Abstract: A CPP thin-film magnetic head includes a bottom shield layer; a top shield layer, the bottom shield layer and the top shield layer being disposed at a predetermined interval; a thin-film magnetic head element between the bottom shield layer and the top shield layer; an insulating layer behind the thin-film magnetic head element in the height direction and disposed between the bottom shield layer and the top shield layer; and a metal layer in the insulating layer, the top shield layer including a first top shield sublayer on the thin-film magnetic head element; and a second top shield sublayer behind the first top shield sublayer in the height direction, the second top shield sublayer and the bottom shield layer being conductively connected through the metal layer, wherein a current flows in the direction orthogonal to a surface of a layer constituting the thin-film magnetic head element.

Abstract: A tunneling magnetic sensing element includes a free magnetic layer disposed on an insulating barrier layer, the free magnetic layer including an enhancement layer, a first soft magnetic layer, a first nonmagnetic metal layer, a second soft magnetic layer, a second nonmagnetic metal layer, and a third soft magnetic layer disposed in that order from the bottom. The enhancement layer is, for example, composed of Co—Fe, each of the soft magnetic layers is, for example, composed of Ni—Fe, and each of the nonmagnetic metal layers is, for example, composed of Ta. Consequently, it is possible to stably obtain a high rate of change in resistance (?R/R) compared with the known art.

Abstract: A first pinned magnetic sublayer 4a has a multilayered structure including a first insertion subsublayer disposed between a lower ferromagnetic subsublayer and an upper ferromagnetic subsublayer. The first insertion subsublayer has an average thickness exceeding 3 ? and 6 ? or less. This results in an interlayer coupling magnetic field Hin lower than a known art while RA and the rate of resistance change (?R/R) substantially identical to those of the known structure are maintained.

Abstract: A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 ?. Accordingly, a high resistance change rate (?R/R) can be obtained.

Abstract: A magnetic sensing element with improved magnetic detection output and a method for making the same are provided. In the magnetic sensing element, the length of an upper pinned magnetic layer an upper antiferromagnetic layer in a track width direction is larger than the length of a free magnetic layer in the track width direction. In making the magnetic sensing element, there is no need to remove side portions of the upper pinned magnetic layer and the upper antiferromagnetic layer. The materials of the upper pinned magnetic layer and the upper antiferromagnetic layer are thus prevented from redepositing on two side faces of the free magnetic layer during milling.

Abstract: A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR includes a nonmagnetic material layer; a pinned magnetic layer; and a free magnetic layer. The pinned layer and the free layer are laminated with the nonmagnetic layer provided therebetween. A current flows perpendicularly to a film plane of the GMR, the pinned magnetic layer extends in the height direction longer than in a track-width direction and includes a first portion in the GMR. The first portion is disposed above or below the nonmagnetic layer and the free layer. A second portion is behind the nonmagnetic layer and the free layer in the height direction. The first and second portions are in the same plane. The width of the pinned layer in the track-width direction in the first portion is greater than that in the second portion.

Abstract: A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

Abstract: A magnetic sensing element with improved magnetic detection output and a method for making the same are provided. In the magnetic sensing element, the length of an upper pinned magnetic layer an upper antiferromagnetic layer in a track width direction is larger than the length of a free magnetic layer in the track width direction. In making the magnetic sensing element, there is no need to remove side portions of the upper pinned magnetic layer and the upper antiferromagnetic layer. The materials of the upper pinned magnetic layer and the upper antiferromagnetic layer are thus prevented from redepositing on two side faces of the free magnetic layer during milling.

Abstract: A magnetic sensing element includes a composite film, a lower shield layer, and a lower electrode layer and an upper electrode layer for supplying a current perpendicular to the composite film. The composite film has an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic layer, and a free magnetic layer. The composite film has a top face and two side faces in a track width direction. Each of the two side faces has a bent position. The angle defined by the side face below the bent position and the top face is larger than the angle defined by the side face above the bent position and the top face. The bent portion preferably lies on the lower electrode layer or the lower shield layer.

Abstract: A lower shield layer and an upper shield layer are formed to have a planar shape, and a detecting element is provided between the lower shield layer and the upper shield layer. End faces of the upper shield layer may extend farther in a depthwise direction from a surface facing a recording medium than end faces of the lower shield layer. A lower conductive electrode may be disposed directly adjacent to a facing inner surface of the lower shield layer. An upper conductive electrode may be disposed adjacent to a portion of the upper shield layer. Therefore, the lower shield layer and the upper conductive electrode may be insulated from each other.

Abstract: A lower shield layer and an upper shield layer are formed to have a planar shape, and a detecting element is provided between the lower shield layer and the upper shield layer. A lower conductive electrode is formed to adhere closely to a facing inner surface corresponding to a top surface of the lower shield layer, and an upper conductive electrode is formed to adhere closely to an outer surface located on the upper shield layer. Therefore, even though a facing interval between the lower shield layer and the upper shield layer is small, an electrical insulating property may be achieved.

Abstract: A lower shield layer has a substantially flat shape, and an upper shield layer has a front portion and a rear portion, where the front portion is disposed closer to the lower shield layer than the rear portion. A lower conductive electrode and an upper conductive electrode are disposed between the lower shield layer and the upper shield layer. The lower conductive electrode is electrically connected to the lower shield layer, and the upper conductive electrode is electrically connected to the upper shield layer. Since the lower and upper conductive electrodes are disposed between the upper and lower shield layers, each of the lower shield layer and the upper shield layer may be formed to have a small area and a simple shape.

Abstract: a CCP-type thin-film magnetic head and a manufacturing method thereof are provided. The CCP-type thin-film magnetic head includes a thin-film magnetic head element formed between the upper shield layer and the lower shield layer, and a side fill gap layer securing the insulating property, which is formed from both end faces of the thin-film magnetic head element, wherein a top surface of the lower shield layer is formed in a non-flat surface having a convex portion disposed at a center in a track width direction and a concave portion disposed at both sides in a track width direction of the convex portion, the thin-film magnetic head element is formed on the convex portion, and an buried gap layer contacting the side fill gap layer is formed in the concave portion.

Abstract: A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed between the pinned and free magnetic layers. A current flows perpendicularly to the film plane of the GMR. The magnetoresistive head further includes an antiferromagnetic layer (an insulating AF of Ni—O or ?-Fe2O3) provided in the rear of the GMR in a height direction to make contact with the upper or lower surface of a rear portion of the pinned magnetic layer which extends in the height direction, and an exchange coupling magnetic field is produced at the interface with the upper or lower surface, so that the magnetization direction of the pinned magnetic layer is pinned by the exchange coupling magnetic field in the height direction.

Abstract: A magnetic sensing element including a laminate and a bias layer is provided. A first reactive-ion-etching (RIE) stop layer is disposed on a free magnetic layer. Second RIE stop layers are disposed on bias layers. The first and second RIE stop layers function as stop layers when layers on the first and second RIE stop layers are removed by reactive ion etching in a production process. Reactive ion etching is completed when the first RIE stop layer and the second RIE stop layers are exposed, the first and second RIE stop layers being disposed at almost the same height. Also provided is a process for producing the magnetic sensing element.

Abstract: There is provided a magnetic detecting element and a method of manufacturing the same. An intermediate layer and a corrosion preventing layer are laminated on a free magnetic layer. The corrosion preventing layer prevents the free magnetic layer from corroding due to reactive ion etching. Therefore, a laminator can be correspondingly formed in a predetermined shape, and the free magnetic layer can be prevented from corroding. As a result, it is possible to manufacture a magnetic detecting element having excellent reproduction output.

Abstract: A magnetic sensing element with improved magnetic detection output and a method for making the same are provided. In the magnetic sensing element, the length of an upper pinned magnetic layer an upper antiferromagnetic layer in a track width direction is larger than the length of a free magnetic layer in the track width direction. In making the magnetic sensing element, there is no need to remove side portions of the upper pinned magnetic layer and the upper antiferromagnetic layer. The materials of the upper pinned magnetic layer and the upper antiferromagnetic layer are thus prevented from redepositing on two side faces of the free magnetic layer during milling.

Abstract: A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR includes a nonmagnetic material layer; a pinned magnetic layer; and a free magnetic layer. The pinned layer and the free layer are laminated with the nonmagnetic layer provided therebetween. A current flows perpendicularly to a film plane of the GMR, the pinned magnetic layer extends in the height direction longer than in a track-width direction and includes a first portion in the GMR. The first portion is disposed above or below the nonmagnetic layer and the free layer. A second portion is behind the nonmagnetic layer and the free layer in the height direction. The first and second portions are in the same plane. The width of the pinned layer in the track-width direction in the first portion is greater than that in the second portion.

Abstract: A CPP thin-film magnetic head includes lower and upper shield layers separated by a predetermined distance and a thin-film magnetic head element disposed therebetween. Current flows in a direction orthogonal to the surface of the thin-film magnetic head element. The CPP thin-film magnetic head further includes an insulating layer positioned at the rear of the thin-film magnetic head element in a height direction and covering the thin-film magnetic head element and the lower shield layer, a first nonmagnetic metal layer provided in a region defined by the insulating layer, and a second nonmagnetic metal layer disposed between the upper shield layer and the first nonmagnetic metal layer, the insulating layer, and the thin-film magnetic head element. The second nonmagnetic metal layer allows current to flow from the upper shield layer to the thin-film magnetic head element through the first nonmagnetic metal layer.

Abstract: A CPP thin-film magnetic head includes a bottom shield layer; a top shield layer, the bottom shield layer and the top shield layer being disposed at a predetermined interval; a thin-film magnetic head element between the bottom shield layer and the top shield layer; an insulating layer behind the thin-film magnetic head element in the height direction and disposed between the bottom shield layer and the top shield layer; and a metal layer in the insulating layer, the top shield layer including a first top shield sublayer on the thin-film magnetic head element; and a second top shield sublayer behind the first top shield sublayer in the height direction, the second top shield sublayer and the bottom shield layer being conductively connected through the metal layer, wherein a current flows in the direction orthogonal to a surface of a layer constituting the thin-film magnetic head element.