Abstract: A method of manufacturing a multilayer wiring structure is disclosed. The method comprises a step of forming a via post on a first metal wiring element, a step of printing an interlayer insulation film on the first metal wiring element, with use of a screen mask having a non-ejection area slightly larger than a head of the via post, such that the interlayer insulation film has an upper surface at the level lower than the head of the via post, while generally aligning the non-ejection area with the head of the via post, a step of curing the interlayer insulation film, and a step of forming a second metal wiring element in contact with the via post on the interlayer insulation film such that the first metal wiring element and the second metal wiring element are connected through the via post.

Abstract: An organic transistor is disclosed that has an organic semiconductor layer patterned with high resolution. The organic transistor includes a gate electrode, a gate insulting film, a source electrode, a drain electrode, and an organic semiconductor layer formed of an organic semiconductor material. The gate electrode, the gate insulting film, the source electrode, the drain electrode, and the organic semiconductor layer are formed on a substrate. At least one of the source electrode and the drain electrode has an opening.

Abstract: An aryl amine polymer is provided which contains a specific repeat unit, its use in preparing an organic semiconductor material which contains the aryl amine polymer and an additional specific compound and in the preparation of organic light emitting devices (OLED), organic thin film transistors (TFT) and so on, along with an organic TFT including a substrate, an organic semiconductor layer which contains the organic semiconductor material and is located overlying the substrate, an electrode pair of a source electrode and a drain electrode; and a third electrode.

Abstract: A method of manufacturing a multilayer wiring structure is disclosed. The method comprises a step of forming a via post on a first metal wiring element, a step of printing an interlayer insulation film on the first metal wiring element, with use of a screen mask having a non-ejection area slightly larger than a head of the via post, such that the interlayer insulation film has an upper surface at the level lower than the head of the via post, while generally aligning the non-ejection area with the head of the via post, a step of curing the interlayer insulation film, and a step of forming a second metal wiring element in contact with the via post on the interlayer insulation film such that the first metal wiring element and the second metal wiring element are connected through the via post.

Abstract: A manufacturing method of a thin film apparatus, includes: a first step for forming a separation layer on a heat resistant substrate; a second step for forming a thin film device on the separation layer; a third step for providing a surface layer on the thin film device; and a fourth step for generating a peeling phenomenon at the interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from a side of the thin film device.

Abstract: An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

Abstract: A wiring pattern is disclosed including: a variable wettability layer including a material whose critical surface tension changes in response to energy provided thereto, the wettability changing layer including a high surface energy part exhibiting a high critical surface tension and a low surface energy part exhibiting low critical surface tension; and a conductive pattern layer formed on the variable wettability layer at the high surface energy part. The conductive pattern layer has an elongated shape with a chamfered corner part in a plan view.

Abstract: A manufacturing method of a thin film apparatus, includes: a first step for forming a separation layer on a heat resistant substrate; a second step for forming a thin film device on the separation layer; a third step for providing a surface layer on the thin film device; and a fourth step for generating a peeling phenomenon at the interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from a side of the thin film device.

Abstract: A manufacturing method of a thin film apparatus, includes: a first step for forming a separation layer on a heat resistant substrate; a second step for forming a thin film device on the separation layer; a third step for providing a surface layer on the thin film device; and a fourth step for generating a peeling phenomenon at the interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from a side of the thin film device.

Abstract: An organic transistor including a stacked insulating film in which an insulating layer and a wettability control layer are stacked in order is provided, wherein the wettability control layer includes a material whose surface energy can be changed by irradiation with an ultraviolet ray and a transmittance of the ultraviolet ray for irradiation therethrough is 10% or greater.

Abstract: An aryl amine polymer is provided which contains a specific repeat unit, its use in preparing an organic semiconductor material which contains the aryl amine polymer and an additional specific compound and in the preparation of organic light emitting devices (OLED), organic thin film transistors (TFT) and so on, along with an organic TFT including a substrate, an organic semiconductor layer which contains the organic semiconductor material and is located overlying the substrate, an electrode pair of a source electrode and a drain electrode; and a third electrode.

Abstract: A method of manufacturing an organic transistor active substrate is disclosed. The organic transistor active substrate includes an organic transistor in which a first electrode is formed on a substrate, a first insulating film is formed on the first electrode, a pair of second electrodes is formed on the first insulating film, and an active layer made of an organic semiconductor material is formed on the pair of second electrodes. The organic transistor is laminated with a second insulating film, and the second insulating film is laminated with a third electrode which is electrically coupled to one of the second electrodes via a through-hole provided through the second insulating film. The first electrode is formed by inkjet ejection; the first insulating film is formed by coating; the pair of second electrodes is formed by inkjet ejection; the active layer is formed by inkjet ejection; the second insulating film is formed by screen printing; and the third electrode is formed by screen printing.

Abstract: An arylamine polymer containing a repeating unit represented by the following chemical structure (I): In the chemical structure, Ar1, Ar3, and Ar4 independently represent a substituted or non-substituted divalent aromatic hydrocarbon group, Ar2 represents a substituted or non-substituted univalent aromatic hydrocarbon group, R1 and R2 independently represent a hydrogen atom, a substituted or non-substituted alkyl group, a substituted or non-substituted alkoxy group or a substituted or non-substituted alkylthio group, x and y independently represent an integer of from 0 to 2, and n represents 0 or 1.

Abstract: An aryl amine polymer is provided which contains a specific repeat unit, its use in preparing an organic semiconductor material which contains the aryl amine polymer and an additional specific compound and in the preparation of organic light emitting devices (OLED), organic thin film transistors (TFT) and so on, along with an organic TFT including a substrate, an organic semiconductor layer which contains the organic semiconductor material and is located overlying the substrate, an electrode pair of a source electrode and a drain electrode; and a third electrode.

Abstract: An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

Abstract: An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

Abstract: A manufacturing method of a thin film apparatus, includes: a first step for forming a separation layer on a heat resistant substrate; a second step for forming a thin film device on the separation layer; a third step for providing a surface layer on the thin film device; and a fourth step for generating a peeling phenomenon at the interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from a side of the thin film device.

Abstract: A manufacturing method of a thin film apparatus, includes: a first step for forming a separation layer on a heat resistant substrate; a second step for forming a thin film device on the separation layer; a third step for providing a surface layer on the thin film device; and a fourth step for generating a peeling phenomenon at the interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from a side of the thin film device.

Abstract: An aryl amine polymer is provided which contains a specific repeat unit, its use in preparing an organic semiconductor material which contains the aryl amine polymer and an additional specific compound and in the preparation of organic light emitting devices (OLED), organic thin film transistors (TFT) and so on, along with an organic TFT including a substrate, an organic semiconductor layer which contains the organic semiconductor material and is located overlying the substrate, an electrode pair of a source electrode and a drain electrode; and a third electrode.

Abstract: Memory mediums storing position data of specific facilities that can be read as position data of a destination on the map data of a vehicle navigation apparatus are distributed to users. When a user sets or inserts this memory medium to a fixed location of the navigation system, the position data of the specific facilities is read and set as the destination. Then the vehicle navigation apparatus starts route guiding to the destination. Arriving at the destination, the user can shop or obtain the benefit of discounts at the facilities (the shop) by using coupons for those shops, also stored on the memory medium.