Abstract: This method comprises: a first step for raising the temperature of an object on which a film is being formed to at least 200° C. and changing from a first state in which a film-forming material and a carrier gas are supplied to the object on which the film is being formed to deposit the film-forming material on the object on which the film is being formed to a second state in which the supply of the film-forming material is eliminated from the first state; and a second step for raising the temperature of the object on which the film is being formed to at least 200° C. and changing from a third state in which hydrogen gas and a carrier gas are supplied to the object on which the film is being formed to reduce the film-forming material to a fourth state in which the supply of the hydrogen gas is eliminated from the third state. The film-forming material is any one material selected from the group consisting of Al(CxH2x+1)3, Al(CxH2x+1)2H, and Al(CxH2x+1)2Cl.

Abstract: A wireless communication device includes a wireless communication unit and a processor. The wireless communication circuit performs a plurality of wireless communications by switching the wireless communications by performing time division multiplexing of channels used for the wireless communications. The processor causes the wireless communication circuit to perform a first wireless communication for wirelessly communicating via a relay device which is different from the wireless communication device and a second wireless communication for wirelessly communicating with a wireless terminal through a Peer to Peer system. The wireless communication circuit performs the time division multiplexing of a first channel and a second channel, the first channel corresponds to the first wireless communication, and the second channel corresponds to the second wireless communication.

Abstract: A wireless communication apparatus includes: a first wireless communication unit performing first wireless communication; a second wireless communication unit performing second wireless communication that consumes less power than the first wireless communication; and a control unit that switches between a first operation mode and a second operation mode consuming less power than the first operation mode. The control unit switches between the first operation mode and the second operation mode on a basis of a search result of searching for another apparatus performed in the second wireless communication.

Abstract: A wireless communication device includes a wireless communication unit that performs a plurality of wireless communications using different channels by switching the wireless communications by performing time division multiplexing, and a control unit that causes the wireless communication unit to perform a first wireless communication for wirelessly communicating via a relay device and a second wireless communication for wirelessly communicating with a wireless terminal through a Peer to Peer system. The control unit controls the wireless communication unit to use the same channel as a channel to be used in the first wireless communication and perform the second wireless communication.

Abstract: A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.

Abstract: A gate structure for effective work function adjustments of semiconductor devices that includes a gate dielectric on a channel region of a semiconductor device; a first metal nitride in direct contact with the gate dielectric; a conformal carbide of Aluminum material layer having an aluminum content greater than 30 atomic wt. %; and a second metal nitride layer in direct contact with the conformal aluminum (Al) and carbon (C) containing material layer. The conformal carbide of aluminum (Al) layer includes aluminum carbide, or Al4C3, yielding an aluminum (Al) content up to 57 atomic % (at. %) and work function setting from 3.9 eV to 5.0 eV at thicknesses below 25 ?. Such structures can present metal gate length scaling and resistance benefit below 25 nm compared to state of the art work function electrodes.

Abstract: An electronic apparatus includes a wireless communication unit which performs wireless communication, and a processing unit which controls the communication of the wireless communication unit. In a state in which the wireless communication unit performs wireless connections with a plurality of terminal apparatuses (existing connection terminals) and the wireless communication unit starts a wireless connection with a new connection terminal, which is different from the plurality of terminal apparatuses, the processing unit cuts the wireless connections with the plurality of terminal apparatuses, and establishes the wireless connections with the plurality of terminal apparatuses after waiting for establishment of the wireless connection with the new connection terminal.

Abstract: A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.

Abstract: A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.

Abstract: A wireless communication apparatus includes an indirect wireless communication unit that performs wireless communication that involves an access point; a direct wireless communication unit that performs direct wireless communication that does not involve the access point; and a control unit that controls a search for the access point that is performed sequentially on a plurality of channels, in which the control unit controls the number of channels that are used by the indirect wireless communication unit for the search for the access point, according to a communication state of the direct wireless communication.

Abstract: Provided is a semiconductor device including a Hall element, in which a depletion layer is prevented from spreading to a magnetism sensing portion more reliably, and thus variations in characteristic are reduced. The semiconductor device, including: a semiconductor substrate of a first conductivity type; and a Hall element formed on the semiconductor substrate, the Hall element having: a magnetism sensing portion of a second conductivity type formed on the semiconductor substrate so as to be separated from the semiconductor substrate; and a semiconductor layer of the second conductivity type formed so as to surround side surfaces and a bottom surface of the magnetism sensing portion on the semiconductor substrate and has a lower concentration than a concentration of the magnetism sensing portion and a uniform concentration distribution.

Abstract: After an alkaline secondary battery is determined to be in an over-discharge state, a battery pack is discharged while an electrolytic solution contained in the alkaline secondary battery in the over-discharge state is decomposed so that traveling using power of a motor is performed. The electrolytic solution remains in the alkaline secondary battery even when the alkaline secondary battery is in the over-discharge state. The alkaline secondary battery in the over-discharge state can be discharged and a vehicle can be allowed to travel by decomposing the electrolytic solution. In this manner, a traveling distance available during evacuation traveling of the vehicle can be increased.

Abstract: A wireless communication terminal includes an identification information obtainment unit that obtains identification information using, for example, a short-range wireless communication with the wireless communication device, a connection determination unit that, when the identification information in the network is wirelessly transmitted to an external access point connected in advance and a response for the transmission of the identification information in the network is received, determines whether or not a wireless communication device corresponding to the identification information in the network is on the network through the external access point based on the received response, a connection selection unit that selects whether to wirelessly connect to the wireless communication device without going through the external access point or wirelessly connect to the wireless communication device through the external access point, in accordance with the determined result, and a communication control unit that p

Abstract: A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.

Abstract: A technique relates to in-situ cleaning of a high-mobility substrate. Alternating pulses of a metal precursor and exposure to a plasma of a gas or gas mixture are applied. The gas or gas mixture contains both nitrogen and hydrogen (e.g., NH3). A passivation layer is formed on the high-mobility substrate by alternating pulses of the metal precursor and exposure to the plasma of a gas, or gas mixture, containing both nitrogen and hydrogen.

Abstract: A scaled dielectric stack interlayer, compatible with subsequent high temperature processing with good electrical transport & reliability properties is provided. A method for forming a conformal aSi:H passivation layer on a semiconductor device is described. A patterned semiconductor wafer is placed in in a process chamber with a first layer formed thereon and a second layer formed thereon, the first layer and the second layer being two different materials Next, a SixH(2x+2) based deposition up to a temperature of 400 degrees Celsius is used on the first layer and the second layer thereby forming a conformal aSi:H passivating layer is formed at a higher rate of deposition on the first layer selectively and a lower rate of deposit on the second layer.

Abstract: A wireless communication apparatus includes an indirect wireless communication unit that performs wireless communication that involves an access point; a direct wireless communication unit that performs direct wireless communication that does not involve the access point; a control unit that controls a search for the access point that is performed by the indirect wireless communication unit, in which the control unit controls a timing at which the indirect wireless communication unit searches for the access point, according to a communication state of the direct wireless communication.

Abstract: A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.

Abstract: A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.

Abstract: A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.