Abstract: A composite recording structure comprising a first magnetic free layer comprising an amorphous magnetic material sub-layer, a Boron-absorbing material sub-layer atop the amorphous magnetic material sub-layer and a Co/Ni superlattice sub-layer atop the Boron-absorbing material sub-layer; one or many repeats of a substructure including a nonmagnetic spacing layer and a Co/Ni superlattice free layer, atop the first magnetic free layer, wherein said first magnetic free layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, said each Co/Ni superlattice free layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface.

Abstract: A method of forming a bottom-pinned magnetoresistive element comprising a composite recording structure that includes a first magnetic free layer and a second magnetic free layer containing Ni atoms, separated by an oxide spacing layer. The first magnetic free layer is Ni-free and the first magnetic free layer and the second magnetic free layer are magnetically parallel-coupled. A magnetic STT-enhancing structure is further provided atop the cap layer, wherein the magnetic STT-enhancing structure comprises a first magnetic material layer atop the cap layer and having a perpendicular magnetic anisotropy and an invariable magnetization anti-parallel to the magnetization direction of the reference layer, a second anti-ferromagnetic coupling (AFC) layer atop the first magnetic material layer, and a second magnetic material layer atop the second AFC layer.

Abstract: A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.

Abstract: A magnetoresistive element comprises a novel iPMA cap layer on a surface of a ferromagnetic recording layer. The iPMA cap layer introduces giant interfacial magnetic anisotropy energies (G-iMAE) on the interface between the recording layer and the iPMA cap layer, yielding a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer.

Abstract: The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

Abstract: A method of manufacturing a plurality of magnetoresistive memory element having a dielectric thermal buffer layer between a thin top electrode of the magnetic tunnel junction (MTJ) element and a bit line, and a bit-line VIA electrically connecting the top electrode and the bit line having a vertical distance away from the location of the MTJ stack. In a laser thermal annealing, a short wavelength of a laser has a shallow thermal penetration depth and a high thermal resistance from the bit line to the MTJ stack only causes a temperature rise of the MTJ stack being much smaller than that of the bit line. As the temperature of the MTJ element during the laser thermal annealing of bit line copper layer is controlled under 300-degree C., possible damages on MTJ and magnetic property can be avoided.

Abstract: The invention comprises a novel composite seed structure (CSS) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

Abstract: The invention disclosed a method to make hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory, for example, a magnetic-random-access memory (MRAM), a resistance random access memory (RRAM), a phase change random access memory (PCRAM), or a ferroelectric random access memory (FRAM). Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining (HMS) layer is added below PTM. Using PTM as the mask, array of HM ditches are first formed in the HMS layer to implant a hard mask seed in it before filling the main portion of the hard mask in the PTM VIAs.

Abstract: A spin-transfer-torque magnetoresistive memory comprises apparatus and method of manufacturing a three terminal magnetoresistive memory element having highly conductive bottom electrodes overlaid on top of a SHE-metal layer in the regions outside of an MTJ stack. The memory cell comprises a bit line positioned adjacent to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two highly conductive bottom electrodes overlaid and electrically contacting on top of a SHE-metal layer in the outside of an MTJ region and to supply a bi-directional spin Hall effect recording current, and accordingly to switch the magnetization of the recording layer. Thus magnetization of a recording layer can be readily switched or reversed to the direction in accordance with a direction of a current along the SHE-metal layer by applying a low write current.

Abstract: The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

Abstract: A magnetoresistive element comprises a nonmagnetic sidewall-current-channel (SCC) structure provided on a surface of the magnetic recording layer, which is opposite to a surface of the magnetic recording layer where the tunnel barrier layer is provided, and comprising an insulating medium in a central region of the SCC structure, and a conductive medium being a sidewall of the SCC structure and surrounding the insulating medium, making an electric current crowding inside the magnetic recording layer to achieve a higher spin-polarization degree for an applied electric current.

Abstract: A magnetoresistive element comprises a nonmagnetic sidewall-current-channel (SCC) structure provided on a surface of the SOT material layer that exhibits the Spin Hall Effect, which is opposite to a surface of the SOT material layer where the magnetic recording layer is provided, and comprising an insulating medium in a central region of the SCC structure, and a conductive medium being a sidewall of the SCC structure and surrounding the insulating medium, making an electric current crowding inside the SOT material layer and the magnetic recording layer to achieve a spin-orbit torque and a higher spin-polarization degree for an applied electric current.

Abstract: The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

Abstract: An ultra-fast magnetic random access memory (MRAM) comprises a three terminal composite SOT magnetic tunneling junction (CSOT-MTJ) element including a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such MRAM-SE will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU.

Abstract: An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer.

Abstract: A method to make magnetic random access memory with small footprint using O-ion implantation to form electrically isolated memory pillar and electric (bottom and top) leads, which are made from some oxygen gettering materials, Mg, Zr, Y, Th, Ti, Al, Ba. The doped O-ions react with metal atoms to form fully oxidized metal oxide after high temperature anneal. The method only needs two photolithography patterning and oxygen implantations and no etch and dielectric refill are needed, thus significantly reduce process cost. The method can produce extremely small MRAM cell size with perfectly vertical pillar edges (FIG. 1).

Abstract: The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

Abstract: The present invention discloses an enhanced synthetic antiferromagnetic (eSAF) element with a very strong RKKY coupling comprising a magnetic pinning layer having a face-center-cubic (fcc) crystalline structure and a magnetic reference layer having a body-center-cubic (bcc) crystalline structure which are antiferromagnetically coupled by a composite non-magnetic spacer (CnmS) containing a bi-layer of (Ru, Rh or Ir)/Cr or tri-layer of (Ru, Rh, or Ir)/(W, Mo, or V)/Cr. With such eSAF, a strong magnetic pinning element is formed which can be used to make various thin STT-MRAM film stacks with good thermal and magnetic stability while maintaining high TMR value.

Abstract: The present invention discloses an enhanced synthetic antiferromagnetic (eSAF) element with a very strong RKKY coupling comprising a magnetic pinning layer having a face-center-cubic (fcc) crystalline structure and a magnetic reference layer having a body-center-cubic (bcc) crystalline structure which are antiferromagnetically coupled by a composite non-magnetic spacer (CnmS) containing a bi-layer of (Ru, Rh or Ir)/Cr or tri-layer of (Ru, Rh, or Ir)/(W, Mo, or V)/Cr. With such eSAF, a strong magnetic pinning element is formed which can be used to make various thin STT-MRAM film stacks with good thermal and magnetic stability while maintaining high TMR value.

Abstract: The invention discloses a magnetic random access memory (MRAM) storage element and a magnetic random access memory. The MRAM storage element has a stack structure formed by subsequently stacking a reference layer, a tunnel barrier layer, a first free layer, a perpendicular magnetic coupling layer, a second free layer, and a magnetic damping barrier layer. The magnetization vector in the second free layer is perpendicular to the film surface, and is parallel to the magnetization in the first free layer through parallel magnetic coupling to the first free layer. The perpendicular magnetic coupling layer is used to achieve a strong magnetic coupling between the first free layer and the second free layer and to provide additional interface perpendicular magnetic anisotropies for both the first free layer and the second free layer.