Patents by Inventor Yoshiki Inoue
Yoshiki Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9070814Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.Type: GrantFiled: June 25, 2014Date of Patent: June 30, 2015Assignee: NICHIA CORPORATIONInventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Publication number: 20150115307Abstract: [Technical Problem] A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency. [Solution to Problem] A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections.Type: ApplicationFiled: January 9, 2015Publication date: April 30, 2015Inventors: Naoya SAKO, Takashi Ohara, Yoshiki Inoue, Yuki Shibutani, Yoshihito Kawauchi, Kazuyuki Takeichi, Yasunori Nagahama
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Patent number: 9012936Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.Type: GrantFiled: August 5, 2011Date of Patent: April 21, 2015Assignee: Nichia CorporationInventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Patent number: 8957433Abstract: A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.Type: GrantFiled: March 14, 2013Date of Patent: February 17, 2015Assignee: Nichia CorporationInventors: Naoya Sako, Takashi Ohara, Yoshiki Inoue, Yuki Shibutani, Yoshihito Kawauchi, Kazuyuki Takeichi, Yasunori Nagahama
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Publication number: 20140306265Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.Type: ApplicationFiled: June 25, 2014Publication date: October 16, 2014Inventors: Junya NARITA, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Patent number: 8847262Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.Type: GrantFiled: March 14, 2013Date of Patent: September 30, 2014Assignee: Nichia CorporationInventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Patent number: 8847263Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.Type: GrantFiled: March 14, 2013Date of Patent: September 30, 2014Assignee: Nichia CorporationInventors: Junya Narita, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Patent number: 8698188Abstract: The object of the invention is to improve the visual inspection yield of a semiconductor light emitting device. To achieve the object, a semiconductor light emitting device includes a semiconductor layer, a pad electrode on the layer, and a protection film covering at least the layer. The device includes at least one stopper arranged on a peripheral part of the pad electrode surface away from the film. The stopper has a semicircular arc shape opening toward the center of the pad electrode. In electrical/optical property inspection, if sliding on the pad electrode, a probe needle can be guided into the concave surface of the semicircular arc shape. The stopper can reliably hold the needle. It is avoidable that the needle contacts the film. It is preferable that each of positive/negative electrodes have the pad electrode, and a pair of stoppers be arranged in positions on the electrodes facing each other.Type: GrantFiled: March 5, 2011Date of Patent: April 15, 2014Assignee: Nichia CorporationInventors: Yasutaka Hamaguchi, Yoshiki Inoue, Takahiko Sakamoto
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Publication number: 20140061661Abstract: [Technical Problem] A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency. [Solution to Problem] A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections.Type: ApplicationFiled: March 14, 2013Publication date: March 6, 2014Inventors: Naoya SAKO, Takashi Ohara, Yoshiki Inoue, Yuki Shibutani, Yoshihito Kawauchi, Kazuyuki Takeichi, Yasunori Nagahama
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Publication number: 20130285109Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.Type: ApplicationFiled: March 14, 2013Publication date: October 31, 2013Inventors: Junya NARITA, Takuya OKADA, Yohei WAKAI, Yoshiki INOUE, Naoya SAKO, Katsuyoshi KADAN
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Publication number: 20130270593Abstract: A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.Type: ApplicationFiled: March 14, 2013Publication date: October 17, 2013Inventors: Junya NARITA, Takuya OKADA, Yohei WAKAI, Yoshiki INOUE, Naoya SAKO, Katsuyoshi KADAN
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Patent number: 8546840Abstract: The present invention provides a semiconductor light emitting element having; a semiconductor layer where an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; an n-side electrode connected to the n-type semiconductor layer; and a p-side electrode connected to the p-type semiconductor layer; when the semiconductor light emitting element is viewed from above, the n-side electrode has a n-side pad electrode and n-side extension, the n-side extension comprises an n-side first extension extending from the n-side pad electrode toward the p-side pad electrode and an n-side second extension extending from the n-side first extension and formed T shape with the n-side first extension, the p-side electrode has a p-side pad electrode and a p-side extension formed so as to surround the n-side electrode, the p-side side extension comprises an p-side first extension extending from the p-side pad electrode parallel to the n-side second extension.Type: GrantFiled: January 27, 2012Date of Patent: October 1, 2013Assignee: Nichia CorporationInventors: Yoshiki Inoue, Keiji Emura
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Patent number: 8461617Abstract: Provided is a semiconductor light emitting element wherein generation of an open failure of the light emitting device can be eliminated by ensuring a current pathway when disconnection is generated in a transparent electrode layer. A semiconductor light emitting element (10) is provided with: a first semiconductor layer (12) on a substrate (11); a light emitting layer (13) on the first semiconductor layer (12); a second semiconductor layer (14) on the light emitting layer (13); an insulator layer (15) provided with a hole portion (19) in a partial region on the second semiconductor layer (14); a transparent electrode layer (16) covering the upper surface of the insulator layer (15) and the second semiconductor layer (14) without covering the hole portion (19); and a second pad electrode (18) brought into contact with the second semiconductor layer (14) through the hole portion (19) and faces the insulator layer (15) with the transparent electrode layer (16) therebetween.Type: GrantFiled: August 28, 2009Date of Patent: June 11, 2013Assignee: Nichia CorporationInventors: Katsuyoshi Kadan, Yoshiki Inoue
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Patent number: 8362516Abstract: An excellent light emitting element capable of improving problems caused by a material having high light-reflectivity and susceptible to electromigration, especially Al used for the electrode. FIG. 2A depicts semiconductor light emitting element having a first and second electrodes 20 and 30 disposed at a same surface side respectively on a first and second conductive type semiconductor layer 11 and 13. In the electrode disposing surface, the first electrode 20 comprises a first base part 23 and a first extended part 24 extending from the first base part, and a plurality of separated external connecting parts 31 of the second electrode 30 arranged side by side in extending direction of the first extended part.Type: GrantFiled: March 27, 2012Date of Patent: January 29, 2013Assignee: Nichia CorporationInventors: Yoshiki Inoue, Masahiko Sano
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Publication number: 20120199868Abstract: The present invention provides a semiconductor light emitting element having; a semiconductor layer where an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; an n-side electrode connected to the n-type semiconductor layer; and a p-side electrode connected to the p-type semiconductor layer; when the semiconductor light emitting element is viewed from above, the n-side electrode has a n-side pad electrode and n-side extension, the n-side extension comprises an n-side first extension extending from the n-side pad electrode toward the p-side pad electrode and an n-side second extension extending from the n-side first extension and formed T shape with the n-side first extension, the p-side electrode has a p-side pad electrode and a p-side extension formed so as to surround the n-side electrode, the p-side side extension comprises an p-side first extension extending from the p-side pad electrode parallel to the n-side second extension.Type: ApplicationFiled: January 27, 2012Publication date: August 9, 2012Applicant: NICHIA CORPORATIONInventors: Yoshiki INOUE, Keiji EMURA
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Publication number: 20120181572Abstract: An excellent light emitting element capable of improving problems caused by a material having high light-reflectivity and susceptible to electromigration, especially Al used for the electrode. FIG. 2A depicts semiconductor light emitting element having a first and second electrodes 20 and 30 disposed at a same surface side respectively on a first and second conductive type semiconductor layer 11 and 13. In the electrode disposing surface, the first electrode 20 comprises a first base part 23 and a first extended part 24 extending from the first base part, and a plurality of separated external connecting parts 31 of the second electrode 30 arranged side by side in extending direction of the first extended part.Type: ApplicationFiled: March 27, 2012Publication date: July 19, 2012Inventors: Yoshiki INOUE, Masahiko SANO
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Patent number: 8168996Abstract: An excellent light emitting element capable of improving problems caused by a material having high light-reflectivity and susceptible to electromigration, especially Al used for the electrode. FIG. 2A depicts semiconductor light emitting element having a first and second electrodes 20 and 30 disposed at a same surface side respectively on a first and second conductive type semiconductor layer 11 and 13. In the electrode disposing surface, the first electrode 20 comprises a first base part 23 and a first extended part 24 extending from the first base part, and a plurality of separated external connecting parts 31 of the second electrode 30 arranged side by side in extending direction of the first extended part.Type: GrantFiled: April 16, 2007Date of Patent: May 1, 2012Assignee: Nichia CorporationInventors: Yoshiki Inoue, Masahiko Sano
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Publication number: 20120074431Abstract: The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.Type: ApplicationFiled: August 5, 2011Publication date: March 29, 2012Inventors: Junya NARITA, Takuya Okada, Yohei Wakai, Yoshiki Inoue, Naoya Sako, Katsuyoshi Kadan
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Publication number: 20120032225Abstract: The object of the invention is to improve the visual inspection yield of a semiconductor light emitting device. To achieve the object, a semiconductor light emitting device includes a semiconductor layer, a pad electrode on the layer, and a protection film covering at least the layer. The device includes at least one stopper arranged on a peripheral part of the pad electrode surface away from the film. The stopper has a semicircular arc shape opening toward the center of the pad electrode. In electrical/optical property inspection, if sliding on the pad electrode, a probe needle can be guided into the concave surface of the semicircular arc shape. The stopper can reliably hold the needle. It is avoidable that the needle contacts the film. It is preferable that each of positive/negative electrodes have the pad electrode, and a pair of stoppers be arranged in positions on the electrodes facing each other.Type: ApplicationFiled: March 5, 2011Publication date: February 9, 2012Inventors: Yasutaka Hamaguchi, Yoshiki Inoue, Takahiko Sakamoto
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Patent number: D674356Type: GrantFiled: July 21, 2011Date of Patent: January 15, 2013Assignee: Nichia CorporationInventors: Yoshiki Inoue, Keiji Emura