Abstract: A manufacturing method of a thin film apparatus, includes: a first step for forming a separation layer on a heat resistant substrate; a second step for forming a thin film device on the separation layer; a third step for providing a surface layer on the thin film device; and a fourth step for generating a peeling phenomenon at the interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from a side of the thin film device.

Abstract: An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

Abstract: Memory mediums storing position data of specific facilities that can be read as position data of a destination on the map data of a vehicle navigation apparatus are distributed to users. When a user sets or inserts this memory medium to a fixed location of the navigation system, the position data of the specific facilities is read and set as the destination. Then the vehicle navigation apparatus starts route guiding to the destination. Arriving at the destination, the user can shop or obtain the benefit of discounts at the facilities (the shop) by using coupons for those shops, also stored on the memory medium.

Abstract: An ink jet printing head includes a nozzle plate including nozzles, a plurality of ink cavities each containing ink, a plurality of actuators each made of a phase transition material, an oscillating plate having a top surface with which the ink in each ink cavity is brought into contact, and having a bottom surface bonded to each actuator, the oscillating plate pressing the ink in each ink cavity in association with the actuators to discharge ink drops from the nozzles at a sheet of paper so that an image is printed on the paper.

Abstract: A ferroelectric material has hysteresis characteristics in the polarization-electric field relationship thereof, exhibits an antiferroelectric phase at room temperature, and carries out a structural phase transition from the antiferroelectric state to a ferroelectric phase with the application of an electric field thereto, and a phase transition electric field with which the antiferroelectric-to-ferroelectric phase transition is carried out is shifted to a lower electric field with the elevation of the temperature thereof, and a phase transition electric field with which a ferroelectric-to-antiferroelectric phase transition is carried out has a negative value. A semiconductor non-volatile memory, a rewritable optical recording medium, a highly integrated micro-displacement control device, and a shape memory device, each utilizing the above-mentioned ferroelectric material, are provided.

Abstract: A ferroelectric material has hysteresis characteristics in the polarization--electric field relationship thereof, exhibits an antiferroelectric phase at room temperature, and carries out a structural phase transition from the antiferroelectric state to a ferroelectric phase with the application of an electric field thereto, and a phase transition electric field with which the antiferroelectric-to-ferroelectric phase transition is carried out is shifted to a lower electric field with the elevation of the temperature thereof, and a phase transition electric field with which a ferroelectric-to-antiferroelectric phase transition is carried out has a negative value. A semiconductor non-volatile memory, a rewritable optical recording medium, a highly integrated micro-displacement control device, and a shape memory device, each utilizing the above-mentioned ferroelectric material, are provided.

Abstract: A method of producing a thin film transistor comprises the steps of preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer, forming on the structure an interlayer insulator layer made of a silicon oxide hydrate (SiO.sub.x H.sub.y) having a predetermined composition, forming contact holes in the interlayer insulator layer, forming a wiring layer on the interlayer insulator layer, and carrying out a thermal process thereby diffusing hydrogen atoms within the interlayer insulator layer into at least the active layer and the diffusion layer.