Abstract: A display device includes liquid crystal capacitor element interposed between a pixel electrode and a counter electrode. The pixel electrode, one terminals of a first switch circuit and a second switch circuit, and a first terminal of a second transistor form an internal node. The other terminals of the first switch circuit is connected to the source line. The other terminal of the second switch circuit is connected to the voltage supply line and is configured by a series circuit of transistors. A control terminal of the transistor, a second terminal of the transistor, and one terminal of a boost capacitor element form an output node. The other terminal of the boost capacitor element, the control terminal of the transistor, and the control terminal of the transistor are connected to a boost line, a reference line, and a selecting line, respectively.

Abstract: A display device which achieves low power consumption without causing an aperture ratio to be lowered is provided. A pixel circuit includes: an internal node which holds a voltage of the pixel data supplied to a display element part; a first switch circuit which transfers the voltage of the pixel data supplied from a data signal line to the internal node through at least a switch element; a second switch circuit which transfers a voltage supplied to a predetermined voltage supply line to the internal node without going through the switch element; and a control circuit which holds a predetermined voltage depending on the voltage of the pixel data held in the internal node, at one end of a first capacitance element and controls connection/disconnection of the second switch circuit.

Abstract: A display device includes liquid crystal capacitor element formed between a pixel electrode and a counter electrode. One terminals of the pixel electrode, a first switch circuit, and a second switch circuit, and a first terminal of a second transistor form an internal node. The first switch circuit and the second switch circuit have other terminals connected to a source line. The second switch circuit is configured by a series circuit of transistors, and a control terminal of the transistor, a second terminal of the transistor, and one terminal of a boost capacitor element form an output node. The other terminal of the boost capacitor element is connected to a boost line, the control terminal of the transistor is connected to a reference line, and the control terminal of the transistor is connected to a selecting line.

Abstract: A liquid crystal display device is provided which is capable of sufficiently decreasing power consumption in permanent display of still images while keeping high quality display in transparent mode, in high resolution display panels. In each pixel circuit, a pixel electrode is connected to a source line via a third transistor. When a refreshing circuit performs a refreshing operation, a boosting signal line is supplied with a voltage pulse. If the pixel electrode is at a high voltage level at this time point, a voltage at a node is boosted and a first transistor turns ON to supply a reference voltage to the pixel electrode as a refreshing voltage. If the pixel electrode is at a low voltage level, there is no boost, and the first transistor stays in OFF state, so a node assumes a voltage which is given by an off-resistance ratio of the first and the third transistors, and this voltage is supplied to the pixel electrode.

Abstract: An embodiment of the present invention provides a liquid crystal display device. In each pixel circuit, a pixel electrode is connected to a source line via a third transistor. When a refreshing circuit performs a refreshing operation, a boosting signal line is supplied with a voltage pulse. If the pixel electrode is at a high voltage level at this time point, a voltage at a node is boosted and a first transistor turns ON to supply a refreshing voltage to the pixel electrode. If the pixel electrode is at a low voltage level, there is no boost, and the first transistor stays in OFF state, so a node assumes a voltage which is given by an off-resistance ratio of the first and the third transistors, and this voltage is supplied to the pixel electrode.

Abstract: Provided is a nonvolatile memory 10 having a selective gate SG formed below a silicon layer 14, which is to be a channel region formed between a source region S and a drain region D of a transistor, through a gate insulating film 15 between the silicon layer and the selective gate, a floating gate FG formed on a part over the silicon layer 14 through a gate insulating film 16, and a control gate CG connected to the floating gate FG. The selective gate SG has one end overlapping the source region S through the gate insulating film 15, and the floating gate FG has one end overlapping the drain region D through the gate insulating film 16, and the other end separated from the source region S and overlapping the silicon layer 14 through the gate insulating film 16. Thus, a nonvolatile memory whose performance is not deteriorated even when it is formed on an insulating substrate having a low heat dissipating characteristic can be achieved.

Abstract: A nonvolatile semiconductor memory device having a source-side-injected split-gate type of nonvolatile memory cell which can be formed by a one-layer polysilicon CMOS process is provided. A memory cell includes a first memory cell unit including first and second diffusion regions formed on a semiconductor substrate surface, and first and second gate electrodes separately formed through a gate insulation film on a first channel region between the first and second diffusion regions, a second memory cell unit including third and fourth diffusion regions formed on the semiconductor substrate surface, and a third gate electrode formed through a gate insulation film on a second channel region between the third and fourth diffusion regions, and a control terminal. The first to third gate electrodes are formed of the same electrode material layer. The second and third gate electrodes are electrically connected to form a floating gate capacitively coupled to the control terminal.

Abstract: A nonvolatile semiconductor memory device capable of improving injection efficiency and simplifying manufacturing process is provided. The device comprises a memory cell having second conductive type of first impurity diffusion area and second impurity diffusion area on a first conductive type of semiconductor substrate, between the first and second impurity diffusion areas, a first laminate section formed by laminating a first insulating film, a charge storage layer, a second insulating film and a first gate electrode in this order from the bottom, and a second laminate section formed by laminating a third insulating film and a second gate electrode in this order from the bottom, wherein an area sandwiched between the first and second laminate sections is the second conductive type of a third impurity diffusion area having impurity density lower than that of the first and second impurity diffusion areas and not higher than 5×1012 ions/cm2.

Abstract: A virtual ground type semiconductor memory device comprises: a memory cell array in which nonvolatile memory cells each including a first electrode, a pair of second electrodes, and a charge retention part are arranged in row and column directions like a matrix; a read circuit for selecting a pair of the first and second bit lines connected to a selected memory cell to be read, applying first and second read voltages to the selected first and second bit lines, respectively, and detecting a magnitude of a memory cell current flowing in the selected memory cell, at the time of reading; a voltage applying means for applying the second read voltage to a second adjacent bit line adjacent to the selected second bit line on the opposite side of the first bit line; and a short-circuit means for short-circuiting the selected second bit line and the second adjacent bit line.

Abstract: A nonvolatile memory cell that can be mounted in a CMOS manufacturing process, and is capable of implementing high level of programming, reading and erasing ability. The memory cell is configured by a MOS transistor including two N-type first impurity diffusion layers formed separately on a P-type semiconductor substrate, and a first gate electrode formed above a first cannel region sandwiched by both diffusion layers through a first gate insulation film, a first capacitor comprising P-type second impurity diffusion layers formed on a well, and a second gate electrode formed above the diffusion layer through a second gate insulation film, and a second capacitor comprising the well adjacent to the second impurity diffusion layer, and a third gate electrode formed above the well through a third gate insulation film, wherein a different voltage can be applied to each of the capacitors.

Abstract: A virtual ground type semiconductor memory device comprises: a memory cell array in which nonvolatile memory cells each including a first electrode, a pair of second electrodes, and a charge retention part are arranged in row and column directions like a matrix; a read circuit for selecting a pair of the first and second bit lines connected to a selected memory cell to be read, applying first and second read voltages to the selected first and second bit lines, respectively, and detecting a magnitude of a memory cell current flowing in the selected memory cell, at the time of reading; a voltage applying means for applying the second read voltage to a second adjacent bit line adjacent to the selected second bit line on the opposite side of the first bit line; and a short-circuit means for short-circuiting the selected second bit line and the second adjacent bit line.

Abstract: A nonvolatile memory cell that can be mounted in a CMOS manufacturing process, and is capable of implementing high level of programming, reading and erasing ability. The memory cell is configured by a MOS transistor comprising two N-type first impurity diffusion layers formed separately on a P-type semiconductor substrate, and a first gate electrode formed above a first cannel region sandwiched by both diffusion layers through a first gate insulation film, a first capacitor comprising P-type second impurity diffusion layers formed on a well, and a second gate electrode formed above the diffusion layer through a second gate insulation film, and a second capacitor comprising the well adjacent to the second impurity diffusion layer, and a third gate electrode formed above the well through a third gate insulation film, wherein a different voltage can be applied to each of the capacitors.

Abstract: A nonvolatile semiconductor memory device capable of improving injection efficiency and simplifying manufacturing process is provided. The device comprises a memory cell having second conductive type of first impurity diffusion area and second impurity diffusion area on a first conductive type of semiconductor substrate, between the first and second impurity diffusion areas, a first laminate section formed by laminating a first insulating film, a charge storage layer, a second insulating film and a first gate electrode in this order from the bottom, and a second laminate section formed by laminating a third insulating film and a second gate electrode in this order from the bottom, wherein an area sandwiched between the first and second laminate sections is the second conductive type of a third impurity diffusion area having impurity density lower than that of the first and second impurity diffusion areas and not higher than 5×1012 ions/cm2.

Abstract: A nonvolatile semiconductor memory having a memory cell comprises: a semiconductor substrate having a pair of trenches formed on a surface thereof; first electrodes formed in a pair of trenches through the intervention of a first insulating film, respectively; a second electrode formed on the semiconductor substrate between the trenches through the intervention of a second insulating film; and a third electrode formed on the second electrode through the intervention of a third insulating film.

Abstract: A semiconductor memory device comprises: a plurality of memory elements; at least one bit line, wherein a memory operation is performed via at least a portion of the bit line with respect to at least one of the plurality of memory elements; and a load resistance regulating circuit for changing a resistance value to reduce or eliminate a difference in bit line load resistance depending on a position of the memory element.

Abstract: A semiconductor memory device of the invention comprises a plurality of bit lines formed by implanting a second conductive-type impurity in a first conductive-type semiconductor substrate; a thick insulating film on the bit lines; a thin insulating film between the neighboring bit lines; and a plurality of word lines formed on the thick and thin insulating films so as to cross the bit lines, wherein each of the word lines includes a plurality of first conductors and a second conductor which electrically connects the first conductors in series, the respective first conductors are formed on the thin insulating film, the top face of the thickest portion of the thick insulating film is higher than the top face of the first conductors, and the film thickness of the thick insulating film is made thinner toward the end.

Abstract: A semiconductor memory device having a virtual ground line type memory array structure includes a readout circuit for selecting a pair of selected bit lines connected to the source and the drain of a memory cell to be read, applying a predetermined voltage to between the paired selected bit lines, and sensing a memory cell current flowing through the memory cell to be read, and a counter potential generation circuit for generating from an intermediate node potential, which is higher than any level of the potential on the selected bit lines and supplied from an intermediate node on a current path for feeding the memory cell current in the readout circuit, a counter potential which varies in the same direction as of the intermediate node potential depending on the memory cell current so that its variation is greater than that of the intermediate node potential, wherein the counter potential is applied to an unselected bit line allocated next to one at a high level of the paired selected bit lines.

Abstract: A nonvolatile semiconductor memory device has a cell which includes a drain diffusion region and a source diffusion region formed on a surface layer of a semiconductor substrate; a first insulating film formed between the source diffusion region and the drain diffusion region; a floating gate formed on the first insulating film; a second insulating film formed on the floating gate; a first control gate formed on the second insulating film; a third insulating film formed on the first control gate and a sidewall thereof and on a sidewall of the floating gate; and a second control gate formed on the first control gate with the third insulating film interposed therebetween.

Abstract: A method of writing data into a non-volatile semiconductor memory having a plurality of memory cells in which a word line is shared by memory cells and a bit line is shared by adjacent memory cells, the method including writing the data into memory cells connected to the same word line sequentially from a memory cell at one end to a memory cell at another end.

Abstract: A semiconductor readout circuit reads out a potential of each of plural data lines by comparing the potential with a potential of a common reference data line, using a sense amplifier provided for each of the data lines. This semiconductor readout circuit has a current control circuit provided for each of the data lines. The current control circuit controls the potential of the corresponding one of the data lines so that a potential difference between the potential of the corresponding data line and the potential of the reference data line can be reduced based on an output as to the potential difference detected by the sense amplifier.