Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.

Abstract: The present disclosure provides an interconnect formed on a substrate and methods for forming the interconnect on the substrate. In one embodiment, the method for forming an interconnect on a substrate includes depositing a barrier layer on the substrate, depositing a transition layer on the barrier layer, and depositing an etch-stop layer on the transition layer, wherein the transition layer shares a common element with the barrier layer, and wherein the transition layer shares a common element with the etch-stop layer.

Abstract: The present invention provides a data processing method, including: acquiring historical data, where the historical data belongs to a first level and a second level, and data corresponding to the first level comprises data corresponding to the second level; generating, from the historical data, a first-granularity data set according to a first granularity, and generating, from the historical data, a second-granularity data set according to a second granularity, where the first granularity and the second granularity respectively correspond to the first level and the second level; performing modeling for a second-granularity forecasting model according to the first-granularity data set and the second-granularity data set; and performing forecasting by using the second-granularity forecasting model to obtain second-granularity forecast data. The present invention enables obtained forecast data of different granularities to be consistent.

Abstract: An insulating mother board, an insulating harness mother board assembly and a battery module including the insulating mother board are provided. The insulating mother board includes a first end insulating board, a middle insulating board and a second end insulating board moveably connected in sequence. According to the insulating mother board, an arbitrary number of middle insulating boards can be arranged by arranging the first end insulating board and the second end insulating board on two ends of the insulating mother board respectively. There may be an arbitrary number of connection holes on the first end insulating board, the middle insulating board and the second end insulating board, each connection hole corresponds to one single battery. In this way, an assembly of different numbers of single batteries can be achieved.

Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

Abstract: The present invention discloses a polymer containing 1,2,5-benzoselenadiazole-N—R1-5,6-dicarboxylic acid imide, and a preparation method and use thereof. The conjugated polymer prepared by the present invention has fluorescence, and a relatively wide absorption of sunlight, and thus it can be used for manufacture of an active layer for a polymer light-emitting diode device, a polymer field-effect transistor and a polymer solar cell.

Abstract: The automated social networking graph mining and visualization technique described herein mines social connections and allows creation of a social networking graph from general (not necessarily social-application specific) Web pages. The technique uses the distances between a person's/entity's name and related people's/entities names on one or more Web pages to determine connections between people/entities and the strengths of the connections. In one embodiment, the technique lays out these connections, and then clusters them, in a 2-D layout of a social networking graph that represents the Web connection strengths among the related people's or entities' names, by using a force-directed model.

Abstract: The present invention discloses a polymer containing 1,2,5-benzoselenadiazole-N—R1-5,6-dicarboxylic acid imide, and a preparation method and use thereof. The conjugated polymer prepared by the present invention has fluorescence, and a relatively wide absorption of sunlight, and thus it can be used for manufacture of an active layer for a polymer light-emitting diode device, a polymer field-effect transistor and a polymer solar cell.

Abstract: A multifunctional continuous phase transition extraction apparatus comprises an extraction system, a desorption system and a solvent recovery system. The extraction system comprises a first heat exchanger and an extraction tank. The desorption system comprises a second heat exchanger, a first desorption tank, a second desorption tank, a first purification column and a second purification column. The solvent recovery system comprises a first condenser, a second condenser, a first solvent tank and a second solvent tank. Two extraction loops can be formed in the present invention. During the overall extraction process, the phase transition process of the extracting agent is real-time and continuous. The extracting agent goes through continuous phase-transitions and is cyclically re-used. The overall process is operated in an airtight and low-pressure condition, and is multifunctional, safe, reliable, and suitable for the extraction for most natural products.

Abstract: An interconnect structure for use in semiconductor devices and a method for fabricating the same is described. The method includes positioning a substrate in a vacuum processing chamber, wherein the substrate comprises a copper layer having an exposed surface and a low-k dielectric layer having an exposed surface, forming a metal layer over the exposed surface of the copper layer, wherein the exposed surface of the low-k dielectric layer is free from the metal layer, and forming a metal-based dielectric layer over the metal layer and over at least part of the exposed low-k dielectric surface, wherein the metal-based dielectric layer comprises an aluminum compound.

Abstract: The automated social networking graph mining and visualization technique described herein mines social connections and allows creation of a social networking graph from general (not necessarily social-application specific) Web pages. The technique uses the distances between a person's/entity's name and related people's/entities names on one or more Web pages to determine connections between people/entities and the strengths of the connections. In one embodiment, the technique lays out these connections, and then clusters them, in a 2-D layout of a social networking graph that represents the Web connection strengths among the related people's or entities' names, by using a force-directed model.

Abstract: Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.

Abstract: Interconnect structures and methods of formation of such interconnect structures are provided herein. In some embodiments, a method of forming an interconnect includes: depositing a silicon-aluminum oxynitride (SiAlON) layer atop a first layer of a substrate, wherein the first layer comprises a first feature filled with a first conductive material; depositing a dielectric layer over the silicon-aluminum oxynitride (SiAlON) layer; and forming a second feature in the dielectric layer and the silicon-aluminum oxynitride (SiAlON) layer to expose the first conductive material.

Abstract: In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.

Abstract: Processing methods comprising depositing an initial hardmask film on a substrate by physical vapor deposition and exposing the initial hardmask film to a treatment plasma comprising a silane compound to form the hardmask.

Abstract: A crystal lens includes a liquid crystal layer, a pair of alignment layers, a first electrode set, and a second electrode set. The alignment layers are positioned on different sides of the liquid crystal layer. The first and second electrode sets are positioned on different alignment layers. The first electrode set includes a first transparent insulating layer and a first electrode layer. The first electrode set attaches to one of the alignment layers. The second electrode set includes a second transparent insulating layer, a second electrode layer, and a dielectric film. The second electrode layer includes a hole-patterned electrode. The dielectric film attaches to the first transparent insulating layer. The hole-patterned electrode exposes the dielectric film. In addition, an external power supply provides a driving voltage to the hole-patterned electrode and the first electrode layer, so that the liquid crystal molecules inside the liquid crystal layer drive rotation.

Abstract: The present invention belongs to the technical field of optoelectronic devices, and discloses an electron transport layer material and its application. This material has the following structure: wherein n is a natural number of 1 to 10000, B is a strongly polar group, A1 and A2 are the same or different aromatic ring derivatives or conjugated units containing carbon-carbon double bonds and carbon-nitrogen bonds, M is a connection unit between A2 and B and is an alkyl group containing 1 to 20 carbon atoms, or is an alkyl group in which one or more carbon atoms are replaced by one or more functional groups selected from oxygen atoms, alkenyl groups, alkynyl groups, aryl groups or ester groups, and the hydrogen atom is replaced by a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the above-mentioned functional groups.

Abstract: Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula ROxNy, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R?OxNy, wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R? are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.

Abstract: Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a process kit shield includes: a body having a surface facing a processing volume of a physical vapor deposition (PVD) process chamber, wherein the body is composed of aluminum oxide (Al2O3), and a silicon nitride layer on the surface of the body.