Abstract: A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.

Abstract: A semiconductor device including an active pattern extending in a first direction; a channel pattern on the active pattern and including vertically stacked semiconductor patterns; a source/drain pattern in a recess in the active pattern; a gate electrode on the active pattern and extending in a second direction crossing the first direction, the gate electrode surrounding a top surface, at least one side surface, and a bottom surface of each of the semiconductor patterns; and a gate spacer covering a side surface of the gate electrode and having an opening to the semiconductor patterns, wherein the source/drain pattern includes a buffer layer covering inner sides of the recess, the buffer layer includes an outer side surface and an inner side surface, which are opposite to each other, and each of the outer and inner side surfaces is a curved surface that is convexly curved toward a closest gate electrode.

Abstract: A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

Abstract: A self-gettering differential pump for a molecular beam epitaxy system has a collimator with a length greater than its diameter mounted in front of a source in extended port geometry, wherein the reactant delivered by the source also serves as a gettering agent.

Abstract: This invention relates to a method of producing aromatic hydrocarbons and olefin from hydrocarbonaceous oils including large amounts of polycyclic aromatic compounds having two or more rings via partial hydrogenation in the presence of a hydrogenation catalyst and catalytic cracking in the presence of a catalytic cracking catalyst.

Abstract: This invention relates to a hydrocracking catalyst for preparing valuable light aromatic hydrocarbons from polycyclic aromatic hydrocarbons derived from oil, which includes (i) beta-zeolite, (ii) pseudo-boehmite, and (iii) one or more metals selected from among metals of Groups VIII and VIB, and which further includes a cocatalyst component, thereby producing a maximum amount of BTX (Benzene, Toluene, Xylene) from LCO (Light Cycle Oil).

Abstract: Disclosed is a method of recovering 1,3-butadiene from a C4 stream containing butane, isobutane, 2-butene, 1-butene, isobutene, butadiene and acetylene. The process of recovering highly pure 1,3-butadiene includes acetylene conversion for selectively converting acetylene through liquid-phase hydrogenation, so that the acetylene content is decreased to 70 wt ppm or less, and 1,3-butadiene extraction using an extractive distillation column, a pre-separator, a solvent stripping column, a solvent recovery column, and a purification column. Through the acetylene conversion, the concentration of vinylacetylene is decreased to 70 wt ppm or less, after which 1,3-butadiene is recovered using only one extractive distillation column, thereby considerably decreasing the degree of utility and the loss of streams in the course of extraction. The number of units necessary for the process is decreased, thus remarkably reducing the time during which impurities can accumulate in a processing unit.

Abstract: Disclosed are a molecular sieve catalyst and a preparation method thereof to produce light olefins from cracking naphtha catalytically in severe environments of high temperature and high moisture. In detail, the catalyst is prepared by spray-drying and calcining the mixed slurry, in which 0.01˜5.0 wt % of MnO2 and 1˜15 wt % of P2O5 are simultaneously imbedded in catalyst which consists of zeolite, clay and inorganic complex. According to the present invention, the method that manganese and phosphate are imbedded simultaneously in zeolite and inorganic complex is used to increases thermal-stability of obtained spherical catalyst, and increase olefin yield of cracking hydrocarbon such as naphtha by protecting acid-site of zeolite. To synthesize the required catalyst, the important procedures are mixing ratio and mixing sequence of Mn, P, zeolite, and inorganic complex.

Abstract: The present invention relates to a method for manufacturing aromatic products (benzene/toluene/xylene) and olefinic products from an aromatic-compound-containing oil fraction, whereby it is possible to substitute naphtha as a feedstock for aromatic production and so make stable supply and demand, and it is possible to substantially increase the yield of high-added-value olefinic and high-added-value aromatic components, by providing a method for manufacturing olefinic and aromatic products from light cycle oil comprising a hydrogen-processing reaction step, a catalytic cracking step, an separation step and a transalkylation step, and optionally also comprising a recirculation step.

Abstract: This invention relates to a method of producing aromatics and olefins from oils derived from coal or wood, including partially saturating and cracking the oils derived from coal or wood in a hydrogenation and reaction area, separating them depending on the number of carbons, recirculating heavy oils having 11 or more carbons to the hydrogenation and reaction area, feeding oils suitable for producing BTX to an aromatic separation process and a transalkylation process to recover aromatics, and feeding hydrocarbonaceous components having 5 or less carbons to a light separation process, thus obtaining olefins.

Abstract: This invention relates to a method of producing aromatics and light paraffins from hydrocarbonaceous oils derived from oil, coal or wood, including partially saturating and hydrocracking the oils derived from oil in a hydrogenation and reaction area, separating them depending on the number of carbons, recirculating heavy oils having 11 or more carbons to the hydrogenation and reaction area, feeding oils suitable for producing BTX to an aromatic separation process and a transalkylation process to recover aromatics, and feeding hydrocarbonaceous components having 5 or fewer carbons to a light separation process, thus obtaining light paraffins.

Abstract: This invention relates to a petroleum refining method for producing high value-added clean petroleum products and aromatics (Benzene/Toluene/Xylene) together, by which low pollution petroleum products including liquefied petroleum gas or low-sulfur gas oil and aromatics can be efficiently produced together from a fluid catalytic cracked oil fraction.

Abstract: This invention relates to a method of producing aromatic hydrocarbons and olefin from hydrocarbonaceous oils including large amounts of polycyclic aromatic compounds having two or more rings via partial hydrogenation in the presence of a hydrogenation catalyst and catalytic cracking in the presence of a catalytic cracking catalyst.

Abstract: Disclosed are a molecular sieve catalyst and a preparation method thereof to produce light olefins from cracking naphtha catalytically in severe environments of high temperature and high moisture. In detail, the catalyst is prepared by spray-drying and calcining the mixed slurry, in which 0.01˜5.0 wt % of MnO2 and 1˜15 wt % of P2O5 are simultaneously imbedded in catalyst which consists of zeolite, clay and inorganic complex. According to the present invention, the method that manganese and phosphate are imbedded simultaneously in zeolite and inorganic complex is used to increases thermal-stability of obtained spherical catalyst, and increase olefin yield of cracking hydrocarbon such as naphtha by protecting acid-site of zeolite. To synthesize the required catalyst, the important procedures are mixing ratio and mixing sequence of Mn, P, zeolite, and inorganic complex.

Abstract: This invention relates to a method of producing an aromatic hydrocarbon compound from byproducts of aromatic carboxylic acid and/or aromatic carboxylic acid alkylester preparation processes using hydroprocessing under conditions of high temperature and high hydrogen pressure in the presence of a catalyst, and to a hydroprocessing catalyst used therein.

Abstract: Disclosed are a molecular sieve catalyst and a preparation method thereof to produce light olefins from cracking naphtha catalytically in severe environments of high temperature and high moisture. In detail, the catalyst is prepared by spray-drying and calcining the mixed slurry, in which 0.01˜5.0 wt % of MnO2 and 1˜15 wt % of P2O5 are simultaneously imbedded in catalyst which consists of zeolite, clay and inorganic complex. According to the present invention, the method that manganese and phosphate are imbedded simultaneously in zeolite and inorganic complex is used to increases thermal-stability of obtained spherical catalyst, and increase olefin yield of cracking hydrocarbon such as naphtha by protecting acid-site of zeolite. To synthesize the required catalyst, the important procedures are mixing ratio and mixing sequence of Mn, P, zeolite, and inorganic complex.