ZnOnano-QCM) biosensor is disclosed.

Abstract: A Light Emitting Diode (LED) formed on a substrate of a material selected from at least one of a semiconductor, an insulator and a metal; at least one semiconductor film layer of ZnO or GaN deposited on the substrate; a nanotips array of ZnO or its ternary compound, the array being grown either directly or indirectly on a surface of at least one semiconductor film layer; at least one transparent and conductive oxide (TCO) layer deposited on at least one semiconductor film layer; and a semiconductor p-n junction under a forward bias voltage.

Abstract: The present invention provides the multifunctional biological and biochemical sensor technology based on the integration of ZnO nanotips with bulk acoustic wave (BAW) devices, particularly, quartz crystal microbalance (QCM) and thin film bulk acoustic wave resonator (TFBAR). ZnO nanotips provide giant effective surface area and strong bonding sites. Furthermore, the controllable wettability of ZnO nanostructured surface dramatically reduces the liquid consumption and enhances the sensitivity of the biosensor device.

Abstract: The present invention provides the multifunctional biological and biochemical sensor technology based on the integration of ZnO nanotips with bulk acoustic wave (BAW) devices, particularly, quartz crystal microbalance (QCM) and thin film bulk acoustic wave resonator (TFBAR). ZnO nanotips provide giant effective surface area and strong bonding sites. Furthermore, the controllable wettability of ZnO nanostructured surface dramatically reduces the liquid consumption and enhances the sensitivity of the biosensor device.

Abstract: A method and apparatus for creating and detecting an optically encoded document having a uniquely designed document verification indicator is disclosed. One embodiment includes applying a spatially varying Brewster angle pattern on a substrate. Another embodiment includes an apparatus for detecting the spatially varying Brewster angle pattern including a light source, a slit aperture, a polarizer, at least one parabolic mirror, and an image capturing device.

Abstract: A method and apparatus for creating and detecting an optically encoded document having a uniquely designed document verification indicator is disclosed. One embodiment includes applying a spatially varying Brewster angle pattern on a substrate. Another embodiment includes an apparatus for detecting the spatially varying Brewster angle pattern including a light source, a slit aperture, a polarizer, at least one parabolic mirror, and an image capturing device.

Abstract: A Light Emitting Diode (LED) formed on a substrate of a material selected from at least one of a semiconductor, an insulator and a metal; at least one semiconductor film layer of ZnO or GaN deposited on the substrate; a nanotips array of ZnO or its ternary compound, the array being grown either directly or indirectly on a surface of at least one semiconductor film layer; at least one transparent and conductive oxide (TCO) layer deposited on at least one semiconductor film layer; and a semiconductor p-n junction under a forward bias voltage.

Abstract: In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.

Abstract: A substrate-supported photoelectrode, which includes an essentially two-dimensional transparent conductive oxide (TCO) film supported by a substrate, wherein the film is doped with at least one element of Group III, and one or more single crystal essentially one-dimensional nanostructures that are integral with the film and grown upwardly therefrom without a boundary layer therebetween, wherein the film and the nanostructures are essentially identical in composition and include zinc oxide or a zinc oxide alloy. Methods for preparing the substrate-supported photoelectrode and solar cells incorporating the substrate-supported photoelectrode are also provided.

Abstract: The present invention provides the multifunctional biological and biochemical sensor technology based on the integration of ZnO nanotips with bulk acoustic wave (BAW) devices, particularly, quartz crystal microbalance (QCM) and thin film bulk acoustic wave resonator (TFBAR). ZnO nanotips provide giant effective surface area and strong bonding sites. Furthermore, the controllable wettability of ZnO nanostructured surface dramatically reduces the liquid consumption and enhances the sensitivity of the biosensor device.

Abstract: ZnO nanostructure-based LEDs are provided to improve the emission efficiency. The devices include several configurations. Single crystal ZnO or MgxZn1?xO nanotips are grown on the top of a GaN p-n junction. Also, n-type ZnO nanotips are grown on p-GaN film to form an n-type ZnO nanotip/p-GaN heterojunction LED. A ZnO LED can be formed when depositing n-type ZnO nanotips on a p-type ZnO film layer. The ZnO nanotips, with a p-n junction in the tips, can be grown on glass for a low cost nano-LED, and can be grown on Si substrates to form an integrated ZnO nanoLED array on Si chips.

Abstract: In the present invention, there are provided self-assembled ZnO nanotips grown on relatively low temperatures on various substrates by metalorganic chemical vapor deposition (MOCVD). The ZnO nanotips are made at relatively low temperatures, giving ZnO a unique advantage over other wide bandgap semiconductors such as GaN and SiC. The nanotips have controlled uniform size, distribution and orientation. These ZnO nanotips are of single crystal quality, show n-type conductivity and have good optical properties. Selective growth of ZnO nanotips also has been realized on patterned (100) silicon on r-sapphire (SOS), and amorphous SiO2 on r-sapphire substrates. Self-assembled ZnO nanotips can also be selectively grown on patterned layers or islands made of a semiconductor, an insulator or a metal deposited on R-plane (01 12) Al2O3 substrates as long as the ZnO grows in a columnar structure along the c-axis [0001] of ZnO on these materials.

Abstract: Thin film bulk acoustic wave sensors with coatings of biological and chemical materials, multiple electrode depositions and a piezo-active thin film transducer layer are hosted on a substrate. The thin film bulk acoustic wave sensor suite, or T-BASS, produces a low-voltage, IC-compliant thickness-directed electric field that is substantially uniform over a substantial portion of the active area of the BAW structure. The BAWs produced are essentially extensional plane waves propagating away from the substrate surface and having phase progression substantially oblique to the substrate surface. For BAW applications requiring sensing by an active layer, it would be most desirable to have an electrode structure that is both IC-compliant and can be energized from a low-voltage source of electrical energy. The thin film BAW sensors are compatible with IC fabrication and processing techniques, such as photolithography. Both single channel and multiple channel thin film bulk acoustic wave sensors are provided.

Abstract: An Interdigital Bulk Acoustic-Wave Transducer (IBAT) device is provided with pairs of exciting electrode fingers disposed sufficiently close together on the piezoelectric substrate and dielectric coating over the exciting electrode fingers to generate an IC-compatible voltage at relatively high electric field strength, resulting in a reduced region of excitation and uniform electric field strength distribution. The IBAT advantageously produces a lateral electric field substantially uniform over a substantial portion of the active BAW structure area, reducing, or virtually eliminating sharp voltage spikes, an electrical field produced by the low voltages resident on integrated circuit (IC) chips, usually of a magnitude of 10 volts, or lower, the planar electrode structure being compatible with IC processing techniques, such as photolithography and the BAWs produced thereby being essentially plane waves, with propagation away from, but with phase progression substantially parallel to, the substrate surface.