Abstract: A semiconductor device with a high-voltage transistor and a low-voltage transistor includes an isolation insulating film between a first element region of the high-voltage transistor and a second element region of the low-voltage transistor, a first gate insulating film on a semiconductor substrate in the first element region, a first gate electrode on the first gate insulating film, a second gate insulating film on the semiconductor substrate in the second element region, and a second gate electrode on the second gate insulating film. The isolation insulating film includes a first isolation region adjacent to a surrounding area of the first element region and a second isolation region adjacent to a surrounding area of the second element region. A bottom of the second isolation region is lower than a bottom of the first isolation region. The first gate insulating film is thicker than the second gate insulating film.

Abstract: A first select transistor is connected to one end of a plurality of memory cell transistors that are serially connected. A second select transistor is connected to the other end of the serially connected memory cell transistors. A first impurity diffusion region is formed in a semiconductor substrate and constitutes a first main electrode of the first select transistor. A second impurity diffusion region is formed in the semiconductor substrate and constitutes a second main electrode of the second select transistor. A depth of the first impurity diffusion region is greater than a depth of the second impurity diffusion region.

Abstract: A semiconductor device according to an example of the present invention includes a first semiconductor region of a first conductivity type, a first MIS transistor of a second conductivity type formed in the first semiconductor region, a second semiconductor region of a second conductivity type, and a second MIS transistor of a first conductivity type formed in the second semiconductor region. A first gate insulating layer of the first MIS transistor is thicker than a second gate insulating layer of the second MIS transistor, and a profile of impurities of the first conductivity type in a channel region of the second MIS transistor has peaks.

Abstract: A semiconductor device according to an example of the present invention includes a first semiconductor region of a first conductivity type, a first MIS transistor of a second conductivity type formed in the first semiconductor region, a second semiconductor region of a second conductivity type, and a second MIS transistor of a first conductivity type formed in the second semiconductor region. A first gate insulating layer of the first MIS transistor is thicker than a second gate insulating layer of the second MIS transistor, and a profile of impurities of the first conductivity type in a channel region of the second MIS transistor has peaks.

Abstract: A semiconductor memory device includes a first active region, a second active region, a first element isolating region and a second element isolating region. The first active region is formed in a semiconductor substrate. The second active region is formed in the semiconductor substrate. The first element isolating region electrically separates the first active regions adjacent to each other. The second element isolating region electrically separates the second active regions adjacent to each other. An impurity concentration in a part of the second active region in contact with a side face of the second element isolating region is higher than that in the central part of the second active region, and a impurity concentration in a part of the first active region in contact with a side face of the first element isolating region is equal to that in the first active region.

Abstract: A semiconductor memory includes a memory cell array area having a memory cell, a word line contact area adjacent to the memory cell array area, a word line arranged straddling the memory cell array area and the word line contact area, a contact hole provided on the word line in the word line contact area, and a word line driver connected to the word line via the contact hole. A size of the contact hole is larger than a width of the word line, and the lowest parts of the contact hole exist on a position lower than a top surface of the word line and higher than a bottom surface of the word line.

Abstract: A nonvolatile semiconductor memory concerning an example of the present invention comprises a cell array, a plurality of conducting wires extending from the cell array to a lead area, and a plurality of contact holes to arranged in the lead area so that a distance from the end of the cell array sequentially increases from one to the other of the plurality of conducting wires, each of the plurality of conducting wires having a first conducting wire portion having a first conducting wire width, a second conducting wire portion connected to the contact hole and having a second conducting wire width smaller than the first conducting wire width, and a third conducting wire portion electrically connecting the first conducting wire portion to the second conducting wire portion.

Abstract: A semiconductor device according to an example of the present invention includes a first semiconductor region of a first conductivity type, a first MIS transistor of a second conductivity type formed in the first semiconductor region, a second semiconductor region of a second conductivity type, and a second MIS transistor of a first conductivity type formed in the second semiconductor region. A first gate insulating layer of the first MIS transistor is thicker than a second gate insulating layer of the second MIS transistor, and a profile of impurities of the first conductivity type in a channel region of the second MIS transistor has peaks.

Abstract: A semiconductor integrated circuit according to the present invention includes a cell array composed of elements, conductive lines with a pattern of a line & space arranged on the cell array, connecting lines formed upper than the conductive lines, and contact holes which connect the conductive lines to the connecting lines. One end side of the conductive lines sequentially departs from an end of the cell array when heading from one of the conductive lines to another one, the contact holes are arranged at one end side of the conductive lines, and size of the contact holes is larger than width of the conductive lines.

Abstract: A sheet-shaped molded laminate includes a laminated skin member including a decorative face, and a resin base material integrally injection molded on a face of the laminated skin member placed on an opposite side to the decorative face of the laminated skin member. The laminated skin member includes a foamed layer with a density equal to or greater than 0.04 g/cm3, a sheet-shaped decorative skin member bonded to one face of the foamed layer, and a sheet-shaped backing layer bonded to the other face of the foamed layer. Before the laminated skin member and the resin base material are integrally molded, an elastic modulus of the laminated skin member in a warping deformation preventive direction is equal to or smaller than 196N/25 mm (width of a test piece of the laminated skin member: 25 mm) with the laminated skin member being stretched by 33%.

Abstract: A reagent for the detection of an antibody against an acid-fast bacterial antigen comprising at least one compound selected from the group comprising mycolic acids, mycolic acid salts, mycolic acid esters and esters of fatty acids having a carbon number of 14 or more other than mycolic acid with a mono- or disaccharide, a method of detecting an antibody against an acid-fast bacterial antigen using said reagent and a method of diagnosis of acid-fast bacterial infections by said detection method are simpler in procedures and offer much higher specificity in comparison with conventional reagents and methods, enabling identification of acid-fast bacterial genera (including the genera Mycobacterium, Nocardia and Rhodococcus) and acid-fast bacterial species, and thus it is possible to make diagnoses to identify the infecting acid-fast bacterium, which leads to the quick choice of therapeutic drug for the disease.

Abstract: A trehalose derivative of the formula: ##STR1## wherein one, two, three or four of R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7 and R.sup.8 are independently selected from the group consisting of C.sub.1-40 aliphatic acyl groups and all the rest of them are hydrogen atoms,with the proviso that:a) when one of them is C.sub.1-40 aliphatic acyl group, then it is not 2-palmitoyl or 6-aliphatic acyl,b) when two of them are C.sub.1-40 aliphatic acyl groups, then they are not located at corresponding positions with each other,c) when three of them are C.sub.1-40 aliphatic acyl groups, then they are not 2,3,2'-tripalmitoyl, andd) when four of them are C.sub.1-40 aliphatic acyl groups, then they are not located at corresponding positions with each other or at 2,3,4,2'- or 2,3,6,2'-positions.The compounds of the above formula have anti-tumor activity.

Abstract: An .alpha.,.alpha.-trehalose trimycolate represented by formula: ##STR1## (wherein R.sup.1 through R.sup.8 each represents a hydrogen atom or mycolic acid residue, and three of R.sup.1 through R.sup.8 are mycolic acid residues; these mycolic acid residues may, or may not be identical with each other).Since the said .alpha.,.alpha.-trehalose trimycolate possesses both immunopotentiating activity and antitumor activity on animals and is low in toxicity, it is expected to be applied to a protective drug against infection of various microbes, an antitumor agent and immunopotentiation at the time of decline in physical strength.

Abstract: Compounds of the general formula: ##STR1## wherein R.sup.1 is heterocyclic group other than pyridyl and which is unsubstituted or substituted with lower alkyl or lower alkoxycarbonyl, R.sup.2 is hydrogen, halogen, or nitro, and R.sup.3 is carboxy group or its functional derivative, with the proviso that when R.sup.1 is an unsubstituted furyl, or furyl mono- or polysubstituted with alkyl and R.sup.2 is hydrogen, then R.sup.3 is functional derivative of carboxy and, where applicable, pharmaceutically acceptable salts thereof are hyaluronidase inhibitors and useful as anti-allergic agent.

Abstract: A compound of the formula: ##STR1## wherein the free valency of the groups A-, R- and --X--Y-- is attached to any of 2-, 4- and 5- positions of the thiazol ring, A is a C.sub.1-6 alkyl group, an aryl group which is unsubstituted or substituted with at least one substituent selected from the group consisting of hydroxy C.sub.1-6 alkoxy, aryl-(C.sub.1-6)alkoxy, halo-(C.sub.1-6)alkyl, halogen, and nitro,or 5- or 6-membered heterocyclic group containing at least one hetero atom selected from oxygen, nitrogen and sulfur, or a condensed heterocyclic group consisting of a heterocycle as defined above and a benzene nucleus, these two heterocyclic groups being unsubstituted or substituted with at least one substituent selected from halogen,R is hydrogen or a C.sub.

Abstract: The present invention provides a novel amphipathic substance having tumor necrosis factor (TNF) inducing activity. This substance is an amphipathic substance obtained by extraction from several kinds of acid-fast bacteria, and has excellent TNF inducing activity. The toxicity of the substance is much lower than that of the conventional amphipathic substances having TNF inducing activity.

Abstract: Compounds of the formula: ##STR1## wherein A is a C.sub.1-6 alkyl group, an aryl group which is unsubstituted or substituted with at least one substituent selected from hydroxy, alkoxy, aryl-(C.sub.1-6)alkoxy, C.sub.1-6 alkylcarbonyloxy, halo-(C.sub.1-6)alkyl, halogen, nitro and amino,or 5- or 6-membered heterocyclic group containing at least one hetero atom selected from oxygen, nitrogen and sulfur, or a condensed heterocyclic group consisting of a heterocycle as defined above and a benzene nucleus,these two heterocyclic groups being unsubstituted or substituted with at least one substituent selected from hydroxy, C.sub.1-6 alkyl and halogen, and R is hydrogen or a C.sub.1-6 alkyl group,or a pharmaceutically acceptable salt thereof are nobel and useful as antiallergic.

Abstract: This invention relates to pharmaceutical compositions of compounds of the general formula: ##STR1## wherein R.sup.1 is an aryl group or a substituted aryl group wherein the substituent is halogen, hydroxy, C.sub.(1-6) lower alkoxy, C.sub.(1-6) lower alkylenedioxy, halo C.sub.(1-6) lower alkyl, cyano, nitro, mono- or di-C.sub.(1-6) alkylamino or C.sub.(1-6) lower alkanoylamino; or a 5-membered or 6-membered C.sub.(1-6) alkyl substituted or unsubstituted heterocyclic group containing a heteroatom selected from oxygen, nitrogen, and sulfur, or a condensed heterocyclic group consisting of a heterocycle as defined above and a benzene nucleus, and R.sup.2 and R.sup.2' are, independently, hydrogen, halogen, nitro, C.sub.(1-6) lower alkyl or C.sub.(1-6) lower alkoxy. These compounds have been found to exhibit hyaluronidase inhibiting activity, anti-allergic activity and anti-ulcerous activity.

Abstract: Compounds of the general formula: ##STR1## wherein A and B are both hydrogen, or one of A and B is a group (G) of the formula: ##STR2## and the other is a group R.sup.5 wherein R.sup.1 is an aryl group or a heterocyclic group, both of them being optionally substituted, and R.sup.4 and R.sup.5 are both hydrogen or together form a single chemical bond,R.sup.2 and R.sup.2 ' are independently hydrogen, halogen, nitro, lower alkyl or lower alkoxy, andR.sup.3 and R.sup.3 ' are independently carboxy or its functional derivative, with the proviso that (a) when A and B are both hydrogen, then R.sup.2 and R.sup.2 ' cannot be both hydrogen,and, where applicable, pharmaceuticably acceptable salts thereof are hyaluronidase inhibitors, and useful as anti-allergic agent and anti-ulcerous agent. Among the compound (I'), those wherein when one of A and B is the group (G) and the other is the group R.sup.5 wherein R.sup.4 and R.sup.5 together form a single chemical bond, R.sup.1 is unsubstituted aryl and R.sup.2 and R.sup.

Abstract: Compounds of the general formula: ##STR1## wherein A and B are both hydrogen, or one of A and B is a group (G) of the formula: ##STR2## and the other is a group R.sup.5 wherein R.sup.1 is an aryl group or a heterocyclic group, both of them being optionally substituted, and R.sup.4 and R.sup.5 are both hydrogen or together form a single chemical bond,R.sup.2 and R.sup.2 ' are independently hydrogen, halogen, nitro, lower alkyl or lower alkoxy, andR.sup.3 and R.sup.3 ' are independently carboxy or its functional derivative, with the proviso that (a) when A and B are both hydrogen, then R.sup.2 and R.sup.2 ' cannot be both hydrogen,and, where applicable, pharmaceuticably acceptable salts thereof are hyaluronidase inhibitors, and useful as anti-allergic agent and anti-ulcerous agent. Among the compound (I'), those wherein when one of A and B is the group (G) and the other is the group R.sup.5 wherein R.sup.4 and R.sup.5 together form a single chemical bond, R.sup.1 is unsubstituted aryl and R.sup.2 and R.sup.