Patents by Inventor Yong Cai
Yong Cai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150058028Abstract: The disclosure generally describes computer-implemented methods, software, and systems for identifying the role of Integrated Delivery Networks (IDNs) in determining prescriber behavior, using an analytical and reporting infrastructure. The disclosure also describes determining a model role for the prescribing behavior of the prescribers affiliated with an IDN to establish a performance level of a drug.Type: ApplicationFiled: August 23, 2013Publication date: February 26, 2015Applicant: IMS HEALTH INCORPORATEDInventors: Lingyun Su, Yong Cai, Yuan Ren, Jeff Tomlinson, Daniel Barton, Angeliki Cooney
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Publication number: 20140319584Abstract: A group III nitride high electron mobility transistor (HEMT) device comprises a source electrode (112), a drain electrode (111), a main gate (116), a top gate (118), an insulating dielectric layer (117) and a heterostructure, wherein the source electrode (112) and the drain electrode (111) are electrically connected via two-dimensional electron gas (2DEG) formed in the heterostructure; the heterostructure comprises a first semiconductor (113) and a second semiconductor (114); the first semiconductor (113) is disposed between the source electrode (112) and drain electrode (111); the second semiconductor (114) is formed on the surface of the first semiconductor (113) and is provided with a band gap wider than the first semiconductor (113); the main gate (116) is disposed at the side of the surface of the second semiconductor (114) adjacent to the source electrode (112), and is in Schottky contact with the second semiconductor (114); the dielectric layer (117) is disposed on the surfaces of the second semiconducType: ApplicationFiled: November 16, 2012Publication date: October 30, 2014Inventors: Yong Cai, Guohao Yu, Zhihua Dong, Baoshun Zhang
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Publication number: 20140240145Abstract: A method for detecting a time synchronization ability of the real-time measuring device based on a time variable is provided. On a premise that the real-time measuring device correctly receives time service signals, the method aims at detecting time synchronization signal application ability of the real-time measuring device, and involves a purely resistive loop comprising a value transferring device and a time controllable switch. The method, via a time synchronization performance thereof, relatively completely reflects the time synchronization signal application ability of the device within a value transfer requirement. The method is a development upon power station time synchronization time service signals and transmission accuracy detection and an improvement of power station time synchronization detection procedures. The method facilitates improving real-time analysis and monitoring abilities of a power station and a power grid to a primary device and a primary system.Type: ApplicationFiled: November 23, 2012Publication date: August 28, 2014Applicants: STATE GRID HUBEI ELECTRIC POWER RESEARCH INSTITUTE, STATE GRID CORPORATION OF CHINAInventors: Hong Chen, Yongjun Xia, Yuehai Yu, Gang Hu, Yong Cai, Jin Wang, Qian Tao
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Patent number: 8415186Abstract: The present invention provides a method of super flat chemical mechanical polishing (SF-CMP) technology, which is a method characterized in replacing laser lift-off in a semiconductor fabricating process. SF-CMP has a main step of planting a plurality of polishing stop points before polishing the surface, which is characterized by hardness of the polishing stop points material being larger than hardness of the surface material. Therefore, the present method can achieve super flat polishing surface without removing polishing stop points.Type: GrantFiled: August 10, 2007Date of Patent: April 9, 2013Assignee: Hong Kong Applied Science and Technology Research Institute Co. Ltd.Inventors: Yong Cai, Hung-Shen Chu
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Patent number: 8187900Abstract: The present invention provides a method of fabricating vertical LED structures in which the substrate used for epitaxial layer growth is removed through polishing. The polishing technique used in an exemplary embodiment is chemical mechanical polishing using polish stops to provide a sufficiently level plane. Polish stops are provided in the multilayer structure before polishing the surface, the hardness of the polish stop material being greater than the hardness of the material that needs to be removed. Consequently, vertical LEDs can be produced at a lower cost and higher yield compared to either laser lift-off or conventional polishing. Exemplary vertical LEDs are GaN LEDs. The polish stops may be removed by saw dicing, laser dicing or plasma etching.Type: GrantFiled: October 26, 2010Date of Patent: May 29, 2012Assignee: Hong Kong Applied Science and Technology Research Institute Company LimitedInventors: Li Min Lin, Ka Wah Chan, Sheng Mei Zheng, Yong Cai
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Patent number: 7985971Abstract: A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.Type: GrantFiled: March 31, 2009Date of Patent: July 26, 2011Assignee: Hong Kong Applied Science and Technology Research Institute Co. Ltd.Inventors: Yong Cai, Hung Shen Chu, Shengmei Zheng, Ka Wah Chan
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Patent number: 7972915Abstract: A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.Type: GrantFiled: November 29, 2006Date of Patent: July 5, 2011Assignee: The Hong Kong University of Science and TechnologyInventors: Jing Chen, Yong Cai, Kei May Lau
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Patent number: 7932539Abstract: A method of fabricating AlGaN/GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN/GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN/GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing of the sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).Type: GrantFiled: November 29, 2006Date of Patent: April 26, 2011Assignee: The Hong Kong University of Science and TechnologyInventors: Jing Chen, Yong Cai, Kei May Lau
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Publication number: 20110037051Abstract: The present invention provides a method of fabricating vertical LED structures in which the substrate used for epitaxial layer growth is removed through polishing. The polishing technique used in an exemplary embodiment is chemical mechanical polishing using polish stops to provide a sufficiently level plane. Polish stops are provided in the multilayer structure before polishing the surface, the hardness of the polish stop material being greater than the hardness of the material that needs to be removed. Consequently, vertical LEDs can be produced at a lower cost and higher yield compared to either laser lift-off or conventional polishing. Exemplary vertical LEDs are GaN LEDs. The polish stops may be removed by saw dicing, laser dicing or plasma etching.Type: ApplicationFiled: October 26, 2010Publication date: February 17, 2011Applicant: Hong Kong Applied Science and Technology Research Institute Company LimitedInventors: Li Min Lin, Ka Wah Chan, Sheng Mei Zheng, Yong Cai
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Patent number: 7846753Abstract: A vertical gallium-nitrate-based LED and method of making a vertical gallium-nitrate-based LED using a stop layer is provided. Embodiments of the present invention use mechanical thinning and a plurality of superhard stop points to remove epitaxial layers with a high level of certainty. According one embodiment, the method of making a vertical LED includes forming a plurality of layers on a sapphire substrate, forming a plurality of stop points in the plurality of layers, removing the sapphire substrate and part of a u-GaN layer using mechanical thinning, wherein the mechanical thinning stops at an end of the plurality of stop points, selectively etching the u-GaN layer and exposing at least a part of the highly doped stop layer, and forming an n-electrode on the highly doped stop layer.Type: GrantFiled: March 28, 2008Date of Patent: December 7, 2010Assignee: Hong Kong Applied Science and Technology Research InstituteInventors: Hung Shen Chu, Yong Cai
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Patent number: 7653712Abstract: An agent of a storage area network generates a first checksum value for a first set of zone configuration data used to at least initially configure the storage area network. At a later time, after a potential change to the first zone configuration data of the storage area network, the agent generates a checksum value based on current zone configuration data presently used to configure the zone in the storage area network. The agent then compares the first checksum value and the second checksum value to identify whether there has been a change to the first zone configuration data. That is, if the first checksum value does not equal the second checksum value, the agent flags that there has been a change to zone configuration data of the storage area network. Users can control behavior of zoning importation and activation depending on whether current zone configuration data has been changed.Type: GrantFiled: March 30, 2005Date of Patent: January 26, 2010Assignee: EMC CorporationInventors: Alexander Dubrovsky, Xiaojun Wu, Yifeng Chen, Yong Cai, James E. Lavallee
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Publication number: 20090218590Abstract: A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.Type: ApplicationFiled: March 31, 2009Publication date: September 3, 2009Applicant: Hong Kong Applied Science and Technology Research InstituteInventors: Yong Cai, HungShen Chu, Shengmei Zheng, Ka Wah Chan
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Publication number: 20090039383Abstract: A vertical gallium-nitrate-based LED and method of making a vertical gallium-nitrate-based LED using a stop layer is provided. Embodiments of the present invention use mechanical thinning and a plurality of superhard stop points to remove epitaxial layers with a high level of certainty. According one embodiment, the method of making a vertical LED includes forming a plurality of layers on a sapphire substrate, forming a plurality of stop points in the plurality of layers, removing the sapphire substrate and part of a u-GaN layer using mechanical thinning, wherein the mechanical thinning stops at an end of the plurality of stop points, selectively etching the u-GaN layer and exposing at least a part of the highly doped stop layer, and forming an n-electrode on the highly doped stop layer.Type: ApplicationFiled: March 28, 2008Publication date: February 12, 2009Applicant: Hong Kong Applied Science Technology Research InstituteInventors: Hung Shen Chu, Yong Cai
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Publication number: 20080199653Abstract: The present invention relates to a method of forming a two-dimensional pattern, which includes: dispersing a plurality of spheres on a substrate; using the spheres to form a mask on the substrate; etching the substrate; and removing the mask from the substrate. In addition, the present invention further relates to a method of processing a surface of a substrate, which includes: dispersing a plurality of spheres on the surface of the substrate; depositing a substance among the spheres; and removing the spheres to leave the deposited substance on the surface of the substrate. The method of the present invention achieves a quicker and simpler process with a lower cost. In addition, a light emitting device manufactured through the method of the present invention has preferred light extraction efficiency and a variable radiation field pattern.Type: ApplicationFiled: August 28, 2007Publication date: August 21, 2008Applicant: Hong Kong Applied Science and Technology Research Institute Co. Ltd.Inventors: Hao-Chung Kuo, Shi Wun Tong, Hung-Shen Chu, Yong Cai
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Publication number: 20080197367Abstract: The present invention provides a method of super flat chemical mechanical polishing (SF-CMP) technology, which is a method characterized in replacing laser lift-off in a semiconductor fabricating process. SF-CMP has a main step of planting a plurality of polishing stop points before polishing the surface, which is characterized by hardness of the polishing stop points material being larger than hardness of the surface material. Therefore, the present method can achieve super flat polishing surface without removing polishing stop points.Type: ApplicationFiled: August 10, 2007Publication date: August 21, 2008Applicant: Hong Kong Applied Science and Technology Research Institute Co. Ltd.Inventors: Yong Cai, Hung-Shen Chu
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Publication number: 20080101062Abstract: A light source for a lighting device has a reflector for receiving one or more light emitting diode devices. The reflector has reflective sides and a light exit. There is a side emitting LED device located in the reflector such that its primary light emitting direction towards the reflective sides such that light emitted from the LED device are reflected towards the light exit.Type: ApplicationFiled: July 24, 2007Publication date: May 1, 2008Inventors: Jian Feng, Shengmei Zheng, Yong Cai, Hung-Shen Chu
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Publication number: 20070278518Abstract: A method of fabricating AlGaN/GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN/GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN/GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing of the sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).Type: ApplicationFiled: November 29, 2006Publication date: December 6, 2007Applicant: The Hong Kong University of Science and TechnologyInventors: Jing Chen, Yong Cai, Kei Lau
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Publication number: 20070228416Abstract: A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.Type: ApplicationFiled: November 29, 2006Publication date: October 4, 2007Applicant: The Hong Kong University of Science and TechnologyInventors: Jing Chen, Yong Cai, Kei Lau
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Patent number: 7119331Abstract: A nanoparticle ion detector includes an ion trap that receives charged particles ejected from a mass selection device. A laser beam illuminates the particles to induce fluorescence, which is detected by the photon detector. Particles are periodically dumped from the ion trap. A mass spectrum of the charged particles can be obtained by comparing signals from the photon detector with the particle ejection characteristics of the mass selection device.Type: GrantFiled: December 1, 2003Date of Patent: October 10, 2006Assignee: Academia SinicaInventors: Huan-Cheng Chang, Wen-Ping Peng, Yong Cai
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Publication number: 20060019682Abstract: The present invention is to provide an apparatus for improving communication quality of PHS handset and method thereof, which enables any two PHS handsets to be extensions and communicate directly by utilizing a fixed private telephone or a fixed public telephone having a wireless communication exchange module as a main telephone, so that the PHS handsets are able to not only communicate directly therebetween but also make or receive a call through the connections among the fixed telephones and operate normally in an environment without having the external cell stations.Type: ApplicationFiled: July 20, 2004Publication date: January 26, 2006Applicant: Inventec Appliances CorporationInventors: Cheng-Shing Lai, Cui Qi, Yong-Cai Bian