Abstract: Provided is a method of performing three-dimensional (3D) graphics geometric transformation using a parallel processor having a plurality of Processing Elements (PEs). The method includes performing model/view transformation and projection transformation on a first group of vertex vectors using the parallel processor; calculating a value used for quaternion correction of the first group of vertex vectors using a general-use processor, and simultaneously performing model/view transformation and projection transformation on a second group of vertex vectors; performing quaternion correction and screen mapping on the first group of vertex vectors, and simultaneously calculating a value used for quaternion correction of the second group of vertex vectors using the general-use processor; and performing quaternion correction and screen mapping on the second group of vertex vectors.

Abstract: Provided is a parallel processor for supporting a floating-point operation. The parallel processor has a flexible structure for easy development of a parallel algorithm involving multimedia computing, requires low hardware cost, and consumes low power. To support floating-point operations, the parallel processor uses floating-point accumulators and a flag for floating-point multiplication. Using the parallel processor, it is possible to process a geometric transformation operation in a 3-dimensional (3D) graphics process at low cost. Also, the cost of a bus width for instructions can be minimized by a partitioned Single-Instruction Multiple-Data (SIMD) method and a method of conditionally executing instructions.

Abstract: Provided are an apparatus and method for calculating a Sum of Absolute Differences (SAD) for motion estimation of a variable block capable of parallelly calculating SAD values with respect to a plurality of current frame macroblocks at a time. The apparatus includes a PE array unit including at least one Processing Element (PE) that is aligned in the form of a matrix, and parallelly calculating a SAD value of at least one pixel provided in a plurality of serial current frame macroblocks, a local memory including current frame macroblock data, reference frame macroblock data, and reference frame search area data, and transmitting the data to each PE that is provided in the PE array unit, and a controller for making a command for the data that are provided in the local memory to be transmitted corresponding to at least one pixel, on which each PE provided in the PE array unit performs calculation.

Abstract: A high-reliability, multi-threshold complementary metal oxide semiconductor (CMOS) latch circuit is presented that uses both low and high threshold inverters. The multi-threshold latch circuit includes: a low threshold forward clock inverter inverting an input-terminal logic state and applying the inverted logic state to an output-terminal logic state when a clock is in a first logic state; and a high threshold backward clock inverter forming a circular latch structure together with the forward clock inverter, and inverting an input-terminal logic state and applying the inverted logic state to an output logic state when the clock is in a second logic state.

Abstract: Provided is a source driver circuit for an active matrix electroluminescent (EL) display including a digital-to-analog converter/ramp circuit for converting a digital signal into an analog signal, and generating a ramp signal in this process, simultaneously, whereby high degree of integration would be possible since a conventional complicated circuit is not required and gray scale with the high characteristic can be implanted, regardless of a change of a temperature or a threshold voltage.

Abstract: Provided is a multi-threshold complementary metal oxide semiconductor (MTCMOS) latch circuit including: a data inverting circuit for inverting and outputting input data under the control of a sleep control signal; a transmission gate for transferring the data signal output from the data inverting circuit under the control of a clock control signal; a signal control circuit for outputting the data signal output from the transmission gate under the control of a reset control signal and the sleep control signal; and a feedback circuit for feeding back the signal output from the signal control circuit and preserving the data in a sleep mode. The MTCMOS latch circuit can minimize power consumption caused by a leakage current due to elements scaled down to nano scale and also contribute to high-speed operation of a logic circuit by using an element having a low threshold voltage.

Abstract: Disclosed is a low power and high density source driver and a current driven active matrix organic electroluminescent device having the same, in which all elements operate at a normal voltage and all circuits of the source driver are shielded from a high voltage of a panel.

Abstract: Provided is a low-power clock gating circuit using a Multi-Threshold CMOS (MTCMOS) technique. The low-power clock gating circuit includes a latch circuit of an input stage and an AND gate circuit of an output stage, in which power consumption caused by leakage current in the clock gating circuit is reduced in a sleep mode, and supply of a clock to a unused device of a targeted logic circuit is prevented by the control of a clock enable signal in an active mode, thereby reducing power consumption. The low-power clock gating circuit using an MTCMOS technique uses devices having a low threshold voltage and devices having a high threshold voltage, which makes it possible to implement a high-speed, low-power circuit, unlike a conventional clock gating circuit using a single threshold voltage.

Abstract: Provided is a single instruction multiple data (SIMD) parallel processor including a plurality of processing units connected to one another. Each processing unit includes: an instruction register; an instruction decoder; a register files selection circuit; and register files. The SIMD parallel processor can selectively control data of register files required for any one of SIMD, single instruction single data (SISD), row, and column operations in response to an instruction. Since each of the SIMD, SISD, row, and column operations can be effectively performed according to the type of application, the SIMD parallel processor has excellent utility, efficiency, and flexibility.

Abstract: Provided are a multi-gate MOS transistor and a method of manufacturing the same. Two silicon fins are vertically stacked on a silicon on insulator (SOI) substrate, and four side surfaces of an upper silicon fin and three side surfaces of a lower silicon fin are used as a channel. Therefore, a channel width is increased, so that current driving capability of a device is improved, and high performance nano-level semiconductor IC and highly integrated memory IC can be manufactured through the optimization and stability of a process.

Abstract: Provided is a highly energy-efficient processor architecture. The architecture employs 2-stage dynamic voltage scaling (DVS) and a sleep mode for high energy efficiency, dynamically controls the power supply voltage and activation of an embedded processor with instructions, and thus can prevent performance deterioration while reducing power consumption.

Abstract: Provided is a pixel driving circuit including a threshold voltage compensation circuit. The pixel driving circuit includes a diode-connected type first transistor through which input current data flows; a second transistor copying the current data flowing through the first transistor; a third transistor connected in series to the second transistor; a fourth transistor diode-connected between a power supply voltage terminal and the third transistor; and a driving transistor connected to the power supply voltage terminal, copying the current data flowing through the third transistor, and providing the data to a light emitting diode. Since the pixel driving circuit compensates for variation in the threshold voltage of the driving transistor driving each pixel, brightness uniformity of pixels according to applied current data can be maintained.

Abstract: Provided is a multi-threshold complementary metal oxide semiconductor (MTCMOS) latch circuit including: a data inverting circuit for inverting and outputting input data under the control of a sleep control signal; a transmission gate for transferring the data signal output from the data inverting circuit under the control of a clock control signal; a signal control circuit for outputting the data signal output from the transmission gate under the control of a reset control signal and the sleep control signal; and a feedback circuit for feeding back the signal output from the signal control circuit and preserving the data in a sleep mode. The MTCMOS latch circuit can minimize power consumption caused by a leakage current due to elements scaled down to nano scale and also contribute to high-speed operation of a logic circuit by using an element having a low threshold voltage.

Abstract: Provided is a data bus system for a micro controller which has an input/output (I/O) unit, a central processing unit (CPU), an internal memory unit, and a peripheral circuitry. The data bus system includes an external access bus used when data is output from the CPU or data is input to the I/O unit or the internal memory unit; an internal access bus used when data is input to the CPU, data is output from the I/O unit or the internal memory unit, or data is input to or output from the peripheral circuitry; and an internal memory test bus used when data is output from the internal memory unit and input to the I/O unit.

Abstract: The present invention relates to structures of a high voltage device and a low voltage device formed on a SOI substrate and a method for manufacturing the same, and it is characterized in which the low voltage device region of silicon device regions in a SOI substrate is higher than the high voltage device region by steps, and a thickness of the silicon device region, where the high voltage device is formed, is equal to a junction depth of impurities of a source and drain in the low voltage device. Accordingly, silicon device regions in the SOI substrate are divided into the high voltage region and the low voltage region and steps are formed there between by oxidation growth method, so that the high voltage device having low junction capacitance can be made, and the low voltage device compatible with the conventional CMOS process and device characteristics can also be made at the same time.

Abstract: The present invention relates to a method of fabricating a high-voltage high-power integrated circuit device using a substrate of a SOI structure in which an insulating film and a silicon layer are sequentially stacked on a silicon substrate.

Abstract: Disclosed is a low power and high density source driver and a current driven active matrix organic electroluminescent device having the same, in which all elements operate at a normal voltage and all circuits of the source driver are shielded from a high voltage of a panel.

Abstract: The MOS transistor of the present invention is manufactured by a conventional complementary MOS transistor technology. In the manufacturing method of the MOS transistor having nanometer dimensions, a gate having dimensions at a nanometer scale can be formed through control of the width of spacers instead of with a specific lithography technology. The doped spacers are used for forming source/drain extension regions having an ultra-shallow junction, thereby avoiding damage on the substrate caused by ion implantation. In addition, a dopant is diffused from the doped space into a semiconductor substrate through annealing to form the source/drain extension regions having an ultra-shallow junction.

Abstract: Provided is a data bus system for a micro controller which has an input/output (I/O) unit, a central processing unit (CPU), an internal memory unit, and a peripheral circuitry. The data bus system includes an external access bus used when data is output from the CPU or data is input to the I/O unit or the internal memory unit; an internal access bus used when data is input to the CPU, data is output from the I/O unit or the internal memory unit, or data is input to or output from the peripheral circuitry; and an internal memory test bus used when data is output from the internal memory unit and input to the I/O unit.

Abstract: The present invention relates to an input and output port circuit. The input and output port circuit comprises a signal register for storing output signals, an input/output register at which an input/output control signal for determining an input/output direction is stored, a plurality of control registers, a power supply switch circuit for selectively supplying a low voltage or a high voltage depending on a power mode control signal, a signal direction control circuit for determining the direction of the signal depending on a value of the signal register and a value of the input/output register, an output control circuit driven depending on the value of the control register and an output of the signal direction control circuit, and an output driving circuit for outputting the low voltage, the high voltage or the ground value depending on an output of the signal direction control circuit and an output of the output control circuit.