Abstract: A cable-direction-adaptive ROV winch applied to non-DP-equipped motherships, includes a non-DP-equipped mothership, an A-shaped support and a winch cable-drawing roller provided on the non-DP-equipped mothership, and an underwater vehicle. A pulley is rotatably connected to the A-shaped support, the underwater vehicle is connected to an umbilical cable, the umbilical cable passes around the pulley to be connected to the winch cable-drawing roller, and a locating unit for guiding the umbilical cable is provided on the non-DP-equipped mothership. The A-shaped support is provided with a rod. The pulley includes a sliding section and a rotating section, and the sliding section is annular and slides on the rod along a direction of the rod. The rod has a groove, and a bulge portion is formed on the sliding section. The rotating section is rotatably connected to an outer circle of the sliding section via a shaft bearing.

Abstract: The present disclosure discloses a ballistic transport semiconductor device based on nano array and a manufacturing method thereof. The ballistic transport semiconductor device based on nano array comprises a conducting substrate, more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and the height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier. The carrier is not influenced by various scattering mechanisms in a transporting procedure by virtue of the existence of ballistic transport characteristics, thereby obtaining a semiconductor device having advantages of lower on resistance, less working power consumption.

Abstract: A high-precision control system and method for shipborne cryogenic flash freezing of an aquatic product using liquid nitrogen is described. The system may include a main control system, a display unit, a liquid nitrogen supply system, a valve control unit, an acquisition unit, and a power unit. A flash freezing process is divided into four stages: a precooling stage, a flash freezing stage, a deep freezing stage, and a thermal insulation stage. Different cooling rates and flash freezing times are used for different stages, where a cooling rate is used in the flash freezing stage is the highest, a cooling rate used in the deep freezing stage is next, a cooling rate used in the precooling stage is the lowest, and an ambient temperature in a device is kept stable in the thermal insulation stage.

Abstract: A computer-assisted method to provide timely multi-channel notification of treatments to healthcare providers and patients, the method including receiving de-identified longitudinal medical records, treatment prescription records of healthcare providers, and notification data. Relationships between the healthcare providers, the anonymized patients, and the notifications are identified using the de-identified longitudinal medical records, the treatment prescription records of the healthcare providers, and the notification data. An impact of notifications being received by both the healthcare provider for the anonymized patient and the anonymized patient on whether the anonymized patient received the treatment is determined.

Abstract: Provided are a gas phase oxidation/decomposition and absorption integrated device and application thereof in a gas-liquid system. The device comprises a housing (100), a motor (102), and a boost regulator (103); the housing (100) is internally provided with a rotating chamber (120) and a discharge chamber (122); the rotating chamber (120) comprises a rotating shaft (119), a turntable (124), a liquid distributor (123), packing layers (110), a guiding round table (111), a liquid inlet (108), a liquid outlet (112), and a first gas outlet (109); the discharge chamber (122) is located under the rotating chamber (120) and comprises a discharge chamber housing (121) and a plasma generator.

Abstract: A computer-assisted method to timely provide notifications of treatments, the method including receiving de-identified longitudinal medical records, receiving notification data, identifying anonymized patients that received the treatment, identifying notifications for the treatment that were received by the recipients, determining, for each of the identified notifications, whether the recipient is an anonymized patient identified as having received the treatment, determining, for each of the identified notifications for the treatment determined to be received by a recipient that is an anonymized patient identified as having received the treatment, a time relationship between the time when the treatment was received by the anonymized patient and the time that the notification was received by the recipient that is the anonymized patient, and determining, for each of the anonymized patients that received the treatment, associations between one or more time relationships for notifications received by the anonymiz

Abstract: The present disclosure discloses a ballistic transport semiconductor device based on nano array and a manufacturing method thereof. The ballistic transport semiconductor device based on nano array comprises a conducting substrate, more than one semiconductor nano bump portion is arranged on a first surface of the conducting substrate, a top end of the semiconductor nano bump portion is electrically connected with a first electrode, a second surface of the conducting substrate is electrically connected with a second electrode, the second surface and the first surface are arranged back to back, and the height of the semiconductor nano bump portion is less than or equal to a mean free path of a carrier. The carrier is not influenced by various scattering mechanisms in a transporting procedure by virtue of the existence of ballistic transport characteristics, thereby obtaining a semiconductor device having advantages of lower on resistance, less working power consumption.

Abstract: The disclosure relates to a process for manufacturing three-layer warp-woven fabric with a perspective effect and fabric woven by the same. A dual-needle-bed warp loom is used to weave the fabric; a front needle bed is programmed to weave transparent filaments. Distinguished from the prior art, in the disclosure, the transparent filaments are woven at the front needle bed, so that the fabric at the front needle bed becomes transparent, and the jacquard guide bar generates the weft insertion stitch at the front needle bed and the loop stitch at the rear needle bed, so that the front and rear needle beds of the jacquard guide bar weave different stitches to finally obtain three-layer warp-woven fabric with a perspective effect (the color and shape of the middle or bottom layer are visible), achieving an irregular concave-convex effect in different areas with color visible.

Abstract: A computer-assisted method to timely provide notifications of treatments, the method including receiving de-identified longitudinal medical records, each de-identified longitudinal medical record representing a record of a different anonymized patient and encoding information identifying a treatment received by the anonymized patient and receiving notification data including notification records, each notification record encoding information identifying a channel through which the notification was provided. The method includes determining a first channel impact model representing an impact of a notification provided through a first channel on a treatment being received, a second channel impact model representing an impact of a notification provided through a second channel on a treatment being received, and determining a multi-channel impact model representing an impact of notifications being provided through both the first channel and the second channel on a treatment being received.

Abstract: Provided are a gas phase oxidation/decomposition and absorption integrated device and application thereof in a gas-liquid system. The device comprises a housing (100), a motor (102), and a boost regulator (103); the housing (100) is internally provided with a rotating chamber (120) and a discharge chamber (122); the rotating chamber (120) comprises a rotating shaft (119), a turntable (124), a liquid distributor (123), packing layers (110), a guiding round table (111), a liquid inlet (108), a liquid outlet (112), and a first gas outlet (109); the discharge chamber (122) is located under the rotating chamber (120) and comprises a discharge chamber housing (121) and a plasma generator.

Abstract: A combined cam shaft assembling method comprises the following steps: A, grinding the outer diameter of a steel pipe (2) to specified precision, and machining an inner hole of a cam sheet (1) and a signal disc to specified precision; B, pre-installing the cam sheet (1) and the signal disc onto the steel pipe (2) according to a specified sequence, distance and angle; C, utilizing a tension part (3) to penetrate through the steel pipe (2), ensuring the steel pipe (2) to be expanded, so as to fix the cam sheet (1) and the signal disc onto the steel pipe (2) and reach a specified torque. The method is carried out through a combined cam shaft assembling device. By adopting the tension part (3) to expand the steel pipe (2), the steel pipe (2) and the cam sheet (1) can be rapidly combined, the cam sheet (1) and the signal disc can be clamped onto the steel pipe (2) in a more reliable manner, and the strength of the entire cam shaft is relatively high.

Abstract: A combined cam shaft assembling method comprises the following steps: A, grinding the outer diameter of a steel pipe (2) to specified precision, and machining an inner hole of a cam sheet (1) and a signal disc to specified precision; B, pre-installing the cam sheet (1) and the signal disc onto the steel pipe (2) according to a specified sequence, distance and angle; C, utilizing a tension part (3) to penetrate through the steel pipe (2), ensuring the steel pipe (2) to be expanded, so as to fix the cam sheet (1) and the signal disc onto the steel pipe (2) and reach a specified torque. The method is carried out through a combined cam shaft assembling device. By adopting the tension part (3) to expand the steel pipe (2), the steel pipe (2) and the cam sheet (1) can be rapidly combined, the cam sheet (1) and the signal disc can be clamped onto the steel pipe (2) in a more reliable manner, and the strength of the entire cam shaft is relatively high.

Abstract: A dispersion of (meth)acrylate copolymer containing a hydroxyalkyl (meth)acrylate comonomer unit, which is obtained from polymerization of monomers comprising or consisting of, based on the total monomer weight, (a) from 25 to 45% by weight of at least one monovinyl aromatic monomer and/or methyl methacrylate; (b) from 50 to 70% by weight of at least one C4-8 alkyl (meth)acrylate; (c) from 2 to 7% by weight of at least one hydroxyalkyl (meth)acrylate; (d) from 0 to 1% by weight of at least one ?,?-monoethylenically unsaturated C3-6 monocarboxylic or dicarboxylic acid; and (e) from 0 to 0.65% by weight of (meth)acrylamide, N-hydroxyalkyl (meth)acrylamide, 2-acrylamido-2-methylpropane sulfonic acid or a combination thereof. A powder of (meth)acrylate copolymer containing a hydroxyalkyl (meth)acrylate comonomer unit obtained by drying the dispersion. A flexible cementitious waterproofing material including the dispersion or the powder.

Abstract: The present invention discloses a wafer-level semiconductor device and a manufacturing method thereof. The wafer-level semiconductor device comprises a wafer-level substrate; a plurality of serial groups formed on a surface of the substrate and are disposed in parallel, each serial group comprising a plurality of parallel groups disposed in series, each parallel groups comprising a plurality of unit cells disposed in parallel, wherein each unit cell is an independent functional unit which is formed by processing a semiconductor layer directly grown on a surface of the substrate; and a lead, which is at least electrically connected between two selected parallel groups in each serial group to make ON-voltages of all the serial groups substantially consistent. The device of the present invention, with a simple structure, a simple and convenient manufacturing process, and a high efficiency to produce qualified products, can be put into large-scale production and application.

Abstract: The present invention discloses a wafer-level semiconductor device and a manufacturing method thereof. The wafer-level semiconductor device comprises a wafer-level substrate; a plurality of serial groups formed on a surface of the substrate and are disposed in parallel, each serial group comprising a plurality of parallel groups disposed in series, each parallel groups comprising a plurality of unit cells disposed in parallel, wherein each unit cell is an independent functional unit which is formed by processing a semiconductor layer directly grown on a surface of the substrate; and a lead, which is at least electrically connected between two selected parallel groups in each serial group to make ON-voltages of all the serial groups substantially consistent. The device of the present invention, with a simple structure, a simple and convenient manufacturing process, and a high efficiency to produce qualified products, can be put into large-scale production and application.

Abstract: The present invention provides a terahertz source chip, a source device, a source assembly and manufacturing methods thereof. The source chip comprises: a two-dimensional electron gas mesa; an electrode formed on the two-dimensional electron gas mesa for exciting a plasma wave; a terahertz resonant cavity formed below the two-dimensional electron gas mesa, the terahertz resonant cavity having a total reflector on a bottom surface thereof; and a grating formed on the two-dimensional electron gas mesa for coupling a plasma wave pattern with a cavity mode of the terahertz resonant cavity to generate terahertz radiation. In the present invention, a plasmon polariton is formed by strongly coupling the cavity mode of the terahertz resonant cavity with the plasma wave mode in the two-dimensional electron gas below the grating, and the terahertz wave emission is realized by electrical excitation of the plasmon polariton.

Abstract: A method for detecting a time synchronization ability of the real-time measuring device based on a time variable is provided. On a premise that the real-time measuring device correctly receives time service signals, the method aims at detecting time synchronization signal application ability of the real-time measuring device, and involves a purely resistive loop comprising a value transferring device and a time controllable switch. The method, via a time synchronization performance thereof, relatively completely reflects the time synchronization signal application ability of the device within a value transfer requirement. The method is a development upon power station time synchronization time service signals and transmission accuracy detection and an improvement of power station time synchronization detection procedures. The method facilitates improving real-time analysis and monitoring abilities of a power station and a power grid to a primary device and a primary system.

Abstract: A group III nitride high electron mobility transistor (HEMT) device comprises a source electrode (112), a drain electrode (111), a main gate (116), a top gate (118), an insulating dielectric layer (117) and a heterostructure, wherein the source electrode (112) and the drain electrode (111) are electrically connected via two-dimensional electron gas (2DEG) formed in the heterostructure; the heterostructure comprises a first semiconductor (113) and a second semiconductor (114); the first semiconductor (113) is disposed between the source electrode (112) and drain electrode (111); the second semiconductor (114) is formed on the surface of the first semiconductor (113) and is provided with a band gap wider than the first semiconductor (113); the main gate (116) is disposed at the side of the surface of the second semiconductor (114) adjacent to the source electrode (112), and is in Schottky contact with the second semiconductor (114); the dielectric layer (117) is disposed on the surfaces of the second semiconduc

Abstract: The disclosure generally describes computer-implemented methods, software, and systems for identifying the role of Integrated Delivery Networks (IDNs) in determining prescriber behavior, using an analytical and reporting infrastructure. The disclosure also describes determining a model role for the prescribing behavior of the prescribers affiliated with an IDN to establish a performance level of a drug.