Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

Abstract: Embodiments include Multiple Gate Field-Effect Transistors (MuGFETs) and methods of forming them. In an embodiment, a structure includes a substrate, a fin, masking dielectric layer portions, and a raised epitaxial lightly doped source/drain (LDD) region. The substrate includes the fin. The masking dielectric layer portions are along sidewalls of the fin. An upper portion of the fin protrudes from the masking dielectric layer portions. A first spacer is along a sidewall of a gate structure over a channel region of the fin. A second spacer is along the first spacer. The raised epitaxial LDD region is on the upper portion of the fin, and the raised epitaxial LDD region adjoins a sidewall of the first spacer and is disposed under the second spacer. The raised epitaxial LDD region extends from the upper portion of the fin in at least two laterally opposed directions and a vertical direction.

Abstract: An antenna assembly for microwave ablation can include a radiator for emitting a microwave for ablation; a coaxial cable for transmitting the microwave for ablation generated by a microwave generator to the radiator; an annular composite structure is provided around the coaxial cable for inhibiting an electromagnetic wave from propagating backwards along the coaxial cable. In some embodiment, the annular composite structure comprises an annular nonmetallic layer and an annular metallic layer located outside the annular nonmetallic layer. In some embodiments, the annular metallic layer is electrically insulated from the coaxial cable. In some embodiments, the antenna assembly can be used with a microwave ablation needle. The annular composite structure can inhibit the backward propagation of the microwave along the coaxial cable exterior wall. In some embodiments, circulation water enters the radiation zone, to avoid high temperatures of the head the ablation needle.

Abstract: A semiconductor device includes a substrate, a gate disposed over the substrate, a source/drain disposed in the substrate at two sides of the gate, and an insulating layer disposed over sidewalls of the gate and at least a portion of a surface of the source/drain. In some embodiments, the insulating layer includes a first side facing the gate or the source, and includes a second side opposite to the first side. The insulating layer includes dopants, and a concentration of the dopants is reduced from the second side to the first side of the insulating layer.

Abstract: Disclosed herein are terminal-functionalized polymers functionalized with silicon-containing functionalizing agents, rubber compositions including the polymers, methods for improving the cold flow resistance of a polymer, methods for improving the filler dispersion of a silica-filled rubber composition, and processes for preparing the terminal-functionalized polymer.

Abstract: Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing aryl functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.

Abstract: The technology relates to technology for detecting a predetermined image using a template of the predetermined image. The method includes detecting a color, reducing the color to a range of the color, converting to a grayscale plurality of images, extracting at least one edge of the grayscale images, identifying each component in the images, conducting binarization for the each component, obtaining a threshold value, normalizing the template, and matching the template to the predetermined image.

Abstract: Vulcanizates with desirable properties can be obtained from compositions incorporating polymers that include hydroxyl group-containing aryl functionalities, silica or other particulate filler(s) that contain or include oxides of silicon and a group or compound that can act to covalently bond the filler particles and the polymer. The group can be provided as a substituent of the filler particle, or a discreet compound can be provided in the composition.

Abstract: Elastomeric compounds having increased cold flow resistance may be obtained by utilizing from 10-100 phr of a functionalized rubbery polymer containing specified types of functionalizing units, at least 0.01 phr of a multivalent metal organic salt and 0-90 phr of at least one additional rubbery polymer.

Abstract: Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing aryl functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.

Abstract: Disclosed is a water purifier comprising: a water route integrated device, disposed in the water purifier; a pre-filter cartridge, disposed on a first card interface of a first auxiliary water route plate; a rear filter cartridge, disposed on a second card interface of the first auxiliary water route plate; a reverse osmosis (RO) film filter cartridge, disposed on a third card interface of a main water route plate; a standard piece module, disposed on the main water route plate, and is on a same side of the first auxiliary water route plate; and a pump module, disposed on the main water route plate, and is on a same side of the second auxiliary water route plate.

Abstract: A semiconductor device includes a substrate, an isolation structure over the substrate, and a first semiconductor layer over the substrate. At least a portion of the first semiconductor layer is surrounded by the isolation structure. The semiconductor device further includes a doped material layer between the isolation structure and the first semiconductor layer.

Abstract: Disclosed herein are a terminal-functionalized polymer, rubber compositions containing the polymer, and related processes for preparing the polymer. The functionalizing compound used to prepare the terminal-functionalized polymer has a specified formula which includes a silicon atom and a moiety containing at least two carbon-carbon double bonds in a conjugated configuration.

Abstract: Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing aryl functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.

Abstract: The present disclosure is directed to rubber compositions containing a chemical additive capable of generating or enhancing strain-induced crystallization into the compositions, and tires containing the rubber compositions in one or more components such as sidewalls or treads. The chemical additive is at least one fatty acid amide compound of formula (I). As well, certain embodiments relate to methods for achieving reduced wear or improved durability in a tire tread or tire sidewall by using the chemical additives.

Abstract: A wire processing apparatus comprises a frame, a clamping device mounted on the frame and adapted to clamp a wire to be processed, and a straightening and cutting device mounted on the frame. The straightening and cutting device is adapted to press a conductor of the wire into a straight shape and cut the conductor to a predetermined length after pressing.

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

Abstract: An ethylenically unsaturated polymer includes at a terminus the radical of a compound that is the reaction product of a secondary amine and a vinyl aromatic compound. The secondary amine portion of the compound can be a cyclic compound with N as one of its ring atoms, while the vinyl aromatic compound can include one or more substituents. The polymer can be used as a component of a variety of elastomeric compounds used in the production of vulcanizates.

Abstract: A semiconductor device includes a substrate, an isolation structure over the substrate, and at least one semiconductor layer over the substrate. A first portion of the at least one semiconductor layer is over the isolation structure and a second portion of the at least one semiconductor layer is surrounded by the isolation structure. A doped material layer is between the isolation structure and the second portion of the at least one semiconductor layer.

Abstract: An intelligent water purifying system includes a water purifying module, a heating module, a raw water inlet port, and a pure water outlet port. An inlet end of the water purifying module is connected and in communication with a raw water inlet port, a water outlet end of the water purifying module is connected and in communication with an inlet port of the heating module, and an outlet port of the heating module is connected and in communication with a hot water output pipe. The heating module includes: a heating tank for storing water, and a heating module controller used to control heating of pure water in the heating tank to a preset temperature. The intelligent water purifying system is able to provide water purifying and heating functions at the same time.