Abstract: A method for making an infrared light absorber is provided, and the method includes following steps: providing a first carbon nanotube array on a substrate; truncating the carbon nanotube array by irradiating a top surface of the carbon nanotube array by a laser beam in two directions, the top surface being away from the substrate, wherein the two directions being at an angle, the angle is in a range of 30 degrees to 90 degrees.

Abstract: An infrared detector is provided, and the infrared detector includes: a thermoelectric element; an infrared light absorber, located on and in contact with the thermoelectric element, and configured to absorb infrared light and convert infrared light into heat; an electrical signal detector, electrically connected to the thermoelectric element and configured to detect a change in electrical performance of the thermoelectric element; wherein the infrared light absorber includes a carbon nanotube array, the carbon nanotube array includes a plurality of carbon nanotubes, a height of the plurality of carbon nanotubes are substantially the same, and the plurality of carbon nanotubes are perpendicular to the thermoelectric element.

Abstract: A method for making an infrared light absorber is provided, and the method includes following steps: providing a carbon nanotube array on a substrate; truncating the carbon nanotube array by dry etching a top surface of the carbon nanotube array, the top surface being away from the substrate, the carbon nanotube array comprises a plurality of carbon nanotubes substantially parallel with each other, the plurality of carbon nanotubes in the carbon nanotube array are truncated to a height in a range of 100 micrometers to 300 micrometers.

Abstract: A method for making a graphene adhesive film includes the following steps: growing a graphene on a growth substrate, wherein the material of the growth substrate is copper; depositing an adhesive layer on a surface of the graphene away from the growth substrate, to form an adhesive/graphene/growth substrate composite structure; and removing the growth substrate from the adhesive/graphene/growth substrate composite structure with an etching solution, wherein the etching solution is a mixture of hydrogen peroxide, hydrochloric acid, and deionized water.

Abstract: A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode; the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.

Abstract: A method for making carrier for use in single molecule detection is related. The method includes following steps: firstly, placing a middle layer on a substrate; secondly, providing a carbon nanotube composite structure, wherein the carbon nanotube composite structure includes a carbon nanotube structure and a protective layer coated on the carbon nanotube structure, the carbon nanotube structure includes a plurality of carbon nanotubes intersected with each other and defines a plurality of openings; thirdly, placing the carbon nanotube composite structure on a surface of the middle layer, wherein parts of the surface are exposed through the plurality of openings; fourthly, forming the patterned bulge by dry etching the middle layer using the carbon nanotube composite structure as a mask, wherein the patterned bulge includes a plurality of strip-shaped bulges intersected with each other; depositing the metal layer on the patterned bulge.

Abstract: A carrier for use in single molecule detection is related. The carrier includes a substrate; a middle layer, on the substrate; and a metal layer, on the middle layer; wherein the substrate is a flexible substrate, the middle layer includes a base and a patterned bulge on the base, the patterned bulge includes a plurality of strip-shaped bulges, the metal layer is on the patterned bulge, the carrier further includes a carbon nanotube composite structure between the metal layer and the patterned bulge.

Abstract: The disclosure relates to a carrier for use in single molecule detection. The carrier includes a flexible substrate and a metal layer on the flexible substrate. The flexible substrate includes a base and a bulge pattern located on a surface of the base. The bulge pattern includes a number of strip-shaped bulges intersecting with each other to form a net and define a number of recesses. The metal layer is located on the bulge pattern. The carrier for use in single molecule detection has a relative higher SERS and can enhance the Raman scattering.

Abstract: A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a gate on the substrate; a dielectric layer on the gate, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer formed by magnetron sputtering and in direct contact with the gate; a semiconductor layer on the dielectric layer, wherein the semiconductor layer includes nano-scaled semiconductor materials; and a source and a drain, wherein the source and the drain are on the dielectric layer, spaced apart from each other, and electrically connected to the semiconductor layer. The thin film transistor almost has no current hysteresis.

Abstract: The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer on the semiconductor layer, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the first sub-dielectric layer. The thin film transistor almost has no current hysteresis.

Abstract: A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.

Abstract: A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode is located on the surface of the insulating medium layer and includes a first metal layer and a second metal layer. The second electrode is located on the surface of the insulating medium layer and includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.

Abstract: The disclosure relates to a logic circuit. The logic circuit includes two ambipolar thin film transistors. Each of the two ambipolar thin film transistors includes a substrate; a semiconductor layer located on the substrate and including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are located on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer located on the substrate and covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The two ambipolar thin film transistors share the same substrate, the same gate, and the same drain.

Abstract: The disclosure relates to a method for detecting single molecules on an object. The method includes: providing a carrier; attaching the carrier on a surface of the object so that the surface of the object is indirect contact with the carrier; and detecting the single molecules on the object with a detector. The carrier includes a flexible substrate and a metal layer on the flexible substrate. The flexible substrate includes a base and a bulge pattern located on a surface of the base. The bulge pattern includes a number of strip-shaped bulges intersecting with each other to form a net and define a number of recesses. The metal layer is located on the bulge pattern. The carrier has a relative higher SERS and can enhance the Raman scattering.

Abstract: The disclosure relates to a logic circuit. The logic circuit includes a n-type thin film transistor and a p-type thin film transistor. Each thin film transistor includes a substrate; a semiconductor layer including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The n-type thin film transistor and the p-type thin film transistor share the same substrate and the same gate.

Abstract: A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode; the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.

Abstract: A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.

Abstract: A carrier for single molecule detection is related. The carrier includes a substrate; a middle layer, on the substrate; and a metal layer, on the middle layer; wherein the substrate is a flexible substrate, the middle layer includes a base and a patterned bulge on the base, the patterned bulge includes a plurality of strip-shaped bulges, the metal layer is on the patterned bulge.

Abstract: A molecular detection device is related. The device includes a carrier, a detector and a control computer. The carrier includes a substrate, a middle layer and a metal layer. The middle layer is sandwiched between the substrate and the middle layer. The detector is configured to detect molecules on a surface of the carrier. The control computer is connected to the detector and configured to analyze a detection result. The middle layer includes a base and a patterned bulge on the base, and the patterned bulge includes a plurality of strip-shaped bulges, the metal layer is on the patterned bulge.